Burn Jeng Lin

53785118, Jan 3, 1995

Jan 25, 1994

8/186401

Thomas J. Cardinali - Burlington VT
Burn J. Lin - Scarsdale NY

International Business Machines Corporation - Armonk NY

B05D 312

427600

Spin coating of resist on a semiconductor wafer is done in a controlled chamber, starting with introducing a resist solvent vapor into the chamber from a nozzle or an adjacent chamber, applying the resist by spraying a very thin layer of the resist material and then removing solvent from the chamber. The result is a saving in resist material and enhanced coating uniformity.

57956855, Aug 18, 1998

Jan 14, 1997

8/783631

Lars W. Liebmann - Poughquag NY
Burn Jeng Lin - Tampa FL
Mark O. Neisser - Wappingers Falls NY

International Business Machines Corporation - Armonk NY

G03F 900

430 5

A method and apparatus for correcting defects in a phase shift mask to be used in photolithography. More specifically, the method of the invention includes creating a second repair mask which contains phase shifters. Regions surrounding the defects on the first mask are made opaque. The design circuitry located in these defective regions is copied onto the second mask. During a second exposure the design circuitry is placed onto the semiconductor wafer. Therefore, this method and apparatus provides an inexpensive solution to a difficult problem.

39718875, Jul 27, 1976

May 9, 1975

5/575908

Burn Jeng Lin - Shrub Oak NY
Yeong Show Lin - Mount Kisco NY

International Business Machines Corporation - Armonk NY

H04N 566

178 73D

A dynamic pattern display and optical data processing system is provided including magnetic bubble devices which may be operated in real-time to produce a multi-tone (gray scale) two dimensional pattern. The display pattern is obtained by directing a light beam, which in certain applications may be linearly polarized, through a plurality of two-dimensional magnetic bubble arrays combined in a stack arrangement. Each magnetic bubble array constitutes a layer which differs in thickness from the other magnetic bubble layers. Each magnetic bubble array is also electronically driven by its own bubble propagating circuit which produces, in most embodiments, a different "local transmissivity" which is determined by whether a bubble or an empty space is propagated to the location. The degree of transmitted intensity is an exponential function of the number of magnetic bubble layers, thus n layers provides 2. sup. n steps of transmitted intensity and a four layer structure provides a sixteen tone gray scale display.

41421078, Feb 27, 1979

Jun 30, 1977

5/811758

Michael Hatzakis - Ossining NY
Constantino Lapadula - Mahopac NY
Burn J. Lin - Katonah NY

International Business Machines Corporation - Armonk NY

G01N 2130

250571

In the process of developing exposed photoresist on a substrate, the endpoint in developing away all of the exposed positive photoresist or any other positive resist is detected by exposing a wafer with a predetermined pattern including an optical grating or other special pattern formed in the photoresist upon a test area. In a system employing this concept, a beam is diffracted by the optics of the grating only at a first angle until the resist forming the grating is removed by development. Then a sensor is activated when an angle of reflection is unblocked when the grating disappears. The system is then turned off to stop development by the sensor in an automatic system or, by the operator in a manual system. A double exposure technique is employed to produce the grating or other special pattern.

55652867, Oct 15, 1996

Nov 17, 1994

8/340992

Burn J. Lin - Tampa FL

International Business Machines Corporation - Armonk NY

G03F 900

430005

A structure and fabrication method for a phase-shifting lithographic mask wherein an attenuated phase-shifting mesh structure (Att PSM) is combined with an alternating-element phase shifting mask (Alt PSM) to provide a mask combination consisting of phase-shifted and unshifted attenuated backgrounds in which the phase-shifted attenuated backgrounds surrounds the unshifted components and the unshifted attenuated background surrounds the phase-shifted components.

52720241, Dec 21, 1993

Apr 8, 1992

7/866651

Burn J. Lin - Austin TX

International Business Machines Corporation - Armonk NY

G03F 900

430 5

A phase-shifting mask is composed of material including a substrate carrying a first phase-shifting layer having a phase-shift of. THETA. , a second phase-shifting layer stacked upon the first layer having a phase-shift of (2. pi. -. THETA. ), and a third phase-shifting layer stacked upon the second layer next with a phase-shift of. THETA. Missing phase-shifters, unwanted phase-shifters, or defects in the transparent films are repaired by removing one or two layers depending upon whether the phase-shifting status has to be retained or altered. In one alternative a large etch selectivity exists between the first, second and third layers, or else a lack of etch selectivity is complemented with etch stop layers embedded between the phase-shifting layers as follows: a) if an defect is found in a phase-shifted area and the defect must be removed without turning the phase-shifted area into a non-phase-shifted area, then two successive layers in the phase-shifted area are removed; b) if an error is found in a non-phase-shift area, then the mask can be repaired in the area surrounding the error by removing the layer in the area to make the area a phase-shifted area; c) if a defect is found in a non-phase-shifted area and the defect must be removed without turning the phase-shifted area into a phase-shifted area, then two successive layers in the non-phase-shifted area are removed.

42118344, Jul 8, 1980

Dec 30, 1977

5/866191

Constantino Lapadula - Mahopac NY
Burn J. Lin - Katonah NY

International Business Machines Corporation - Armonk NY

G03C 516

430326

A photolithographic method wherein a mask is made by pattern exposing and developing a o-quinone diazide sensitized phenol-formaldehyde resist layer, the formed resist mask then being used directly as an exposure mask for a layer of deep ultraviolet (less than 3000A) sensitive resist such as an alkyl methacrylate resist. Since alkyl methacrylate resists are not sensitive to light above 3000A and phenol-formaldehyde resists are opaque to light below 3000A, phenol-formaldehyde resists may be used directly as photoexposure masks for alkyl methacrylate resists using any broad band exposure light source which includes deep ultraviolet. The direct use of a phenol-formaldehyde resist layer as an exposure mask for an alkyl methacrylate resist layer allows more flexible and practical use of resist exposure techniques, including fabrication of an etch resistant mask of high aspect ratio and high resolution without fabrication of an intermediate metallic mask from a material such as chromium.

52885690, Feb 22, 1994

Apr 23, 1992

7/872784

Burn J. Lin - Austin TX

International Business Machines Corporation - Armonk NY

G03F 900

430 5

Feature biassing applied to phase shifting masks is used to improve the exposure latitude and depth of focus of an optical projection imaging system. Making the phase shifters absorptive facilitates a phase shifting mask system for arbitrary layouts. Combining phase shifters of different levels of absorption further enhance the improvements. Even more enhancement can be gained by combining biassing with absorption levels.