Christopher L Scerbo

20130049200, Feb 28, 2013

Aug 30, 2012

13/598686

Paul R. Besser - Sunnyvale CA, US
Roy A. Carruthers - Stormville NY, US
Christopher P. D'Emic - Ossining NY, US
Christian Lavoie - Pleasantville NY, US
Conal E. Murray - Yorktown Heights NY, US
Kazuya Ohuchi - Kanagawa, JP
Christopher Scerbo - Bronx NY, US
Bin Yang - San Carlos CA, US

International Business Machines Corporation - Armonk NY

H01L 29/43

257741, 257E29146

Silicidation techniques with improved rare earth silicide morphology for fabrication of semiconductor device contacts. For example, a method for forming silicide includes implanting a silicon layer with an amorphizing species to fond an amorphous silicon region in the silicon layer and depositing a rare earth metal film on the silicon layer in contact with the amorphous silicon region. A silicide process is then performed to combine the rare earth metal film and the amorphous silicon region to form a silicide film on the silicon layer.

20130049199, Feb 28, 2013

Aug 31, 2011

13/222469

Paul R. Besser - Sunnyvale CA, US
Roy A. Carruthers - Stormville NY, US
Christopher P. D'Emic - Ossining NY, US
Christian Lavoie - Pleasantville NY, US
Conal E. Murray - Yorktown Heights NY, US
Kazuya Ohuchi - Kanagawa, JP
Christopher Scerbo - Bronx NY, US
Bin Yang - San Carlos CA, US

International Business Machines Corporation - Armonk NY

H01L 23/532
H01L 21/336
H01L 21/768

257741, 438682, 438305, 257E21575, 257E21409, 257E23157

Silicidation techniques with improved rare earth silicide morphology for fabrication of semiconductor device contacts. For example, a method for forming silicide includes implanting a silicon layer with an amorphizing species to form an amorphous silicon region in the silicon layer and depositing a rare earth metal film on the silicon layer in contact with the amorphous silicon region. A suicide process is then performed to combine the rare earth metal film and the amorphous silicon region to form a silicide film on the silicon layer.

20190311945, Oct 10, 2019

Jun 17, 2019

16/443283

- Armonk NY, US
Sebastian U. Engelmann - White Plains NY, US
Marinus Johannes Petrus Hopstaken - Carmel NY, US
Christopher Scerbo - Bronx NY, US
Hongwen Yan - Somers NY, US
Yu Zhu - Yorktown Heights NY, US

H01L 21/768
H01L 21/223
H01L 23/535
H01L 29/66
H01L 29/20
H01L 29/78
H01L 21/285
H01L 21/28

After forming source/drain contact openings to expose portions of source/drain regions composed of an n-doped III-V compound semiconductor material, surfaces of the exposed portions of the source/drain regions are cleaned to remove native oxides and doped with plasma-generated n-type dopant radicals. Semiconductor caps are formed in-situ on the cleaned surfaces of the source/drain regions, and subsequently converted into metal semiconductor alloy regions. Source/drain contacts are then formed on the metal semiconductor alloy regions and within the source/drain contact openings.

20180096885, Apr 5, 2018

Oct 4, 2016

15/284956

- Armonk NY, US
Sebastian U. Engelmann - White Plains NY, US
Marinus Johannes Petrus Hopstaken - Carmel NY, US
Christopher Scerbo - Bronx NY, US
Hongwen Yan - Somers NY, US
Yu Zhu - West Harrison NY, US

H01L 21/768
H01L 23/535
H01L 29/08
H01L 29/20
H01L 29/207
H01L 29/66
H01L 21/02

After forming source/drain contact openings to expose portions of source/drain regions composed of an n-doped III-V compound semiconductor material, surfaces of the exposed portions of the source/drain regions are cleaned to remove native oxides and doped with plasma-generated n-type dopant radicals. Semiconductor caps are formed in-situ on the cleaned surfaces of the source/drain regions, and subsequently converted into metal semiconductor alloy regions. Source/drain contacts are then formed on the metal semiconductor alloy regions and within the source/drain contact openings.

20170373149, Dec 28, 2017

Jun 28, 2016

15/195107

- Armonk NY, US
Kevin K. Chan - Staten Island NY, US
Sebastian U. Engelmann - White Plains NY, US
Renee T. Mo - Yorktown Heights NY, US
Christopher Scerbo - Bronx NY, US
Hongwen Yan - Somers NY, US
Jeng-Bang Yau - Yorktown Heights NY, US

H01L 29/10
H01L 21/223
H01L 21/02
H01L 29/78
H01L 29/207

A method for forming an overlap transistor includes forming a gate structure over a III-V material, wet cleaning the III-V material on side regions adjacent to the gate structure and plasma cleaning the III-V material on the side regions adjacent to the gate structure. The III-V material is plasma doped on the side regions adjacent to the gate structure to form plasma doped extension regions that partially extend below the gate structure.