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Daniel J Aiken

from Cedar Crest, NM
Age ~54
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Also known as:
Daniel James Aiken, Daniel A Aiken, Daniel L Aiken, Dj Aiken, Aiken Aiken, Aiken Dj
Phone and address:
14 Puesta Del Sol, Cedar Crest, NM 87008
Related to:
Barbara T Marabella, 80Leah Schwartz, 72Timothy D Torrey, 73Cheryl Schwartz, 70Carrie B Schwartz, 49John C Marabella, 57Danielle S Brennan, 46Bruce A Schwartz, 62Michael A Schwartz, 73
Connected to:
Alisha C Aiken, 40Anita L Aiken, 44Cathy A Aiken, 59Connie L Aiken, 68Connor J Aiken, 66Felicia A Aiken, 35Ian D Aiken, 60Kristie M Aiken, 49Krystal Aiken, 57Marileen N Aiken, 55

Daniel Aiken Phones & Addresses

  • 14 Puesta Del Sol, Cedar Crest, NM 87008
  • 13 Mulberry Ct, Cedar Crest, NM 87008 (505) 286-2440
  • Albuquerque, NM
  • 267 Raven Rd, Tijeras, NM 87059
  • Newark, DE
  • Bear, DE
  • Bernalillo, NM

Work

Company: Faegre Drinker Biddle & Reath LLP Address:

Specialities

Labor & Employment • Competitive Advantage, Trade Secret & Computer Fraud & Abuse • Retail

Professional Records

Lawyers & Attorneys

Daniel Aiken Photo 1

Daniel Aiken - Lawyer

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Office:
Faegre Drinker Biddle & Reath LLP
Specialties:
Labor & Employment
Competitive Advantage, Trade Secret & Computer Fraud & Abuse
Retail
ISLN:
918393584
Admitted:
2004
University:
Philadelphia University, B.S., 2000
Law School:
Rutgers University School of Law - Camden, J.D., 2004

License Records

Daniel L Aiken

License #:
5364 - Active
Category:
Mechanical
Issued Date:
Apr 22, 2016
Expiration Date:
Mar 31, 2019
Type:
Apprentice Plumber

Daniel L Aiken

License #:
GFT1608547 - Active
Category:
Mechanical
Expiration Date:
Mar 31, 2019
Type:
Fuel Gas Fitting Trainee

Daniel L Aiken

License #:
5364 - Active
Category:
Mechanical
Issued Date:
Apr 22, 2016
Expiration Date:
Mar 31, 2019
Type:
Apprentice Plumber

Daniel L Aiken

License #:
GFT1608547 - Active
Category:
Mechanical
Type:
Fuel Gas Fitting Trainee

Resumes

Resumes

Daniel Aiken Photo 2

Solar Cell Product Line Manager At Emcore

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Position:
Solar Cell Product Line Manager at Emcore
Location:
Albuquerque, New Mexico Area
Industry:
Semiconductors
Work:
Emcore - Albuquerque, New Mexico Area since Sep 2000
Solar Cell Product Line Manager
Sandia National Laboratories Nov 1998 - Sep 2000
Post Doctorate
Astropower, Inc. Apr 1997 - Oct 1998
Researcher
Education:
University of Delaware 1995 - 1998
Ph.D., Electrical Engineering University of Delaware 1992 - 1995
M.S., Electrical Engineering State University of New York at Buffalo 1987 - 1992
BS, Electrical Engineering
Skills:
Product Engineering
Semiconductor Manufacturing
Engineering Management
Solar Cells
Product Development
Product Management
Photovoltaics
Electrical Engineering
Semiconductors
Semiconductor Industry
Compound Semiconductor Devices
Honor & Awards:
Eta Kappa Nu and Tau Beta Pi Engineering Honor Societies Phi Eta Sigma Honor Society Sandia National Labs Outstanding Performance Award, 1999 Sandia National Labs Individual Performance Award, 2000 Invited Speaker, SPIE Optics and Photonics, San Diego CA, 2008 Invited Speaker, International Conference on Solar Concentrators for the Generation of Electricity ICSC–5, Palm Desert, CA, 2005 Invited Speaker and Panelist, Solar Power International, San Diego, CA, 2008 Conference session chair, 33rd IEEE PVSC 2008, Palm Desert, 22nd EU PVSEC Milan 2007, CPV-6 Freiburg, Germany
Daniel Aiken Photo 3

Daniel Aiken

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Location:
United States
Daniel Aiken Photo 4

Daniel Aiken

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Location:
United States
Daniel Aiken Photo 5

Daniel Aiken

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Location:
United States

Business Records

Name / Title
Company / Classification
Phones & Addresses
Daniel B. Aiken
Vice-President
AMERICAN GENERAL FINANCE INC
PO Box 59, Evansville, IN 47701
1209 Orange St, Wilmington, DE 19801
601 NW 2 St, Evansville, IN 47701
Daniel B. Aiken
AMERICAN GENERAL FINANCE, INC
1209 Orange St, Wilmington, DE 19801
601 NW 2 St, Evansville, IN 47701

Publications

Amazon

Donelson & Hermitage, Tennessee: A Suburban History

Donelson & Hermitage, Tennessee: A Suburban History

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The year 1963 had a lasting impact on the areas of eastern Davidson county known as Donelson and Hermitage, Tennessee. Prior to their incorporation into the metropolitan government of Nashville, these sleepy farming communities had seen little change since their settlement by early pioneers. But the...
Author

Scott Daniel Aiken, James Bruce Stanley

Binding

Hardcover

Pages

512

Publisher

Hillsboro Press

ISBN #

157736287X

EAN Code

9781577362876

ISBN #

1

Donelson & Hermitage, Tennessee: A Suburban History By Scott Daniel Aiken (January 26,2004)

Donelson & Hermitage, Tennessee: A Suburban History by Scott Daniel Aiken (January 26,2004)

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Author

Scott Daniel Aiken;James Bruce Stanley

Binding

Hardcover

Publisher

Hillsboro Press (January 26,2004)

ISBN #

9

Us Patents

Method And Apparatus Of Multiplejunction Solar Cell Structure With High Band Gap Heterojunction Middle Cell

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US Patent:
7071407, Jul 4, 2006
Filed:
Oct 31, 2002
Appl. No.:
10/285780
Inventors:
Daniel J. Aiken - Cedar Crest NM, US
Mark A. Stan - Albuquerque NM, US
Assignee:
Emcore Corporation - Somerset NJ
International Classification:
H01L 31/68
US Classification:
136262, 136255, 257 96, 257 97
Abstract:
A method and a multijunction solar device having a high band gap heterojunction middle solar cell are disclosed. In one embodiment, a triple-junction solar device includes bottom, middle, and top cells. The bottom cell has a germanium (Ge) substrate and a buffer layer, wherein the buffer layer is disposed over the Ge substrate. The middle cell contains a heterojunction structure, which further includes an emitter layer and a base layer that are disposed over the bottom cell. The top cell contains an emitter layer and a base layer disposed over the middle cell.

Terrestrial Solar Array

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US Patent:
7381886, Jun 3, 2008
Filed:
Jul 30, 2007
Appl. No.:
11/830636
Inventors:
Daniel J. Aiken - Cedar Crest NM, US
Gary Hering - Belle Mead NJ, US
Earl Fuller - Albuquerque NM, US
Assignee:
Emcore Corporation - Albuquerque NM
International Classification:
H01L 31/0232
US Classification:
136246, 136255
Abstract:
A concentrator photovoltaic solar cell array for terrestrial use for generating electrical power from solar radiation including a central support which is rotatable about its central longitudinal axis, a support frame carried by, and rotatable with respect to, the central support about an axis orthogonal to said central longitudinal axis, and a solar array mounted on the support frame. The solar cell array includes a plurality of Fresnel concentrator lenses and multijunction III-V compound semiconductor solar cells each producing in excess of 10 watts of DC power. An actuator is provided for rotating the central support and the support frame so that the solar cell array is maintained substantially orthogonal to the rays of the sun as the sun traverses the sky.

Method And Apparatus Of Multiplejunction Solar Cell Structure With High Band Gap Heterojunction Middle Cell

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US Patent:
7553691, Jun 30, 2009
Filed:
Apr 26, 2005
Appl. No.:
11/114454
Inventors:
Navid Fatemi - Albuquerque NM, US
Daniel J. Aiken - Cedar Crest NM, US
Mark A. Stan - Albuquerque NM, US
Assignee:
Emcore Solar Power, Inc. - Albuquerque NM
International Classification:
H01L 21/00
H01L 25/00
US Classification:
438 94, 438 47, 438172, 438191, 438235, 257 51, 257 94, 257200, 257E33032, 257E33033, 136206, 136249, 136254, 136255, 136262
Abstract:
A method and a multijunction solar device having a high band gap heterojunction middle solar cell are disclosed. In one embodiment, a triple-junction solar device includes bottom, middle, and top cells. The bottom cell has a germanium (Ge) substrate and a buffer layer, wherein the buffer layer is disposed over the Ge substrate. The middle cell contains a heterojunction structure, which further includes an emitter layer and a base layer that are disposed over the bottom cell. The top cell contains an emitter layer and a base layer disposed over the middle cell.

Method Of Fabricating A Multijunction Solar Cell With A Bypass Diode Having An Intrinsic Layer

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US Patent:
7592538, Sep 22, 2009
Filed:
May 6, 2005
Appl. No.:
11/058595
Inventors:
Paul R. Sharps - Albuquerque NM, US
Daniel J. Aiken - Cedar Crest NM, US
Doug Collins - Albuquerque NM, US
Mark A. Stan - Albuquerque NM, US
Assignee:
Emcore Solar Power, Inc. - Albuquerque NM
International Classification:
H01L 31/00
US Classification:
136255, 136262
Abstract:
A method of making a multijunction solar cell, including first and second solar cells on a substrate with a bypass diode having an intrinsic layer and operative for passing current when the multijunction solar cell is shaded. In one embodiment, a vertical sequence of solar cells are epitaxially grown on a first portion of the substrate, and the layers of the diode are epitaxially grown on a second portion of the substrate with the layers of the bypass diode being deposited subsequent to the layers of the top solar cell.

Method Of Forming A Multijunction Solar Cell Structure With A Gaas/Aigaas Tunnel Diode

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US Patent:
7709287, May 4, 2010
Filed:
Apr 10, 2006
Appl. No.:
11/401720
Inventors:
Navid Fatemi - Albuquerque NM, US
Daniel J. Aiken - Cedar Crest NM, US
Mark A. Stan - Albuquerque NM, US
Assignee:
Emcore Solar Power, Inc. - Albuquerque NM
International Classification:
H01L 21/00
H01L 31/00
H01L 31/04
US Classification:
438 94, 438 74, 438 93, 438235, 438312, 257 12, 257 96, 257 97, 257E21101, 257E21102, 257E33032, 257E33033, 257E33034, 136249, 136256, 136261, 136262
Abstract:
A method of forming a multijunction solar cell includes providing a substrate, forming a first subcell by depositing a nucleation layer over the substrate and a buffer layer including gallium arsenide (GaAs) over the nucleation layer, forming a middle second subcell having a heterojunction base and emitter disposed over the first subcell and forming first and second tunnel junction layers between the first and second subcells. The first tunnel junction layer includes GaAs over the first subcell and the second tunnel junction layer includes aluminum gallium arsenide (AlGaAs) over the first tunnel junction layer. The method further includes forming a third subcell having a homojunction base and emitter disposed over the middle subcell.

Multijunction Solar Cell With A Bypass Diode Having An Intrinsic Layer

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US Patent:
7759572, Jul 20, 2010
Filed:
Feb 6, 2004
Appl. No.:
10/773343
Inventors:
Paul R. Sharps - Albuquerque NM, US
Daniel J. Aiken - Cedar Crest NM, US
Doug Collins - Albuquerque NM, US
Mark A. Stan - Albuquerque NM, US
Assignee:
Emcore Solar Power, Inc. - Albuquerque NM
International Classification:
H01L 31/00
US Classification:
136255, 136256
Abstract:
A multijunction solar cell including first and second solar cells on a substrate with an integral bypass diode having an intrinsic layer and operative for passing current when the multijunction solar cell is shaded. In one embodiment, a vertical sequence of solar cells are epitaxially grown on a first portion of the substrate, and the layers of the diode are epitaxially grown on a second portion of the substrate with the layers of the bypass diode being deposited subsequent to the layers of the top solar cell.

Apparatus And Method For Integral Bypass Diode In Solar Cells

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US Patent:
20030140962, Jul 31, 2003
Filed:
Oct 24, 2002
Appl. No.:
10/280593
Inventors:
Paul Sharps - Albuquerque NM, US
Daniel Aiken - Cedar Crest NM, US
Doug Collins - Albuquerque NM, US
Mark Stan - Albuquerque NM, US
International Classification:
H01L031/00
US Classification:
136/249000, 136/255000, 438/074000
Abstract:
A solar cell having a multijunction solar cell structure with a bypass diode is disclosed. The bypass diode provides a reverse bias protection for the multijunction solar cell structure. In one embodiment, the multifunction solar cell structure includes a substrate, a bottom cell, a middle cell, a top cell, a bypass diode, a lateral conduction layer, and a shunt. The lateral conduction layer is deposited over the top cell. The bypass diode is deposited over the lateral conduction layer. One side of the shunt is connected to the substrate and another side of the shunt is connected to the lateral conduction layer. In another embodiment, the bypass diode contains an i-layer to enhance the diode performance.

Solar Cell Mechanical Interconnection Using Direct Wafer Bonding

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US Patent:
20050161078, Jul 28, 2005
Filed:
Jan 27, 2004
Appl. No.:
10/765532
Inventors:
Daniel Aiken - Cedar Crest NM, US
International Classification:
H01L031/00
US Classification:
136259000, 136255000
Abstract:
A multi-junction solar cell includes a plurality of monolithic cells joined together by direct wafer bonds. Each monolithic cell has at least one junction. The direct wafer bonds include no intervening material between joined monolithic cells. The direct wafer bonds are achieved by bonding forces between dipoles at the surfaces of adjoining monolithic cells.
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Daniel J Aiken from Cedar Crest, NM, age ~54 Get Report