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Heidi B Cao

from Portland, OR
Age ~48

Heidi Cao Phones & Addresses

  • 4250 192Nd Ave, Portland, OR 97229 (503) 439-6637
  • 3549 Heather Rd, Madison, WI 53705 (608) 231-6169
  • Woodstock, IL
  • 2312 SW Canby Ct, Portland, OR 97219 (503) 439-6637

Work

Position: Personal Care and Service Occupations

Publications

Us Patents

One Component Euv Photoresist

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US Patent:
7005227, Feb 28, 2006
Filed:
Jan 21, 2004
Appl. No.:
10/762031
Inventors:
Wang Yueh - Portland OR, US
Heidi Cao - Portland OR, US
Assignee:
Intel Corporation - Santa Clara CA
International Classification:
G03F 7/023
G03F 7/30
US Classification:
430168, 430190, 430326
Abstract:
In one embodiment, a photoactive compound may be attached to a polymer backbone. This embodiment may be more resistant to the generation of reactive outgassing components and may exhibit better contrast.

Resist Compounds Including Acid Labile Groups Attached To Polymeric Chains At Anhydride Linkages

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US Patent:
7147986, Dec 12, 2006
Filed:
Mar 31, 2004
Appl. No.:
10/815606
Inventors:
Wang Yueh - Portland OR, US
Heidi B. Cao - Portland OR, US
Assignee:
Intel Corporation - Santa Clara CA
International Classification:
G03F 7/004
US Classification:
4302701, 430325, 430326, 430330, 430434, 430494
Abstract:
A compound including a polymeric chain, and an acid labile group attached to the polymeric chain at an anhydride linkage is disclosed. Compositions including the compound, and methods of using the compositions are also disclosed.

Enabling Chain Scission Of Branched Photoresist

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US Patent:
7166413, Jan 23, 2007
Filed:
Oct 12, 2004
Appl. No.:
10/964200
Inventors:
Heidi B. Cao - Portland OR, US
Robert P. Meagley - Beaverton OR, US
Assignee:
Intel Corporation - Santa Clara CA
International Classification:
G03F 7/039
US Classification:
4302701, 430905, 430908, 430910, 522 2, 522130, 522163, 522165, 522914
Abstract:
By using a branched long chained chain scission polymer as a photoresist for EUV and 157 nanometer applications, a relatively higher molecular weight polymer with good mechanical properties may be achieved. In addition, by using chain scission technology, line edge roughness and resolution may be improved at the same time.

Non-Outgassing Low Activation Energy Resist

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US Patent:
7226718, Jun 5, 2007
Filed:
Sep 15, 2005
Appl. No.:
11/228589
Inventors:
Heidi B. Cao - Portland OR, US
Wang Yueh - Portland OR, US
Jeanette M. Roberts - Portland OR, US
Assignee:
Intel Corporation - Santa Clara CA
International Classification:
G03F 7/039
G03F 7/38
G03F 7/30
US Classification:
4302701, 430330, 430905, 430326
Abstract:
Numerous embodiments of a method to prevent outgassing from a low activation energy photoresist are described. In one embodiment of the present invention, a photoresist material is dispensed over a substrate to form a photoresist layer. The photoresist layer includes branched polymers coupled with acetal or ketal linkages. An exposed portion of the photoresist layer is exposed to a radiation treatment to cleave the acetal or ketal linkages and separate the branched polymers. The photoresist layer is baked at a temperature below about 100° C. , and the separated branched polymers are too large to outgass from the photoresist layer.

Enhancing Photoresist Performance Using Electric Fields

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US Patent:
7374867, May 20, 2008
Filed:
Oct 6, 2003
Appl. No.:
10/679816
Inventors:
Robert Bristol - Portland OR, US
Heidi Cao - Portland OR, US
Manish Chandhok - Portland OR, US
Robert Meagley - Hillsboro OR, US
Vijayakumar S. Ramachandrarao - Hillsboro OR, US
Assignee:
Intel Corporation - Santa Clara CA
International Classification:
G03F 7/26
US Classification:
430322
Abstract:
Electric fields may be advantageously used in various steps of photolithographic processes. For example, prior to the pre-exposure bake, photoresists that have been spun-on the wafer may be exposed to an electric field to orient aggregates or other components within the unexposed photoresist. By aligning these aggregates or other components with the electric field, line edge roughness may be reduced, for example in connection with 193 nanometer photoresist. Likewise, during exposure, electric fields may be applied through uniquely situated electrodes or using a radio frequency coil. In addition, electric fields may be applied at virtually any point in the photolithography process by depositing a conductive electrode, which is subsequently removed during development. Finally, electric fields may be applied during the developing process to improve line edge roughness.

Photoresists With Reduced Outgassing For Extreme Ultraviolet Lithography

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US Patent:
7427463, Sep 23, 2008
Filed:
Oct 14, 2003
Appl. No.:
10/686031
Inventors:
Heidi Cao - Portland OR, US
Wang Yueh - Portland OR, US
Assignee:
Intel Corporation - Santa Clara CA
International Classification:
G03F 7/00
G03F 7/004
US Classification:
4302701, 430311
Abstract:
Chemically amplified photoresists with reduced outgassing or no outgassing may be used in a vacuum environment of a lithography tool, such as an extreme ultraviolet lithography tool. A chemically amplified photoresist has a photoacid generator molecule. When the photoacid generator is irradiated, an acid is generated. The acid reacts with a protecting group in the photoresist to form an open-ring structure with reduced outgassing or no outgassing.

Low Outgassing And Non-Crosslinking Series Of Polymers For Euv Negative Tone Photoresists

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US Patent:
7442487, Oct 28, 2008
Filed:
Dec 30, 2003
Appl. No.:
10/750042
Inventors:
Wang Yueh - Portland OR, US
Heidi Cao - Portland OR, US
Manish Chandhok - Beaverton OR, US
Assignee:
Intel Corporation - Santa Clara CA
International Classification:
G03F 7/00
G03F 7/004
US Classification:
4302701, 430312, 430214
Abstract:
A series structure of a chemically amplified negative tone photoresist that is not based on cross-linking chemistry is herein described. The photoresist may comprise: a first aromatic structure copolymerized with a cycloolefin, wherein the cycloolefin is functionalized with a di-ol. The photoresist may also include a photo acid generator (PAG). When at least a portion of the negative tone photoresist is exposed to light (EUV or UV radiation), the PAG releases an acid, which reacts with the functionalized di-ol to rearrange into a ketone or aldehyde. Then new ketone or aldehyde is less soluble in developer solution, resulting in a negative tone photoresist.

Method Of Reducing Sensitivity Of Euv Photoresists To Out-Of-Band Radiation And Euv Photoresists Formed According To The Method

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US Patent:
7459260, Dec 2, 2008
Filed:
Mar 29, 2005
Appl. No.:
11/093889
Inventors:
Manish Chandhok - Beaverton OR, US
Wang Yueh - Portland OR, US
Heidi Cao - Portland OR, US
Assignee:
Intel Corporation - Santa Clara CA
International Classification:
G03F 7/004
G03F 7/039
US Classification:
4302701
Abstract:
A modified EUV photoresist and a method of making the resist. The modified resist includes an EUV photoresist and a LAM incorporated into the EUV photoresist.
Heidi B Cao from Portland, OR, age ~48 Get Report