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Aaron H Ribner

from North Brunswick, NJ
Age ~83
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Also known as:
Aaron Henry Ribner, Aaron Ribner, Andrew Ribner
Phone and address:
1327 Aaron Rd, New Brunswick, NJ 08902
(732) 422-1839
Related to:
Andrew Ribner, 43Roberta Ribner, 81
Connected to:
Evan J Ribnick, 41Harlan R Ribnik, 70Kathleen A Ribniscky, 63Adriana M Ribon, 62Vincent Ribortone, 52David M Ribot, 54Manuel E Ribot, 61Mildred RibotRobert R Riboul, 74Denise L Ribstein, 67

Aaron Ribner Phones & Addresses

  • 1327 Aaron Rd, North Brunswick, NJ 08902 (732) 422-1839
  • Edison, NJ
  • N Brunswick, NJ
  • 1327 Aaron Rd, N Brunswick, NJ 08902 (732) 422-1839

Work

Company: Plasmatic systems Jun 1987 Position: President

Education

Degree: BS School / High School: City University of New York-Brooklyn College

Languages

English

Interests

Plasma Cleaning • Plasma Etching

Emails

a***[email protected]

Industries

Electrical/Electronic Manufacturing

Resumes

Resumes

Aaron Ribner Photo 1

President

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Location:
1327 Aaron Rd, North Brunswick, NJ 08902
Industry:
Electrical/Electronic Manufacturing
Work:
Plasmatic Systems since Jun 1987
President
Education:
City University of New York-Brooklyn College
BS University of Michigan
PhD, Chemistry
Interests:
Plasma Cleaning
Plasma Etching
Languages:
English

Business Records

Name / Title
Company / Classification
Phones & Addresses
Aaron Ribner
President
Plasmatic Systems Inc
Electrical/Electronic Manufacturing · Mfg Biological Products Mfg Surgical/Medical Instruments
1327 Aaron Rd, North Brunswick, NJ 08902
(732) 297-9107

Publications

Us Patents

Microwave Plasma Etching Machine And Method Of Etching

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US Patent:
48044318, Feb 14, 1989
Filed:
Nov 3, 1987
Appl. No.:
7/116036
Inventors:
Aaron Ribner - North Brunswick NJ
International Classification:
C23F 102
US Classification:
156345
Abstract:
A conventional microwave over has been modified such that it may be used for plasma etching and cleaning. Oxygen or Argon gas is introduced into a vacuum chamber (18) inside a conventional microwave oven (10) that has been modified to allow gas from a canister outside the microwave oven to pass through the rear wall of the microwave oven into the vacuum chamber (18). A rotating antenna (16) ignites the gas to produce a uniform plasma which etches the substrate (28). Reaction by products are evacuated from the vacuum chamber by a vacuum pump positioned outside the microwave oven (10). The intensity of the microwaves can be adjusted for plasma etching via a maximum power control device which has been added to the electronic control circuit of the microwave oven. In addition, a vacuum chamber with a water cooling feature is provided to prevent thermal damage to the substrate during plasma processing.
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Aaron H Ribner from North Brunswick, NJ, age ~83 Get Report