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William J Juhasz

from Grand Haven, MI
Age ~56
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Also known as:
William John Juhasz, William F Juhasz, William Fr Juhasz, Bill J Juhasz, Bill F Juhasz
Phone and address:
14950 Sandstone Rd, Grand Haven, MI 49417
(616) 850-2609
Related to:
Ernest S Juhasz, 79Winifred Lavisa JuhaszJennifer L Juhasz, 56Mary Anne Juhasz, 76Brenda L Juhasz, 62
Connected to:
Jenny JuhaszLisa A Juhl, 64Matthew S Juhl, 50Jeffrey L Juhlin, 77Farhana Jui, 31Nathan K Juilfs, 49Rhea A Juiliani, 48Hector R Juillerat, 79Watson W Juillet, 44Gian P Juinio, 41

William Juhasz Phones & Addresses

  • 14950 Sandstone Rd, Grand Haven, MI 49417 (616) 850-2609
  • 1926 Eagle Point Ct, South Bend, IN 46628
  • Stillwater, OK
  • 1420 Bond St, Niles, MI 49120 (269) 684-1265
  • Moses Lake, WA
  • Mishawaka, IN

Publications

Us Patents

Insulated Glass Window Shade

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US Patent:
20070125504, Jun 7, 2007
Filed:
Dec 2, 2005
Appl. No.:
11/292719
Inventors:
Keith Early - Byron Center MI, US
James Allardyce - Grandville MI, US
Michael Eveland - Fennville MI, US
Andrew Krochmal - Grand Haven MI, US
Joshua Cornish - Holland MI, US
William Juhasz - Grand Haven MI, US
Richard Homer - Grand Haven MI, US
Troy Wyman - Grand Rapids MI, US
International Classification:
A47H 1/00
US Classification:
160107000
Abstract:
An insulated glass window assembly including a cordless integral shade with level correction, a sliding follower, and an air permeable spacer assembly. Cords are eliminated by confining the window covering movement to one dimension. Level correction is achieved by pivotally connecting the shade bar to the supporting operator or shade support, so that the bar can be re-leveled by raising or lowering the bar against the IG spacer. The follower slides in a track on one side of the IG. The spacer includes an air passageway between the desiccant chamber and the space between IG space, and the hole is covered by an air-permeable patch to prevent unwanted leakage of desiccant into the viewable area.

Rod Replenishment System For Use In Single Crystal Silicon Production

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US Patent:
20020108557, Aug 15, 2002
Filed:
Oct 26, 2001
Appl. No.:
10/040240
Inventors:
Henry Wood - Moses Lake WA, US
John Hill - Moses Lake WA, US
Jay Nelson - Moses Lake WA, US
William Juhasz - South Bend IN, US
Howard Dawson - Anacortes WA, US
International Classification:
C30B015/00
C30B021/06
C30B027/02
C30B028/10
C30B001/00
C30B030/04
US Classification:
117/013000, 117/911000, 117/218000, 117/900000
Abstract:
A system is disclosed for efficient utilization of charge replenishment rods in Czochralski silicon crystal growing processes.

Method For Increasing Charge Size For Single Crystal Silicon Production

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US Patent:
20020108558, Aug 15, 2002
Filed:
Oct 5, 2001
Appl. No.:
09/972409
Inventors:
John Hill - Moses Lake WA, US
Jay Nelson - Moses Lake WA, US
William Juhasz - South Bend IN, US
Henry Wood - Moses Lake WA, US
International Classification:
C30B015/00
C30B013/00
C30B028/08
C30B027/02
C30B030/04
C30B028/10
C30B021/06
C30B021/04
US Classification:
117/037000, 117/217000, 117/218000
Abstract:
A system is disclosed for efficient utilization of charge replenishment rods in Czochralski silicon crystal growing processes.
Control profile
William J Juhasz from Grand Haven, MI, age ~56 Get Report