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David M Shaddock

from Troy, NY
Age ~66
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Also known as:
David Mulford Shaddock, David H Shaddock, David N Shaddock, Dave M Shaddock, David K
Phone and address:
8 Inverness Dr, Troy, NY 12180
(518) 279-0502
Related to:
Thomas E Fox, 99Helene FoxHeliena Shaddock, 64Heliena Fox, 64
Connected to:
Jonathan E Shaddock, 43Michele K Shaddow, 60Darlene M Shaddox, 82Hugh Shaddox, 78Luciana M Shaddox, 47Rosalie D Shaddox, 53Terry L Shadduck, 45Aaron J Shaddy, 37Roger D Shaddy, 64Alan D Shade, 69

David Shaddock Phones & Addresses

  • 8 Inverness Dr, Troy, NY 12180 (518) 279-0502
  • 10 Inverness Dr, Troy, NY 12180
  • 346 7Th Ave, Troy, NY 12182
  • 1 Queens Dr, Schenectady, NY 12304
  • 5 Queens Dr, Schenectady, NY 12304
  • 6 Queens Dr, Schenectady, NY 12304
  • 6 Queens Dr #73 30, Schenectady, NY 12304
  • 5525 N Stanton St #26B, El Paso, TX 79912
  • Jasper, TX
  • Dallas, TX
  • 8 Inverness Dr, Troy, NY 12180

Resumes

Resumes

David Shaddock Photo 1

Electronics Packaging Engineer

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Location:
Schenectady, NY
Industry:
Research
Work:
Rockwell International Mar 1991 - Jul 1995
Manufacturing\Process Engineering Group Leader
Ge Mar 1991 - Jul 1995
Electronics Packaging Engineer
Rockwell International Oct 1987 - Mar 1991
Engineering Group Leader - Advanced Manufacturing Technology
Rockwell International Oct 1985 - Oct 1987
Technical Staff Member Iii Smt Process Engineering Department
Motorola Mar 1984 - Oct 1985
Manufacturing Engineer I Automation Engineering Department
Education:
Rensselaer Polytechnic Institute 1999 - 2005
Master of Science, Masters, Engineering, Electronics Northwestern University 1983 - 1985
Carnegie Mellon University 1977 - 1982
Bachelor of Science In Mechanical Engineering, Bachelors, Mechanical Engineering
Skills:
Manufacturing
Design For Manufacturing
Process Engineering
Engineering
Automation
Process Simulation
Process Improvement
Robotics
Electronics Packaging
Smt
Reliability
Electronics Manufacturing
Project Planning
Soldering
Management
Simulations
Design of Experiments
R&D
David Shaddock Photo 2

David Shaddock

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Publications

Us Patents

Led Power Package

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US Patent:
6964877, Nov 15, 2005
Filed:
Apr 27, 2004
Appl. No.:
10/832969
Inventors:
Stanton Weaver, Jr. - Northville NY, US
Ivan Eliashevich - Maplewood NJ, US
Sebastien Libon - New York NY, US
Mehmet Arik - Niskayuna NY, US
David Shaddock - Troy NY, US
Assignee:
GELcore, LLC - Valley View OH
International Classification:
H01L021/00
US Classification:
438 20, 438106
Abstract:
Surface mount light emitting diode (LED) packages each contain a light emitting diode (LED) die (). A plurality of arrays of openings are drilled into an electrically insulating sub-mount wafer (). A metal is applied to the drilled openings to produce a plurality of via arrays (). The LED dice () are flip-chip bonded onto a frontside () of the sub-mount wafer (). The p-type and n-type contacts of each flip-chip bonded LED () electrically communicate with a solderable backside () of the sub-mount wafer () through a via array (). A thermal conduction path () is provided for thermally conducting heat from the flip-chip bonded LED dice () to the solderable backside () of the sub-mount wafer (). Subsequent to the flip-chip bonding, the sub-mount wafer () is separated to produce the surface mount LED packages.

Gas Sensor Device

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US Patent:
7053425, May 30, 2006
Filed:
Nov 12, 2003
Appl. No.:
10/706767
Inventors:
Peter Micah Sandvik - Guilderland NY, US
Vinayak Tilak - Watervliet NY, US
Jesse Tucker - Niskayuna NY, US
Stanton Earl Weaver - Northville NY, US
David Mulford Shaddock - Troy NY, US
Jonathan Lloyd Male - Schoharie NY, US
John Patrick Lemmon - Schoharie NY, US
Mark Allen Woodmansee - Schenectady NY, US
Venkatesan Manivannan - Rexford NY, US
Deborah Ann Haitko - Schenectady NY, US
Assignee:
General Electric Company - Niskayuna NY
International Classification:
H01L 31/312
G01N 27/12
US Classification:
257253, 438 46, 73 3106
Abstract:
A gas sensor device including a semiconductor substrate; one or more catalytic gate-electrodes deposited on a surface of the semiconductor substrate; one or more ohmic contacts deposited on the surface of the semiconductor substrate and a passivation layer deposited on at least a portion of the surface; wherein the semiconductor substrate includes a material selected from the group consisting of silicon carbide, diamond, Group III nitrides, alloys of Group III nitrides, zinc oxide, and any combinations thereof.

High-Temperature Pressure Sensor

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US Patent:
7313965, Jan 1, 2008
Filed:
Aug 25, 2006
Appl. No.:
11/509397
Inventors:
Vinayak Tilak - Schenectady NY, US
Jie Jiang - Clifton Park NY, US
David Mulford Shaddock - Troy NY, US
Stacey Joy Kennerly - Niskayuna NY, US
David Richard Esler - Mayfield NY, US
Aaron Jay Knobloch - Rexford NY, US
Assignee:
General Electric Company - Niskayuna NY
International Classification:
G01L 9/00
US Classification:
73705, 73754
Abstract:
A high-temperature pressure sensor that includes a dielectric layer. The pressure sensor also includes a substrate capable of withstanding temperatures greater than 450 C. without entering a phase change, at least one semiconducting material deposited on the sapphire substrate, and a silicon dioxide layer deposited over the semiconducting material. One aspect of the pressure sensor includes a second semiconducting material.

Clearance Measurement System And Method Of Operation

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US Patent:
7333913, Feb 19, 2008
Filed:
Jun 27, 2005
Appl. No.:
11/167434
Inventors:
Emad Andarawis Andarawis - Ballston Lake NY, US
Mahadevan Balasubramaniam - Clifton Park NY, US
Todd Alan Anderson - Niskayuna NY, US
Samhita Dasgupta - Niskayuna NY, US
David Mulford Shaddock - Troy NY, US
Shobhana Mani - Clifton Park NY, US
Jie Jiang - Schenectady NY, US
Assignee:
General Electric Company - Niskayuna NY
International Classification:
G01B 5/14
US Classification:
702158
Abstract:
A clearance measurement system is provided. The clearance measurement system includes a reference geometry disposed on a first object having an otherwise continuous surface geometry and a sensor disposed on a second object, wherein the sensor is configured to generate a first signal representative of a first sensed parameter from the first object and a second signal representative of a second sensed parameter from the reference geometry. The clearance measurement system also includes a processing unit configured to process the first and second signals to estimate a clearance between the first and second objects based upon a measurement difference between the first and second sensed parameters.

High-Temperature Pressure Sensor And Method Of Assembly

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US Patent:
7559701, Jul 14, 2009
Filed:
Mar 19, 2007
Appl. No.:
11/687931
Inventors:
Aaron Jay Knobloch - Mechanicville NY, US
David Mulford Shaddock - Troy NY, US
David Richard Esler - Mayfield NY, US
Marco Francesco Aimi - Niskayuna NY, US
Douglas S. Byrd - Greer SC, US
David Robert O'Connor - Mississauga, CA
Stacey Joy Kennerly - Albany NY, US
Assignee:
General Electric Company - Schenectady NY
International Classification:
G02B 6/36
G01B 9/02
US Classification:
385 88, 356454
Abstract:
A method for assembling a Fabry-Perot interferometer includes depositing a first metal layer on an end portion of a ferrule, depositing a second metal layer on a back portion of a die, placing the first metal layer and the second metal layer in contact with each other with respective first and second orifices aligned with respect to each other, and bonding the ferrule to the die by thermo compression. The resulting interferometer includes a glass die with a cavity, a silicon diaphragm disposed over the opening of the cavity and bonded to the glass die, a ferrule bonded to the glass die by thermo compression with the first and second orifices being aligned to each other, and an optical fiber inserted through the other end of the ferrule in direct contact to a back portion of the die and aligned with the first orifice.

System And Method For Operating An Exhaust Gas Sensor System

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US Patent:
7739898, Jun 22, 2010
Filed:
Jun 24, 2005
Appl. No.:
11/166422
Inventors:
David Mulford Shaddock - Troy NY, US
Ganapathisubbu Sethuvenkatraman - Sholavandan, IN
Kunal Ravindra Goray - Bangalore, IN
Assignee:
General Electric Company - Niskayuna NY
International Classification:
G01N 27/26
US Classification:
73 3105, 73 2331
Abstract:
An exhaust gas sensor system includes an inner chamber disposed around a sensor element. The inner chamber has either a cylindrical shape or a frusto-conical shape. The system further includes an outer chamber disposed substantially around the inner chamber to redirect a flow of an exhaust gas stream having an original direction by allowing the exhaust gas stream to strike a surface of the inner chamber to change the original direction of the flow to a substantially perpendicular direction relative to the original direction, then to substantially reverse the substantially perpendicular direction of the flow to create a substantially reversed flow within the inner chamber. Alternately the exhaust sensor system includes a sintered metal filter that prevents exhaust gas particles from fouling a sensor element. The system further includes an electric source coupled to the sintered metal filter to heat the sintered metal filter to a temperature sufficient to remove the exhaust gas particles from the sintered metal filter.

High Temperature Optical Pressure Sensor And Method Of Fabrication Of The Same

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US Patent:
7966887, Jun 28, 2011
Filed:
Mar 26, 2009
Appl. No.:
12/411878
Inventors:
Aaron Jay Knobloch - Mechanicville NY, US
David William Vernooy - Niskayuna NY, US
Weizhuo Li - Berkeley Heights NJ, US
David Mulford Shaddock - Troy NY, US
Stacey Joy Kennerly - Albany NY, US
Assignee:
General Electric Company - Niskayuna NY
International Classification:
G01L 9/00
US Classification:
73705, 73715
Abstract:
A high-temperature pressure sensor is provided. The sensor includes a quartz substrate with a cavity etched on one side. A reflective coating is deposited on at least a portion of the cavity. The sensor further includes a ferrule section coupled to the quartz substrate with the cavity therebetween. The cavity exists in a vacuum, and cavity gap is formed between the reflective metal coating and a surface of the ferrule. The sensor also includes an optical fiber enclosed by the ferrule section and extending from the cavity gap to an opposing end of the ferrule section and a metal casing surrounding the ferrule section and the quartz substrate with an opening for said optical fiber extending therefrom. The pressure applied to the quartz substrate changes the dimensions of the cavity gap and a reflected signal from the reflective coating is processed as a pressure.

System And Method For Clearance Estimation Between Two Objects

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US Patent:
8121813, Feb 21, 2012
Filed:
Jan 28, 2009
Appl. No.:
12/361469
Inventors:
Zhiyuan Ren - Malta NY, US
Wayne Charles Hasz - Pownal VT, US
Emad Andarawis Andarawis - Ballston Lake NY, US
David So Keung Chan - Niskayuna NY, US
David Mulford Shaddock - Troy NY, US
John Harry Down - Lanesborough MA, US
Samhita Dasgupta - Niskayuna NY, US
William Lee Herron - Cincinnati OH, US
David Walter Parry - Cincinnati OH, US
David Richard Esler - Gloversville NY, US
Mahadevan Balasubramaniam - Ballston Lake NY, US
Assignee:
General Electric Company - Niskayuna NY
International Classification:
G06F 11/00
US Classification:
702155
Abstract:
A processing system for clearance estimation in a rotating machine includes one or more sensors and one or more digital signal processors for calculating the estimated clearance. The processing system may include techniques for obtaining real-time clearance estimates and techniques for obtaining averaged clearance estimates. Aspects of the processing system may also include a method of switching between real-time clearance estimates and averaged clearance estimates depending on the operating conditions of the rotating machine. Other aspects of the processing system include the use of two digital signal processors: a first digital signal processor configured to receive signals from a clearance sensor and perform a first set of high speed processing tasks, and a second digital signal processor configured to receive signals from the first digital signal processor and perform a second set of lower speed processing tasks.

Isbn (Books And Publications)

Contexts and Connections: An Intersubjective Systems Approach to Couples Therapy

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Author

David Shaddock

ISBN #

0465095704

From Impasse to Intimacy: How Understanding Unconscious Needs Can Transorm Relationships

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Author

David Shaddock

ISBN #

0765701634

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David M Shaddock from Troy, NY, age ~66 Get Report