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Brian R Harkness

from Midland, MI
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Also known as:
B Harkness, Brian Robert Harkness
Phone and address:
5411 Wanetah Dr, Midland, MI 48640
(989) 837-6249
Connected to:
Bernie C Harkness, 78Charles L Harkness, 74Clint M Harkness, 43Curtis D Harkness, 37Javaughn T Harkness, 38Jim Harkness, 69Jordan Harkness, 34Melinda M Harkness, 62Owen Harkness, 43Philip G Harkness, 56

Brian Harkness Phones & Addresses

  • 5411 Wanetah Dr, Midland, MI 48640 (989) 837-6249

Resumes

Resumes

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R And D Technology Leader

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Location:
Midland, MI
Industry:
Chemicals
Work:
Dow Corning 2008 - Dec 2013
Global Product Development Manager
Dow Corning 1999 - 2003
Product Development Team Leader
Dow Corning 1995 - 1999
European Expertise Center Leader
Dow Corning Japan 1992 - 1995
Research Specialist
Dow 1992 - 1995
R and D Technology Leader
Education:
Tokyo Institute of Technology 1990 - 1992
Mcgill University 1986 - 1990
Doctorates, Doctor of Philosophy, Philosophy, Chemistry The University of British Columbia 1984 - 1986
Master of Science, Masters, Chemistry The University of British Columbia 1980 - 1984
Bachelors, Bachelor of Science, Chemistry
Skills:
Electronics
Polymers
Coatings
Materials
Adhesives
Polymer Science
R&D
Polymer Chemistry
Chemistry
Raw Materials
Resin
Plastics
Commercialization
Product Development
Design of Experiments
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Brian Harkness

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Brian Harkness

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Brian Harkness

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Business Records

Name / Title
Company / Classification
Phones & Addresses
Brian Harkness
Manager
Eastex Shavings, LLC
Brian Harkness
MAGAZINE EXPRESS, LTD
Brian Harkness
ABRANDA, LC

Publications

Us Patents

Semiconductor Package And Method Of Preparing Same

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US Patent:
6617674, Sep 9, 2003
Filed:
Feb 20, 2001
Appl. No.:
09/789083
Inventors:
Gregory Scott Becker - Sanford MI
Geoffrey Bruce Gardner - Sanford MI
Brian Robert Harkness - Midland MI
Louise Ann Malenfant - Midland MI
Satyendra Kumar Sarmah - Midland MI
Assignee:
Dow Corning Corporation - Midland MI
International Classification:
H01L 2302
US Classification:
257678, 257700, 257758, 257738, 257701, 257620, 257618, 257784, 257773, 257780, 438106, 438127, 438125, 438460, 438612, 438613, 438614
Abstract:
A semiconductor package comprising a wafer having an active surface comprising at least one integrated circuit, wherein each integrated circuit has a plurality of bond pads; and a cured silicone layer covering the surface of the wafer, provided at least a portion of each bond pad is not covered with the silicone layer and wherein the silicone layer is prepare by the method of the invention.

Hydrosilsesquioxane Resin Compositions Having Improved Thin Film Properties

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US Patent:
6737117, May 18, 2004
Filed:
Apr 5, 2002
Appl. No.:
10/116953
Inventors:
Ronald P. Boisvert - Midland MI
Duane R. Bujalski - Auburn MI
Brian R. Harkness - Midland MI
Zhongtao Li - Midland MI
Kai Su - Midland MI
Bianxiao Zhong - Midland MI
Assignee:
Dow Corning Corporation - Auburn MI
International Classification:
B05D 304
US Classification:
427377, 427387, 427515, 525477
Abstract:
Herein is disclosed a resin solution, comprising (a) about 0. 1 solids wt % to about 50 solids wt % of an organosiloxane resin comprising the formula (RSiO ) (RâSiO ) , wherein R is selected from the group consisting of C -C alkyl, C -C alkenyl, C -C alkoxy, C -C alkenoxy, and C -C substituted hydrocarbon; Râ is selected from the group consisting of âH, C -C unsubstituted hydrocarbon, and C -C substituted hydrocarbon; x is from about 5 mole % to about 75 mole %; y is from about 10 mole % to about 95 mole %; and x+y is at least about 40 mole %; and (b) about 50 solids wt % to about 99. 9 solids wt % of a resin comprising at least about 90 mole % of the formula HSiO. Also disclosed herein is a method of preparing such a resin solution, as well as a method of preparing a solid coating, comprising (i) coating the resin solution on a surface; (ii) removing the solvent from the resin solution; (iii) removing R groups from the organosiloxane resin; and (iv) curing the resin solution, to form the solid coating. Coatings prepared from the resins disclosed herein have relatively low dielectric constants and also have relatively low SiH content and relatively high modulus.

Etch-Stop Resins

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US Patent:
6924346, Aug 2, 2005
Filed:
Oct 4, 2002
Appl. No.:
10/491352
Inventors:
Ronald Boisvert - Midland MI, US
Stelian Grigoras - Midland MI, US
David Ha - Midland MI, US
Brian Harkness - Midland MI, US
Craig Yeakle - Midland MI, US
Assignee:
Dow Corning Corporation - Midland MI
International Classification:
C08G077/12
US Classification:
528 31, 528 43, 427387, 257E23167, 257E21705, 257E21576, 438781, 10628714, 10628712
Abstract:
Silicone resins comprising 5 to 50 mole % of (PhSiO(OH)) units and 50 to 95 mole % (HSiO(OH)), where Ph is a phenyl group, x has a value of 0, 1 or 2 and wherein the cured silicone resin has a critical surface free energy of 30 dynes/cm or higher. These resins are useful as etch stop layers for organic dielectric materials having a critical surface free energy of 40 dynes/cm or higher.

Method For Forming And Removing A Patterned Silicone Film

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US Patent:
7517808, Apr 14, 2009
Filed:
Jul 28, 2003
Appl. No.:
10/565036
Inventors:
Gregory Becker - Sanford MI, US
Geoffrey Gardner - Sanford MI, US
Brian Harkness - Midland MI, US
Assignee:
Dow Corning Corporation - Midland MI
International Classification:
H01L 21/469
H01B 13/00
C03C 15/00
US Classification:
438745, 216 21, 216 41, 438781
Abstract:
A method for reworking semiconductor materials includes: (i) applying a silicone composition to a surface of a substrate to form a film, (ii) exposing a portion of the film to radiation to produce a partially exposed film having non-exposed regions covering a portion of the surface and exposed regions covering the remainder of the surface; (iii) heating the partially exposed film for an amount of time such that the exposed regions are substantially insoluble in a developing solvent and the non-exposed regions are soluble in the developing solvent; (iv) removing the non-exposed regions of the heated film with the developing solvent to form a patterned film; (v) heating the patterned film for an amount of time sufficient to form a cured silicone layer; and (vi) removing all or a portion of the cured silicone layer by exposure to an anhydrous etching solution including an organic solvent and abase.

Temporary Wafer Bonding Method For Semiconductor Processing

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US Patent:
7541264, Jun 2, 2009
Filed:
Feb 7, 2006
Appl. No.:
11/795423
Inventors:
Geoffrey Bruce Gardner - Gilbert AZ, US
Brian Robert Harkness - Midland MI, US
Assignee:
Dow Corning Corporation - Midland MI
International Classification:
H01L 21/30
H01L 21/46
US Classification:
438459, 257E21122
Abstract:
A method for temporary wafer bonding employs an addition reaction curable adhesive composition. The adhesive composition may include (A) a polyorganosiloxane containing an average of at least two silicon-bonded unsaturated organic groups per molecule, (B) an organosilicon compound containing an average of at least two silicon-bonded hydrogen atoms per molecule in an amount sufficient to cure the composition, (C) a catalytic amount of a hydrosilylation catalyst, and (D) a solvent. The film prepared by curing the composition is removable with an etching solution.

Lithography Processes Using Phase Change Compositions

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US Patent:
8147742, Apr 3, 2012
Filed:
Sep 23, 2005
Appl. No.:
11/661028
Inventors:
Wei Chen - Midland MI, US
Brian Robert Harkness - Midland MI, US
Lenin James Petroff - Bay City MI, US
Assignee:
Dow Corning Corporation - Midland MI
International Classification:
B29C 33/70
US Classification:
264317, 264219, 264225
Abstract:
A lithography method includes the steps of: A) filling a mold having a patterned surface with a phase change composition at a temperature above the phase change temperature of the phase change composition; B) hardening the phase change composition to form a patterned feature; C) separating the mold and the patterned feature; optionally D) etching the patterned feature; optionally E) cleaning the mold; and optionally F) repeating steps A) to D) reusing the mold. The PCC may include an organofunctional silicone wax.

Method Of Preparing A Patterned Film With A Developing Solvent

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US Patent:
8227181, Jul 24, 2012
Filed:
Aug 8, 2007
Appl. No.:
12/377246
Inventors:
Herman C. G. D. C. Meynen - Lubbeek, BE
Brian Harkness - Midland MI, US
Assignee:
Dow Corning Corporation - Midland MI
International Classification:
G03F 7/00
G03F 7/26
G03F 7/32
G03F 7/40
US Classification:
430331, 4302701, 430317, 430322, 430330, 430434, 430435, 430447
Abstract:
A method of preparing a patterned film on a substrate includes applying a silicone composition onto a substrate to form a film of the silicone composition. A portion of the film is exposed to radiation to produce a partially exposed film having an exposed region and a non-exposed region. The partially exposed film is heated for a sufficient amount of time and at a sufficient temperature to substantially insolubilize the exposed region in a developing solvent that includes a siloxane component. The non-exposed region of the partially exposed film is removed with the developing solvent to reveal a film-free region on the substrate and to form the patterned film including the exposed region that remains on the substrate. The film-free regions is substantially free of residual silicone due to the presence of the siloxane component in the developing solvent.

Light Emitting Device Encapsulated With Silicones And Curable Silicone Compositions For Preparing The Silicones

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US Patent:
8258502, Sep 4, 2012
Filed:
Feb 1, 2007
Appl. No.:
12/223133
Inventors:
Makoto Yoshitake - Funabashi, JP
Masashi Murakami - Fukuyama, JP
Yoshitsugu Morita - Ichihara, JP
Tomoko Kato - Ichihara, JP
Hiroji Enami - Ichihara, JP
Masayoshi Terada - Ichihara, JP
Brian Harkness - Midland MI, US
Tammy Cheng - Flushing NY, US
Michelle Cummings - Midland MI, US
Ann Norris - Midland MI, US
Malinda Howell - Midland MI, US
Assignee:
Dow Corning Corporation - Midland MI
International Classification:
H01L 35/24
US Classification:
257 40, 257 99, 257E51001
Abstract:
A composition includes: (I) an alkenyl functional, phenyl-containing polyorganosiloxane, an Si—H functional phenyl-containing polyorganosiloxane, or a combination thereof; (II) a hydrogendiorganosiloxy terminated oligodiphenylsiloxane having specific molecular weight, an alkenyl-functional, diorganosiloxy-terminated oligodiphenylsiloxane having specific molecular weight, or a combination thereof; and (III) a hydrosilylation catalyst. A light emitting device is made by applying the composition onto a light source followed by curing. The composition provides a cured material with mechanical properties suited for use as an encapsulant for a light emitting device.
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Brian R Harkness from Midland, MI Get Report