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Calvin Michael Curtis

from Denver, CO
Age ~41
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Also known as:
Calvin M Curtis
Phone and address:
1050 Monaco St, Denver, CO 80220
(303) 706-0114
Related to:
Gaylyn Hall, 71Hugh Michael Curtis, 79Barbara J CurtisC CurtisCarol CurtisMargaret A Curtis, 72Candy D Vogler, 41Katherine D Vogler, 41
Connected to:
Alysa Curtis, 33Angela D Curtis, 58Antoine Curtis, 35Audra L Curtis, 42Bridget N Curtis, 48Carlee J Curtis, 45Caryn Curtis, 31Chantal M Curtis, 46Ciara Curtis, 33Cinthia Curtis, 29

Calvin Curtis Phones & Addresses

  • 1050 Monaco St, Denver, CO 80220 (303) 706-0114
  • 1050 S Monaco Pkwy UNIT 121, Denver, CO 80224
  • Centennial, CO
  • Thornton, CO
  • Red Feather Lakes, CO
  • Philadelphia, PA
  • Englewood, CO

Work

Company: Klg corporation - Centennial, CO Feb 2007 Position: Senior project coordinator

Education

School / High School: Harvey Mudd College- Claremont, CA Jan 2000 Specialities: BS in Engineering

Skills

AutoCAD • RAM Concept • Excel • Word • Windows • Linux • Adapt FELT • Project Management • Construction Estimating • Construction Management • MATLAB • LabVIEW • Lathe Operator • Mill Operator

Ranks

Certificate: Engineer Intern Date: December 2007 Organization: Colorado Department of Regulatory Agencies, State Board of Licensure for Architects, Professional Engineers and Professional Land Surveyors

Industries

Construction

Professional Records

License Records

Calvin Michael Curtis

Address:
1050 S Monaco Pkwy UNIT 121, Denver, CO 80224
License #:
64065 - Expired
Issued Date:
Jan 16, 2008
Renew Date:
Jan 16, 2008
Expiration Date:
Dec 29, 2014
Type:
Engineer Intern

Calvin Michael Curtis

Address:
1050 S Monaco Pkwy UNIT 121, Denver, CO 80224
License #:
49454 - Active
Issued Date:
Dec 29, 2014
Renew Date:
Nov 1, 2015
Expiration Date:
Oct 31, 2017
Type:
Professional Engineer

Resumes

Resumes

Calvin Curtis Photo 1

Structural Designer At Ev Studio

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Position:
Structural Designer at EV Studio
Location:
Greater Denver Area
Industry:
Construction
Work:
EV Studio - Denver, CO since Jul 2012
Structural Designer
KLG Corporation Post-Tensioning and Engineering Solutions Feb 2007 - Jan 2011
Senior Project Coordinator
Suncoast Post-Tension Feb 2006 - Feb 2007
Project Coordinator
Front Range Community College Feb 2005 - Aug 2005
IT Technician
Education:
Harvey Mudd College 2000 - 2004
BS, Engineering
Certifications:
Engineer Intern, Colorado Department of Regulatory Agencies, State Board of Licensure for Architects, Professional Engineers and Professional Land Surveyors
Calvin Curtis Photo 2

Calvin Curtis Denver, CO

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Work:
KLG Corporation
Centennial, CO
Feb 2007 to Jan 2011
Senior Project Coordinator
Suncoast Post-Tension, LP
Centennial, CO
Feb 2006 to Jan 2007
Project Coordinator
Front Range Community College
Westminster, CO
Feb 2005 to Aug 2005
Information Technology Technician I
Education:
Harvey Mudd College
Claremont, CA
Jan 2000 to Jan 2004
BS in Engineering
Skills:
AutoCAD, RAM Concept, Excel, Word, Windows, Linux, Adapt FELT, Project Management, Construction Estimating, Construction Management, MATLAB, LabVIEW, Lathe Operator, Mill Operator

Business Records

Name / Title
Company / Classification
Phones & Addresses
Calvin J. Curtis
Principal
Blossoms Unlimited
Motion Picture Distribution Services
1620 S Parfet Ct, Denver, CO 80232
(303) 985-5749

Publications

Us Patents

Passivating Etchants For Metallic Particles

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US Patent:
6436305, Aug 20, 2002
Filed:
Mar 12, 2001
Appl. No.:
09/674061
Inventors:
Douglas L. Schulz - Medford MA
Calvin J. Curtis - Lakewood CO
David S. Ginley - Evergreen CO
Assignee:
Midwest Research Institute - Kansas City MO
International Classification:
C23F 100
US Classification:
216100, 216101, 216102
Abstract:
The present invention provides a process for etching a corrosion layer, such as oxide or hydroxide, from and concomitantly forming a passivating layer on the surface of metallic nanoparticles. A reaction mixture is prepared by dispersing sodium hexafluoroacetylacetonate (Na(hfa)) and a metallic particle powder having oxide or hydroxide corrosion layers in hexane solvent. The mixture is allowed to react for a time sufficient to etch the oxide or hydroxide groups from the particulate surface and passivate the surfaces with (hfa). Hexane may be evaporated from the mixture and any excess Na(hfa) separated from the reaction mixture by sublimation or rinsing with a polar aprotic solvent. In an embodiment of the present invention, aluminum particles are first etched and passivated and then used to form ohmic contacts with p-type silicon. This etching/passivation improves the electrical properties of the contact.

Direct Printing Of Thin-Film Conductors Using Metal-Chelate Inks

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US Patent:
6830778, Dec 14, 2004
Filed:
Mar 21, 2002
Appl. No.:
10/088760
Inventors:
Douglas L. Schulz - Billerica MA
Calvin J. Curtis - Lakewood CO
David S. Ginley - Evergreen CO
Assignee:
Midwest Research Institute - Kansas City MO
International Classification:
B05D 512
US Classification:
427123, 427125, 427226, 427229
Abstract:
A process for forming an electrical conductor on a substrate is provided, consisting essentially of providing an ink comprised of a metallic chelate, printing directly thereon the ink, and decomposing the ink wherein the metal-chelate is converted to a solid metal conductor on the substrate.

Methods Of Making Copper Selenium Precursor Compositions With A Targeted Copper Selenide Content And Precursor Compositions And Thin Films Resulting Therefrom

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US Patent:
8021641, Sep 20, 2011
Filed:
Feb 4, 2010
Appl. No.:
12/658204
Inventors:
Calvin J. Curtis - Lakewood CO, US
Alexander Miedaner - Boulder CO, US
Marinus Franciscus Antonius Maria van Hest - Lakewood CO, US
David S. Ginley - Evergreen CO, US
Jennifer Leisch - Denver CO, US
Matthew Taylor - West Simsbury CT, US
Billy J. Stanbery - Austin TX, US
Assignee:
Alliance for Sustainable Energy, LLC - Golden CO
Heliovolt Corporation - Austin TX
International Classification:
B05D 3/02
B32B 9/00
C01B 19/04
H01L 31/00
US Classification:
423508, 423509, 4273766, 428689, 136264
Abstract:
Precursor compositions containing copper and selenium suitable for deposition on a substrate to form thin films suitable for semi-conductor applications. Methods of forming the precursor compositions using primary amine solvents and methods of forming the thin films wherein the selection of temperature and duration of heating controls the formation of a targeted species of copper selenide.

Formation Of Copper-Indium-Selenide And/Or Copper-Indium-Gallium-Selenide Films From Indium Selenide And Copper Selenide Precursors

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US Patent:
8057850, Nov 15, 2011
Filed:
Nov 9, 2006
Appl. No.:
11/813474
Inventors:
Calvin J. Curtis - Lakewood CO, US
Alexander Miedaner - Boulder CO, US
Maikel Van Hest - Lakewood CO, US
David S. Ginley - Evergreen CO, US
Jennifer A. Nekuda - Lakewood CO, US
Assignee:
Alliance for Sustainable Energy, LLC - Golden CO
International Classification:
B05D 5/06
B05D 3/02
US Classification:
427 74, 427226
Abstract:
Liquid-based indium selenide and copper selenide precursors, including copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent, are used to form crystalline copper-indium-selenide, and/or copper indium gallium selenide films () on substrates ().

Method For Forming Metal Contacts

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US Patent:
8536049, Sep 17, 2013
Filed:
Oct 14, 2011
Appl. No.:
13/273588
Inventors:
Erik Reddington - Ashland MA, US
Thomas C. Sutter - Holden MA, US
Lujia Bu - Holden MA, US
Alexandra Cannon - Framingham MA, US
Susan E. Habas - Boulder CO, US
Calvin J. Curtis - Lakewood CO, US
Alexander Miedaner - Boulder CO, US
David S. Ginley - Evergreen CO, US
Marinus Franciscus Antonius Maria Van Hest - Lakewood CO, US
Assignee:
Rohm and Haas Electronic Materials LLC - Marlborough MA
Alliance for Sustainable Energy, LLC - Golden CO
International Classification:
H01L 21/4763
US Classification:
438636, 257E21029
Abstract:
Methods of forming metal contacts with metal inks in the manufacture of photovoltaic devices are disclosed. The metal inks are selectively deposited on semiconductor coatings by inkjet and aerosol apparatus. The composite is heated to selective temperatures where the metal inks burn through the coating to form an electrical contact with the semiconductor. Metal layers are then deposited on the electrical contacts by light induced or light assisted plating.

Metal Inks

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US Patent:
8641931, Feb 4, 2014
Filed:
Jun 8, 2012
Appl. No.:
13/492567
Inventors:
David S. Ginley - Evergreen CO, US
Calvin J. Curtis - Lakewood CO, US
Alex Miedaner - Boulder CO, US
Marinus Franciscus Antonius Maria van Hest - Lakewood CO, US
Tatiana Kaydanova - Montreal, CA
Assignee:
Alliance for Sustainable Energy, LLC - Golden CO
International Classification:
H01B 1/12
H01L 31/00
H01L 21/00
US Classification:
2525193, 136256, 438 72
Abstract:
Self-reducing metal inks and systems and methods for producing and using the same are disclosed. In an exemplary embodiment, a method may comprise selecting a metal-organic (MO) precursor, selecting a reducing agent, and dissolving the MO precursor and the reducing agent in an organic solvent to produce a metal ink that remains in a liquid phase at room temperature. Metal inks, including self-reducing and fire-through metal inks, are also disclosed, as are various applications of the metal inks.

Methods For Producing Group Iii Nitride Materials

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US Patent:
20050066878, Mar 31, 2005
Filed:
Sep 25, 2003
Appl. No.:
10/671840
Inventors:
Douglas Arent - Conifer CO, US
Calvin Curtis - Lakewood CO, US
Carl Schwerdtfeger - Chagrin Falls OH, US
International Classification:
C30B001/00
US Classification:
117002000
Abstract:
The present invention provides a method for producing Group III nitride materials by converting a Group III azide of the formula: (RRN)MNunder conditions sufficient to produce a Group III nitride material of the formula: MN wherein

Metal Inks

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US Patent:
20080003364, Jan 3, 2008
Filed:
Jun 28, 2006
Appl. No.:
11/427270
Inventors:
David S. Ginley - Evergreen CO, US
Calvin J. Curtis - Lakewood CO, US
Alex Miedaner - Boulder CO, US
Marinus Franciscus Antonius Maria van Hest - Lakewood CO, US
Tatiana Kaydanova - Lakewood CO, US
International Classification:
B05D 3/00
US Classification:
427276
Abstract:
Self-reducing metal inks and systems and methods for producing and using the same are disclosed. In an exemplary embodiment, a method may comprise selecting a metal-organic (MO) precursor, selecting a reducing agent, and dissolving the MO precursor and the reducing agent in an organic solvent to produce a metal ink that remains in a liquid phase at room temperature. Metal inks, including self-reducing and fire-through metal inks, are also disclosed, as are various applications of the metal inks.
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Calvin Michael Curtis from Denver, CO, age ~41 Get Report