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Ashay S Chitnis

from Santa Barbara, CA
Age ~47
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Also known as:
Ashay Christis, Ashay S
Related to:
Anvita A Chitnis, 44Suhas Chitnis
Connected to:
Hemant P Chitnis, 61Kaunteya Chitnis, 36Salil S Chitnis, 36Vinay V Chitnis, 50Nandini Chitoor, 47Sunil K Chitrapu, 46Ketan ChitreReshma P Chitre, 40Mohammad Chitsaz, 89Linda G Chittam, 66

Ashay Chitnis Phones & Addresses

  • Santa Barbara, CA
  • Durham, NC
  • Columbia, SC
  • Daly City, CA
  • San Francisco, CA
  • Sunnyvale, CA

Work

Company: Glass

Education

School / High School: South Carolina (Wildlife) Department of Natural Resources, Informix Software, pune Dec 2002 Specialities: Professor

Publications

Us Patents

Led Chip

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US Patent:
D583338, Dec 23, 2008
Filed:
Sep 7, 2007
Appl. No.:
29/284434
Inventors:
John Edmond - Cary NC, US
James Ibbetson - Santa Barbara CA, US
Michael John Bergmann - Chapel Hill NC, US
Amber Christine Salter - Durham NC, US
David Todd Emerson - Chapel Hill NC, US
Ashay Chitnis - Goleta CA, US
Bernd P. Keller - Santa Barbara CA, US
Kevin Haberern - Cary NC, US
Assignee:
Cree, Inc. - Durham NC
International Classification:
1303
US Classification:
D13180

Led Chip

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US Patent:
D593968, Jun 9, 2009
Filed:
Nov 25, 2008
Appl. No.:
29/328502
Inventors:
John Edmond - Cary NC, US
James Ibbetson - Santa Barbara CA, US
Michael John Bergmann - Chapel Hill NC, US
Amber Christine Salter - Durham NC, US
David Todd Emerson - Chapel Hill NC, US
Ashay Chitnis - Goleta CA, US
Bernd P. Keller - Santa Barbara CA, US
Kevin Haberern - Cary NC, US
Assignee:
Cree, Inc. - Durham NC
International Classification:
1303
US Classification:
D13180

Led Chip

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US Patent:
D602450, Oct 20, 2009
Filed:
Nov 13, 2008
Appl. No.:
29/327786
Inventors:
John Edmond - Cary NC, US
James Ibbetson - Santa Barbara CA, US
Michael John Bergmann - Chapel Hill NC, US
Amber Christine Salter - Durham NC, US
David Todd Emerson - Chapel Hill NC, US
Ashay Chitnis - Goleta CA, US
Bernd P. Keller - Santa Barbara CA, US
Kevin Haberern - Cary NC, US
Assignee:
Cree, Inc. - Durham NC
International Classification:
1303
US Classification:
D13180

Led Chip

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US Patent:
D616839, Jun 1, 2010
Filed:
Nov 13, 2008
Appl. No.:
29/327793
Inventors:
John Edmond - Cary NC, US
Amber Christine Salter - Durham NC, US
Ashay Chitnis - Goleta CA, US
James Ibbetson - Santa Barbara CA, US
Bernd Peter Keller - Santa Barbara CA, US
Assignee:
Cree, Inc. - Durham NC
International Classification:
1303
US Classification:
D13180

Bulk Acoustic Device And Method For Fabricating

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US Patent:
7982363, Jul 19, 2011
Filed:
May 14, 2007
Appl. No.:
11/803449
Inventors:
Ashay Chitnis - Goleta CA, US
Assignee:
Cree, Inc. - Durham NC
International Classification:
H03H 9/125
US Classification:
310313R, 310320, 310365
Abstract:
A method for fabricating a bulk acoustic wave (BAW) device comprising providing a growth substrate and growing an Group-III nitride epitaxial layer on the growth substrate. A first electrode is deposited on the epitaxial layer. A carrier substrate is provided and the growth substrate, epitaxial layer and first electrode combination is flip-chip mounted on the carrier substrate. The growth substrate is removed and a second electrode is deposited on the epitaxial layer with the epitaxial layer sandwiched between the first and second electrodes. A bulk acoustic wave (BAW) device comprises first and second metal electrodes and a Group-III nitride epitaxial layer sandwiched between the first and second electrodes. A carrier substrate is included, with the first and second electrodes and epitaxial layer on the carrier substrate.

Ohmic Contacts To Nitrogen Polarity Gan

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US Patent:
8021904, Sep 20, 2011
Filed:
Jan 31, 2008
Appl. No.:
12/012376
Inventors:
Ashay Chitnis - Goleta CA, US
Assignee:
Cree, Inc. - Durham NC
International Classification:
H01L 21/00
H01L 27/15
H01L 29/165
H01L 31/12
H01L 31/153
H01L 33/00
US Classification:
438 46, 438105, 257E21476, 257 85
Abstract:
Contacting materials and methods for forming ohmic contact to the N-face polarity surfaces of Group-III nitride based semiconductor materials, and devices fabricated using the methods. One embodiment of a light emitting diode (LED) a Group-III nitride active epitaxial region between two Group-III nitride oppositely doped epitaxial layers. The oppositely doped layers have alternating face polarities from the Group III and nitrogen (N) materials, and at least one of the oppositely doped layers has an exposed surface with an N-face polarity. A first contact layer is included on and forms an ohmic contact with the exposed N-face polarity surface. In one embodiment, the first contact layer comprises indium nitride.

Dielectric Wafer Level Bonding With Conductive Feed-Throughs For Electrical Connection And Thermal Management

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US Patent:
20070284602, Dec 13, 2007
Filed:
Apr 3, 2007
Appl. No.:
11/732559
Inventors:
Ashay Chitnis - Goleta CA, US
James Ibbetson - Santa Barbara CA, US
International Classification:
H01L 33/00
H01L 21/30
H01L 23/52
US Classification:
257098000, 257750000, 438026000, 438455000, 257E23141, 257E33056, 257E21211
Abstract:
A method for fabricating semiconductor and electronic devices at the wafer level is described. In this method, dielectric material is used to wafer bond a device wafer to a submount wafer, after which vias can be structured into the submount wafer and dielectric bonding material to access contact pads on the bonded surface of the device wafer. The vias may subsequently be filled with electrically and thermally conducting material to provide electrical contacts to the device and improve the thermal properties of the finished device, respectively. The post-bonding process described provides a simple, cost-effective, non-alignment method for fabricating a variety of electronic and semiconductor devices, particularly light emitting diodes with electrical contacts at the bottom of the chip.

Permanent Wafer Bonding Using Metal Alloy Preform Discs

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US Patent:
20080096365, Apr 24, 2008
Filed:
Oct 20, 2006
Appl. No.:
11/584135
Inventors:
Ashay Chitnis - Goleta CA, US
International Classification:
H01L 21/46
H01L 33/00
US Classification:
438455, 438458, 257778, 257 79
Abstract:
A method for fabricating semiconductor devices at the wafer level, and devices fabricated using the method, are described. Wafer-level bonding using a relatively thick layer of electrically conducting bond medium was used to achieve void-free permanent wafer level bonding. The bond medium can be introduced to the pre-bonded wafers by deposition or as a preform. The invention provides a low cost, simple and reliable wafer bonding technology which can be used in a variety of device fabrication processes, including flip chip packaging.
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Ashay S Chitnis from Santa Barbara, CA, age ~47 Get Report