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Darryl Kevin Angelo

from Sunnyvale, CA
Age ~52
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Also known as:
Darryl K Angelo, Darrly Angelo, Daryl Angelo, Angelo Darryl Te, Angelo Darryl Priyadarshini, Angelo D Kevin
Phone and address:
1127 Reinclaud Ct, Sunnyvale, CA 94087
(408) 732-8637
Related to:
Vanessa Gross Marino, 43Priya Angelo, 51Yong S Kim, 34Kalyanasun Kodalapuram, 86Louanna M Angelo, 74Kim J Angelo, 46Louanna AngeloCraig G Angelo, 36Jungok KimHector B AngeloLouanna M Angelo, 66Angelo Radley, 32Una A AngeloKwang W Kim, 46Keith A Angelo, 68Ye E KimBrandon K Angelo, 36
Connected to:
Angelica O Angelo, 34Christy L Angelo, 43Deb D AngeloJenna M Angelo, 36Marty AngeloNoel Angelo, 52Perez B Angelo, 66Shari A Angelo, 61Susana Angelo, 58Timothy P Angelo, 44

Darryl Angelo Phones & Addresses

  • 1127 Reinclaud Ct, Sunnyvale, CA 94087 (408) 732-8637
  • 1370 Calabazas Blvd, Santa Clara, CA 95051 (408) 261-1924
  • Bedminster, NJ
  • Austin, TX
  • Tempe, AZ

Work

Company: Lam research Feb 2020 Position: Senior director

Education

Degree: Masters, Master of Science In Electrical Engineering School / High School: The University of Texas at Austin 1994 to 1996 Specialities: Engineering

Skills

Research • San • Semiconductors

Industries

Semiconductors

Resumes

Resumes

Darryl Angelo Photo 1

Senior Director

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Location:
1176 east Erie St, Gilbert, AZ 85295
Industry:
Semiconductors
Work:
Lam Research
Senior Director
Applied Materials Aug 1996 - Oct 2010
Senior Product Manager
Education:
The University of Texas at Austin 1994 - 1996
Masters, Master of Science In Electrical Engineering, Engineering Manipal Academy of Higher Education 1989 - 1993
Bachelors, Bachelor of Science In Electrical Engineering, Communication, Electronics
Skills:
Research
San
Semiconductors

Publications

Us Patents

Pressure Modulation Method To Obtain Improved Step Coverage Of Seed Layer

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US Patent:
6458251, Oct 1, 2002
Filed:
Nov 16, 1999
Appl. No.:
09/440679
Inventors:
Arvind Sundarrajan - Santa Clara CA
Darryl Angelo - Sunnyvale CA
Peijun Ding - San Jose CA
Barry Chin - Saratoga CA
Imran Hasim - San Jose CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 1432
US Classification:
20419212, 20419215, 20419213, 20429806, 20429807
Abstract:
A multi-step process for the deposition of a material into high aspect ratio features on a substrate surface is provided. The process involves depositing a material on the substrate at a first pressure for a first period of time and then depositing the material on the substrate at a second pressure for a second period of time. Modulation of the pressure influences the ionization and trajectory of the particles, which are ionized in a plasma environment. The method of the invention in one aspect allows for optimum deposition at the bottom of a high aspect ratio feature during a high pressure step and increased deposition on the sidewalls of the feature during at least a low pressure step.

Temperature Control Of A Substrate

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US Patent:
6607640, Aug 19, 2003
Filed:
Mar 29, 2000
Appl. No.:
09/538343
Inventors:
Arvind Sundarrajan - Santa Clara CA
Darryl Angelo - Santa Clara CA
Peijun Ding - San Jose CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 1434
US Classification:
20419215
Abstract:
A method of improving the temperature control of a clamped substrate mounted on a substrate support that is biased, the substrate support having a passage therethrough to permit a flow of backside gas for heating or cooling the substrate, whereby the pressure of the backside gas is maintained at at least 15 torr. A high gas pressure improves the thickness uniformity of processing across the substrate. For plasma deposition of sputtered seed layers, the morphology of the seed layer is improved near the edge of the substrate and the uniformity of the layer across the substrate is also improved.

Pressure Modulation Method To Obtain Improved Step Coverage Of Seed Layer

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US Patent:
20030066747, Apr 10, 2003
Filed:
Sep 30, 2002
Appl. No.:
10/262652
Inventors:
Arvind Sundarrajan - Santa Clara CA, US
Darryl Angelo - Sunnyvale CA, US
Barry Chin - Saratoga CA, US
Imran Hasim - San Jose CA, US
Assignee:
Applied Materials, Inc.
International Classification:
C23C014/32
C23C014/00
US Classification:
204/192120, 204/192150, 204/192130, 204/298060, 204/298070
Abstract:
A multi-step process for the deposition of a material into high aspect ratio features on a substrate surface is provided. The process involves depositing a material on the substrate at a first pressure for a first period of time and then depositing the material on the substrate at a second pressure for a second period of time. Modulation of the pressure influences the ionization and trajectory of the particles, which are ionized in a plasma environment. The method of the invention in one aspect allows for optimum deposition at the bottom of a high aspect ratio feature during a high pressure step and increased deposition on the sidewalls of the feature during at least a low pressure step.

Self-Ionized And Inductively-Coupled Plasma For Sputtering And Resputtering

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US Patent:
20030116427, Jun 26, 2003
Filed:
Jul 25, 2002
Appl. No.:
10/202778
Inventors:
Peijun Ding - San Jose CA, US
Zheng Xu - Foster City CA, US
Roderick Mosely - Pleasanton CA, US
Suraj Rengarajan - San Jose CA, US
Nirmalya Maity - Los Altos CA, US
Daniel Carl - Pleasanton CA, US
Barry Chin - Saratoga CA, US
Paul Smith - San Jose CA, US
Darryl Angelo - Sunnyvale CA, US
Anish Tolia - San Jose CA, US
Jianming Fu - Palo Alto CA, US
Fusen Chen - Cupertino CA, US
Praburam Gopalraja - San Jose CA, US
Xianmin Tang - San Jose CA, US
John Forster - San Francisco CA, US
Assignee:
Applied Materials, Inc.
International Classification:
C23C014/32
C23C014/34
US Classification:
204/192170, 204/192120, 204/192150, 204/298060, 204/298080, 204/298190, 204/298200, 204/192110, 204/298250
Abstract:
A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same chamber. Also, bottom coverage may be thinned or eliminated by ICP resputtering. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering.

Method And Apparatus For Sputter Deposition

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US Patent:
20030216035, Nov 20, 2003
Filed:
May 14, 2003
Appl. No.:
10/439021
Inventors:
Suraj Rengarajan - San Jose CA, US
Michael Miller - Sunnyvale CA, US
Darryl Angelo - Sunnyvale CA, US
Nirmalya Maity - San Jose CA, US
Peijun Ding - San Jose CA, US
Assignee:
Applied Materials, Inc.
International Classification:
C23C014/00
C23C014/32
H01L021/4763
US Classification:
438/637000, 204/192170
Abstract:
A physical vapor deposition chamber is employed to sputter-deposit a layer of material, such as a tantalum or tantalum nitride barrier layer, in a via formed on a semiconductor substrate. After the sputter-deposition step, a second processing step is performed in which material from the barrier layer is back-sputtered from the bottom wall of the via. The second step is performed at a high pedestal bias and with substantial power applied to the sputtering target. The power applied to the sputtering target in the second step may be at a higher level than the power applied to the sputtering target in the first step. Numerous other aspects are provided.

Contaminant Reducing Substrate Transport And Support System

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US Patent:
20050252454, Nov 17, 2005
Filed:
Feb 23, 2005
Appl. No.:
11/065702
Inventors:
Vijay Parkhe - San Jose CA, US
Matthew Leopold - Ithaca NY, US
Timothy Ronan - San Jose CA, US
Todd Martin - Mountain View CA, US
Edward Ng - San Jose CA, US
Nitin Khurana - Milpitas CA, US
Song-Moon Suh - Sunnyvale CA, US
Richard Fay - San Jose CA, US
Christopher Hagerty - Aptos CA, US
Michael Rice - Pleasanton CA, US
Darryl Angelo - Sunnyvale CA, US
Kurt Ahman - San Jose CA, US
Matthew Tsai - Cupertino CA, US
Steve Sansoni - Livermore CA, US
International Classification:
C23C016/00
US Classification:
118729000
Abstract:
A lifting assembly can lift a substrate from a substrate support and transport the substrate. The lift assembly has a hoop sized to fit about a periphery of the substrate support, and a pair of arcuate fins mounted on the hoop, each arcuate fin comprising a pair of opposing ends having ledges that extend radially inward, each ledge having a raised protrusion to lift a substrate so that the substrate contacts substantially only the raised protrusion, thereby minimizing contact with the ledge, when the pair of fins is used to lift the substrate off the substrate support. The lifting assembly and other process chamber components can have a diamond-like coating having interlinked networks of (i) carbon and hydrogen, and (ii) silicon and oxygen. The diamond-like coating has a contact surface having a coefficient of friction of less than about 0.3, a hardness of at least about 8 GPa, and a metal concentration level of less than about 5×10atoms/cmof metal. The contact surface reduces contamination of a substrate when directly or indirectly contacting a substrate.

Substrate Support Components Having Quartz Contact Tips

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US Patent:
20080105201, May 8, 2008
Filed:
Oct 29, 2007
Appl. No.:
11/927120
Inventors:
TIMOTHY RONAN - San Jose CA, US
Yuanhong Guo - San Jose CA, US
Robert Decottignies - Redwood City CA, US
Todd W. Martin - Mountain View CA, US
Darryl K. Angelo - Sunnyvale CA, US
Song-Moon Suh - San Jose CA, US
Nitin Khurana - Milpitas CA, US
Edward Ng - San Jose CA, US
International Classification:
B05C 13/00
US Classification:
118500
Abstract:
A support component comprises a support structure having a support surface with one or more quartz contact tips. In one version, the support component comprises a robot blade capable of transferring a substrate into and out of a chamber. The robot blade comprises a plate having a plurality of raised mesas, each raised mesa comprising a quartz contact tip which minimizes contact with the substrate thereby generating fewer contaminant particles during substrate transportation. Other versions of the support component include a heat exchange pedestal, lift pin assembly, and lifting fin assembly.

Methods And Apparatus For Ionized Metal Plasma Copper Deposition With Enhanced In-Film Particle Performance

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US Patent:
6235163, May 22, 2001
Filed:
Jul 9, 1999
Appl. No.:
9/350556
Inventors:
Darryl Angelo - Sunnyvale CA
Arvind Sundarrajan - Santa Clara CA
Peijun Ding - San Jose CA
James H. Tsung - San Jose CA
Ilyoung R. Hong - San Jose CA
Barry Chin - Saratoga CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 1434
US Classification:
20419212
Abstract:
An improved system for performing plasma enhanced PVD of copper, aluminum, tungsten or other metallic material is disclosed. The system has markedly improved performance in the critical area of unwanted in-film particle deposits. The improved performance is provided by lowering the operating temperature of the RF coil used in the plasma enhanced PVD system and by carefully smoothing the outer surface of the RF coil. High conductivity material in the coil supports, increased contact area between the coil supports and the RF coil, and the use of active cooling of the coil further enhance the performance of the system.
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Darryl Kevin Angelo from Sunnyvale, CA, age ~52 Get Report