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Bruce Sue Yang

from Roseville, MN
Age ~54
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Also known as:
Bruce S Yang, Vruce S Yang, Chue Yang, Sue Yang, Sylo Yang, Chue K Thao, Bruc S Wang
Phone and address:
583 Shryer Ave W, Saint Paul, MN 55113
(651) 492-9103
Related to:
Chou C Yang, 54Pao Yang, 55Patcick MayChue K Thao, 52Choixchao C Yang, 76Chengny P Thao, 45May Y Morgan, 50Sy Xiong MayElliott Cea, 43Yer Y Her, 50Blia ThaoDoua Vue, 62Bai A Yang, 43Patrick M Morgan, 52Thao Ong, 46Jacklyn K Yang, 43
Connected to:
Adrea Yang, 33Ahrheum R Yang, 75Ana H Yang, 59August P Yang, 51Bang YangBingrui Yang, 39Bla Yang, 40Charlene Yang, 58Che Yang, 42Chieng L Yang, 55

Bruce Yang Phones & Addresses

  • 583 Shryer Ave W, Roseville, MN 55113 (651) 492-9103 (651) 487-5684
  • 414 Blair Ave, Saint Paul, MN 55103
  • Minneapolis, MN
  • Stanford, CA
  • Plant City, FL
  • Hyattsville, MD
  • Green Bay, WI
  • Mankato, MN
  • 583 Shryer Ave W, Roseville, MN 55113 (763) 862-7060

Work

Position: Professional/Technical

Education

Degree: High school graduate or higher

Emails

b***[email protected]

Resumes

Resumes

Bruce Yang Photo 1

Micro Welder

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Location:
Minneapolis, MN
Work:
Minco Products, Inc
Micro Welder
Education:
Fresno City College 2009 - 2011
Bruce Yang Photo 2

Partner

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Work:
B&Y Cpa
Partner
Education:
Brock University
Bruce Yang Photo 3

Bruce Yang

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Bruce Yang Photo 4

Real Estate Investor

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Location:
Saint Paul, MN
Industry:
Real Estate
Bruce Yang Photo 5

Bruce Yang

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Bruce Yang Photo 6

Bruce Yang

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Bruce Yang Photo 7

Bruce Yang

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Bruce Yang Photo 8

Bruce Yang

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Location:
United States

Business Records

Name / Title
Company / Classification
Phones & Addresses
Bruce Yang
President
KAI AND FEI YANG FOUNDATION
Civic/Social Association
985 Covington Rd, Los Altos, CA 94024
Bruce Yee Yang
Ky Micro LLC
Consulting · Business Services at Non-Commercial Site
2980 Amoroso Ct, Pleasanton, CA 94566

Publications

Us Patents

Adaptive Algorithm For Mram Manufacturing

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US Patent:
7085183, Aug 1, 2006
Filed:
Jul 13, 2004
Appl. No.:
10/889911
Inventors:
Hsu Kai Yang - Pleasanton CA, US
Xi Zeng Shi - Fremont CA, US
Po-Kang Wang - San Jose CA, US
Bruce Yang - Pleasanton CA, US
Assignee:
Headway Technologies, Inc. - Milpitas CA
Applied Spintronics, Inc. - Milpitas CA
International Classification:
G11C 7/00
US Classification:
365201, 365158, 714719
Abstract:
Magnetic Random Access Memory (MRAM) can be programmed and read as fast as Static Random Access Memory (SRAM) and has the non-volatile characteristics of electrically eraseable programmable read only memory (EEPROM), FLASH EEPROM or one-time-programmable (OTP) EPROM. Due to the randomness of manufacturing process, the magnetic tunnel junctions (MTJ) in MRAM cells will require different row and column current combinations to program and not to disturb the other cells. Based on adaptive current sources for programming, this disclosure teaches methods, designs, test algorithms and manufacturing flows for generating EEPROM, FLASH EEPROM or OTP EPROM like memories from MRAM.

Adaptive Algorithm For Mram Manufacturing

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US Patent:
7224628, May 29, 2007
Filed:
Jul 13, 2006
Appl. No.:
11/486192
Inventors:
Hsu Kai Yang - Pleasanton CA, US
Xi Zeng Shi - Fremont CA, US
Po-Kang Wang - San Jose CA, US
Bruce Yang - Pleasanton CA, US
Assignee:
Headway Technologies, Inc. - Milpitas CA
Applied Spintronics, Inc. - Milpitas CA
International Classification:
G11C 7/00
US Classification:
365201, 365158, 36518508, 36518902, 36518905, 365 96, 365154, 36523003, 36523008
Abstract:
Magnetic Random Access Memory (MRAM) can be programmed and read as fast as Static Random Access Memory (SRAM) and has the non-volatile characteristics of electrically eraseable programmable read only memory (EEPROM), FLASH EEPROM or one-time-programmable (OTP) EPROM. Due to the randomness of manufacturing process, the magnetic tunnel junctions (MTJ) in MRAM cells will require different row and column current combinations to program and not to disturb the other cells. Based on adaptive current sources for programming, this disclosure teaches methods, designs, test algorithms and manufacturing flows for generating EEPROM, FLASH EEPROM or OTP EPROM like memories from MRAM.

Adaptive Algorithm For Mram Manufacturing

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US Patent:
7321519, Jan 22, 2008
Filed:
Jul 12, 2006
Appl. No.:
11/485195
Inventors:
Hsu Kai Yang - Pleasanton CA, US
Xi Zeng Shi - Fremont CA, US
Po-Kang Wang - San Jose CA, US
Bruce Yang - Pleasanton CA, US
Assignee:
Headway Technologies, Inc. - Milpitas CA
Applied Spintronill, Inc. - Milpitas CA
International Classification:
G11C 7/00
US Classification:
365201, 365154, 365158, 36518508, 36518907
Abstract:
Magnetic Random Access Memory (MRAM) can be programmed and read as fast as Static Random Access Memory (SRAM) and has the non-volatile characteristics of electrically eraseable programmable read only memory (EEPROM), FLASH EEPROM or one-time-programmable (OTP) EPROM. Due to the randomness of manufacturing process, the magnetic tunnel junctions (MTJ) in MRAM cells will require different row and column current combinations to program and not to disturb the other cells. Based on adaptive current sources for programming, this disclosure teaches methods, designs, test algorithms and manufacturing flows for generating EEPROM, FLASH EEPROM or OTP EPROM like memories from MRAM.

Adaptive Algorithm For Mram Manufacturing

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US Patent:
7369430, May 6, 2008
Filed:
Jul 12, 2006
Appl. No.:
11/485196
Inventors:
Hsu Kai Yang - Pleasanton CA, US
Xi Zeng Shi - Fremont CA, US
Po-Kang Wang - San Jose CA, US
Bruce Yang - Pleasanton CA, US
Assignee:
Headway Technologies, Inc. - Milpitas CA
Applied Spintronics, Inc. - Milpitas CA
International Classification:
G11C 11/00
US Classification:
365158, 36518907, 365201
Abstract:
Magnetic Random Access Memory (MRAM) can be programmed and read as fast as Static Random Access Memory (SRAM) and has the non-volatile characteristics of electrically eraseable programmable read only memory (EEPROM), FLASH EEPROM or one-time-programmable (OTP) EPROM. Due to the randomness of manufacturing process, the magnetic tunnel junctions (MTJ) in MRAM cells will require different row and column current combinations to program and not to disturb the other cells. Based on adaptive current sources for programming, this disclosure teaches methods, designs, test algorithms and manufacturing flows for generating EEPROM, FLASH EEPROM or OTP EPROM like memories from MRAM.

Method And System For Optimizing The Number Of Word Line Segments In A Segmented Mram Array

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US Patent:
7613868, Nov 3, 2009
Filed:
Jun 9, 2004
Appl. No.:
10/865717
Inventors:
Xizeng Shi - Fremont CA, US
Po-Kang Wang - San Jose CA, US
Bruce Yee Yang - Pleasanton CA, US
Assignee:
Headway Technologies, Inc. - Milpitas CA
International Classification:
G06F 13/16
G11C 11/15
US Classification:
711101, 711103, 365171
Abstract:
A method and system for programming and reading a magnetic memory is disclosed. The magnetic memory includes a plurality of selectable word line segments and a plurality of magnetic storage cells corresponding to each word line segment. The method and system include reading the magnetic storage cells corresponding to a word line segment to determine a state of each magnetic storage cell. The method and system also include writing data to a portion of the magnetic cells corresponding to the word line segment after the reading. The method and system also include rewriting the state to each of a remaining portion of the magnetic storage cells corresponding to the word line segments at substantially the same time as the portion of the magnetic cells are written.

Method And System For Providing Common Read And Write Word Lines For A Segmented Word Line Mram Array

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US Patent:
20050276098, Dec 15, 2005
Filed:
Jun 9, 2004
Appl. No.:
10/865722
Inventors:
Hsu Yang - Pleasanton CA, US
Xizeng Shi - Fremont CA, US
Po-Kang Wang - San Jose CA, US
Bruce Yang - Pleasanton CA, US
International Classification:
G11C011/00
US Classification:
365158000
Abstract:
A method and system for providing a magnetic memory including magnetic memory cells associated with a word line segment is disclosed. The magnetic memory cell includes a magnetic storage device and an isolation device. The isolation device is coupled to the magnetic tunneling junction and with a combined word line for reading and writing to the magnetic memory cell. The magnetic storage device and the isolation device are configured such that no direct current path to ground exists during the writing to the magnetic memory cell. In one aspect, in a write mode, the combined word line associated with the word line segment and the word line segment are activated. In the read mode, at least a portion of the memory cells associated with the word line segment are selected using the combined word line.
Control profile
Bruce Sue Yang from Roseville, MN, age ~54 Get Report