Inventors:
J. Wallace Parce - Palo Alto CA, US
Paul Bernatis - Sunnyvale CA, US
Robert Dubrow - San Carlos CA, US
William P. Freeman - San Mateo CA, US
Joel Gamoras - Vallejo CA, US
Shihai Kan - San Jose CA, US
Andreas Meisel - Redwood City CA, US
Baixin Qian - Cupertino CA, US
Jeffery A. Whiteford - Belmont CA, US
Jonathan Ziebarth - Santa Barbara CA, US
Assignee:
Samsung Electronics Co., Ltd.
International Classification:
C30B 23/00
C30B 25/00
C30B 28/12
C30B 28/14
US Classification:
2523016S, 428403, 428404, 427212, 427215, 977813, 977824
Abstract:
Matrixes doped with semiconductor nanocrystals are provided. In certain embodiments, the semiconductor nanocrystals have a size and composition such that they absorb or emit light at particular wavelengths. The nanocrystals can comprise ligands that allow for mixing with various matrix materials, including polymers, such that a minimal portion of light is scattered by the matrixes. The matrixes of the present invention can also be utilized in refractive index matching applications. In other embodiments, semiconductor nanocrystals are embedded within matrixes to form a nanocrystal density gradient, thereby creating an effective refractive index gradient. The matrixes of the present invention can also be used as filters and antireflective coatings on optical devices and as down-converting layers. Processes for producing matrixes comprising semiconductor nanocrystals are also provided. Nanostructures having high quantum efficiency, small size, and/or a narrow size distribution are also described, as are methods of producing indium phosphide nanostructures and core-shell nanostructures with Group II-VI shells.