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Akio Kaneko

from Fishkill, NY
Age ~50
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Connected to:
Aya Kaneko, 56Kazuo Kaneko, 83Kenichi Kaneko, 34Naomi E Kaneko, 72Nobuyoshi L Kaneko, 63Takayoshi Kaneko, 61Terumi Kaneko, 60Anita M Kanelis, 71Robert J Kanellas, 73Thomas P Kanell, 65

Akio Kaneko Phones & Addresses

  • Fishkill, NY
  • Danbury, CT

Publications

Us Patents

Semiconductor Device And Method Of Fabricating The Same

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US Patent:
8039333, Oct 18, 2011
Filed:
Jan 26, 2009
Appl. No.:
12/359974
Inventors:
Akio Kaneko - Fishkill NY, US
Seiji Inumiya - Kanagawa, JP
Tomonori Aoyama - Kanagawa, JP
Takuya Kobayashi - Kanagawa, JP
Assignee:
Kabushiki Kaisha Toshiba - Tokyo
International Classification:
H01L 21/336
H01L 21/8234
US Classification:
438198, 438197, 438482, 438486, 438788, 257E21297, 257E21412, 257E21379, 257E29003
Abstract:
A method of fabricating a semiconductor device according to one embodiment includes: forming a SiGe crystal layer on a semiconductor substrate, the SiGe crystal layer having a first plane and a second plane inclined with respect to the first plane; forming an amorphous Si film on the SiGe crystal layer; crystallizing a portion located adjacent to the first and second planes of the amorphous Si film by applying heat treatment using the first and second planes of the SiGe crystal layer as a seed, thereby forming a Si crystal layer; selectively removing or thinning a portion of the amorphous Si film that is not crystallized by the heat treatment; applying oxidation treatment to a surface of the Si crystal layer, thereby forming a gate insulating film on the surface of the Si crystal layer; and forming a gate electrode on the gate insulating film.

Semiconductor Device And Method For Manufacturing Same

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US Patent:
8084834, Dec 27, 2011
Filed:
Jul 30, 2009
Appl. No.:
12/512221
Inventors:
Akio Kaneko - Fishkill NY, US
Seiji Inumiya - Kanagawa-ken, JP
Assignee:
Kabushiki Kaisha Toshiba - Tokyo
International Classification:
H01L 21/8234
US Classification:
257411, 257E21625, 438591
Abstract:
A semiconductor device of the present invention includes: a semiconductor layer; a gate insulation film provided on the semiconductor layer and including at least one of Hf and Zr; and a gate electrode provided on the gate insulation film and including a carbonitride which includes at least one of Hf and Zr.

Semiconductor Device And Method For Manufacturing Same

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US Patent:
8404575, Mar 26, 2013
Filed:
Dec 6, 2011
Appl. No.:
13/311850
Inventors:
Akio Kaneko - Fishkill NY, US
Seiji Inumiya - Kanagawa-ken, JP
Assignee:
Kabushiki Kaisha Toshiba - Tokyo
International Classification:
H01L 21/3205
US Classification:
438591, 438592, 257411, 257 21625
Abstract:
A semiconductor device of the present invention includes: a semiconductor layer; a gate insulation film provided on the semiconductor layer and including at least one of Hf and Zr; and a gate electrode provided on the gate insulation film and including a carbonitride which includes at least one of Hf and Zr.
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Akio Kaneko from Fishkill, NY, age ~50 Get Report