Chuming D Shih

7158386, Jan 2, 2007

May 8, 2003

10/431688

Chuming David Shih - Chandler AZ, US
Ahmad Khanifar - Laguna Hills CA, US
Nikolai Maslennikov - Huntington Beach CA, US
Richard Sweeney - Rancho Santa Margarita CA, US

Powerwave Technologies, Inc. - Santa Ana CA
Freescale Semiconductor, Inc. - Austin TX

H05K 7/02

361760, 330295

A radio frequency power amplifier has first and second amplifier transistors. The first and second amplifier transistors have a common element thereof electrically interconnected with a common bus. A forked conductor having two legs thereof electrically connected to the common bus, each leg having a distal end proximate one of the first and second amplifier transistors. The common bus and the forked conductor are generally symmetric about an axis about which the first and second amplifier transistors are symmetrically disposed.

20130037924, Feb 14, 2013

Aug 8, 2012

13/570077

Jong-Hoon Lee - Bedford MA, US
Chuming Shih - Acton MA, US

SKYWORKS SOLUTIONS, INC. - Woburn MA

H01L 27/12
H01L 21/98
H01L 23/66

257664, 438123, 257E23002, 257E27112, 257E21705

Antenna switch modules and methods of making the same are provided. In certain implementations, an antenna switch module includes a package substrate, an integrated filter, and a silicon on insulator (SOI) die attached to the package substrate. The SOI die includes a capacitor configured to operate in the integrated filter and a multi throw switch for selecting amongst the RF signal paths. In some implementations, a surface mount inductor is attached to the package substrate adjacent the SOI die and is configured to operate in the integrated filter with the capacitor. In certain implementations, the inductor is formed from a conductive layer of the package substrate disposed beneath a layer of the package substrate used to attach the SOI die.

20140009213, Jan 9, 2014

Jul 6, 2013

13/936179

Mengshu Hsu - Bedford MA, US
Chuming Shih - Chandler AZ, US
Jong-Hoon Lee - San Jose CA, US

H03K 17/16

327427, 438382

Radio-frequency (RF) switch circuits are disclosed having one or more transistors coupled to provide improved harmonic management. The RF switch circuits including at least one field-effect transistor (FET) disposed between first and second nodes, each of the at least one FET having a respective body and gate. A coupling circuit can be configured to couple the respective body and gate of each of the at least one FET. The coupling circuit can include a capacitor electrically parallel with a diode.

20140009214, Jan 9, 2014

Jul 6, 2013

13/936180

Guillaume Alexandre Blin - Carlisle MA, US
Haki Cebi - Allston MA, US
Hanching Fuh - Allston MA, US
Mengshu Hsu - Bedford MA, US
Jong-Hoon Lee - San Jose CA, US
Anuj Madan - Cambridge MA, US
Nuttapong Srirattana - Billerica MA, US
Chuming Shih - Chandler AZ, US
Steven Christopher Sprinkle - Hampstead NH, US

H03K 17/16
H01L 21/8234

327427, 438197

Radio-frequency (RF) switch circuits are disclosed providing improved switching performance. An RF switch system includes a plurality of field-effect transistors (FETs) connected in series between first and second nodes, each FET having a gate and a body. A compensation network including a gate-coupling circuit couples the gates of each pair of neighboring FETs. The compensation network may further including a body-coupling circuit that couples the bodies of each pair of neighboring FETs.

6492874, Dec 10, 2002

Jul 30, 2001

09/918015

Chuming David Shih - Chandler AZ

Motorola, Inc. - Schaumburg IL

H03F 304

330288, 330289, 330296

An active bias circuit connected to a power amplifier PA maintains a power amplifier DC quiescent current at a fixed value over a wide temperature range. The active bias circuit includes first and second current mirror circuits. The power amplifier PA is an element of the second current mirror circuit. A temperature compensation circuit is connected to the first current mirror circuit for providing temperature compensation therewith. A first reference voltage source is connected to the first current mirror circuit by way of the temperature compensation circuit for providing a first reference voltage Vref to the first current mirror circuit. A current sink is connected to a transistor of the first current mirror circuit and a voltage source adjustment circuit is connected to the first current mirror circuit for setting a voltage provided to the first current mirror circuit.