David D Awschalom

6879012, Apr 12, 2005

Jun 23, 2003

10/602537

Hongxing Tang - Pasadena CA, US
Michael L. Roukes - Pasadena CA, US
Roland K. Kawakami - Riverside CA, US
David D. Awschalom - Santa Barbara CA, US

The Regents of the University of California - Oakland CA
California Institute of Technology - Pasadena CA

H01L029/82

257421, 257425, 257427, 257 48, 257609, 257615

Ferromagnetic semiconductor-based compositions, systems and methods that enable studies of the dynamics and magnetoresistance of individual magnetic domain walls, and which provide enhanced magnetic switching effects relative to metallic ferromagnets. Aspects of the present invention are enabled by recent studies of the Giant Planar Hall effect (GPHE), and in particular GPHE in (Ga,Mn)As—based devices. The GPHE generally originates from macro- and micromagnetic phenomena involving single domain reversals. The GPHE-induced resistance change in multiterminal, micron-scale structures patterned from (Ga,Mn)As can be as large as about 100Ω, four orders of magnitude greater than analogous effects previously observed in metallic ferromagnets. Accordingly, recent data provide sufficient resolution to enable real-time observations of the nucleation and field-induced propagation of individual magnetic domain walls within such monocrystalline devices. The magnitude of the GPHE is generally size-independent down to the submicron scale indicating that for applications involving nanostructures it is capable of sensitivity comparable to SQUID-based techniques.

7667995, Feb 23, 2010

Feb 9, 2006

11/352387

Michael N. Leuenberger - Oviedo FL, US
David D. Awschalom - Santa Barbara CA, US

University of Iowa Research Foundation - Iowa City IA
The Regents of the University of California - Oakland CA

G11C 13/00

365106, 977708, 977933, 398 40, 398158

A method for creating a logic state for teleporting quantum information using a single photon is described. The method includes receiving a photon with an initial polarization and causing a first semiconductor crystal to have a first spin orientation. The photon interacts with the first semiconductor crystal for producing a resulting polarization dependent upon the first spin orientation. Causing the photon to interact with the first semiconductor crystal generates a maximally entangled state.

7719071, May 18, 2010

May 26, 2004

10/854022

Zhi Gang Yu - Mountain View CA, US
David Awschalom - Santa Barbara CA, US

University of iowa Research Foundation - Iowa City IA

H01L 47/02

257427, 257E43001, 257E29167, 257E29323

A bipolar spin transistor is provided. In one embodiment of the present invention, the bipolar spin transistor includes a first semiconductor region having a first conductivity type, a second semiconductor region having a second conductivity type that is different from the first conductivity type and also having a spin polarization, and a third semiconductor region having a conductivity type that is the same conductivity type of the first semiconductor region. The first semiconductor region and the second semiconductor region are adjacent to each other so as to form a first charge depletion layer therebetween, the first charge depletion layer having a first side facing the first semiconductor region and an opposing second side facing the second semiconductor region. Additionally, the second semiconductor region and the third semiconductor region are adjacent to each other so as to form a second charge depletion layer therebetween, the second charge depletion layer having a first side facing the second semiconductor region and an opposing second side facing the third semiconductor region.

63072416, Oct 23, 2001

Jun 7, 1995

8/475235

David D. Awschalom - Santa Barbara CA
Pierre M. Petroff - Santa Barbara CA
Jing Shi - Goleta CA
James M. Kikkawa - Santa Barbara CA

The Regents of the Unversity of California - Oakland CA

H01L 2982

257421

Submicron ferromagnets, of selected size and spacing, are introduced into semiconductor by means of ion implantation and subsequent heat treatments. The resulting semiconductor contains ferromagnets at high density and which exhibit Curie temperatures exceeding room temperature. The semiconductor retains its intrinsic physical properties, such as optical and transport properties, after incorporation of the ferromagnetic nanostructures.

20220179284, Jun 9, 2022

Mar 13, 2020

17/438600

- Chicago IL, US
Christopher P. Anderson - Chicago IL, US
David D. Awschalom - Chicago IL, US

The University of Chicago - Chicago IL

G02F 3/02
H01L 39/10
H01L 39/22

This disclosure relates to optical devices for quantum information processing applications. In one example implementation, a semiconductor structure is provided. The semiconductor structure may be embedded with single defects that can be individually addressed. An electric bias and/or one or more optical excitations may be configured to control the single defects in the semiconductor structure to produce single photons for use in quantum information processing. The electric bias and optical excitations are selected and adjusted to control various carrier processes and to reduce environmental charge instability of the single defects to achieve optical emission with wide wavelength tunability and narrow spectral linewidth. Electrically controlled single photon source and other electro-optical devices may be achieved.

20200400723, Dec 24, 2020

Feb 13, 2019

16/968471

- Chicago IL, US
Samuel James Whiteley - Los Gatos CA, US
David Daniel Awschalom - Chicago IL, US

The University of Chicago - Chicago IL

G01R 15/24

Methods and systems are disclosed for sensing an environment electric field. In one exemplary implementation, a method includes disposing a sensor in the environment, wherein the sensor comprising a crystalline lattice and at least one optically-active defect in the crystalline lattice; pre-exciting the crystalline lattice to prepare at least one defect in a first charge state using a first optical beam at a first optical wavelength; converting at least one defect from the first charge state to a second charge state using a second optical beam at a second optical wavelength; monitoring a characteristics of photoluminescence emitted from the defect during or after the conversion of the at least one defect from the first charge state to the second charge state; and determining a characteristics of the electric field in the environment according to the monitored characteristics of the photoluminescence.

20170261835, Sep 14, 2017

Mar 13, 2017

15/457619

- Chicago IL, US
David Awschalom - Chicago IL, US

G02F 3/00
G06N 99/00
G02F 1/00

Methods and devices are disclosed for implementing quantum information processing based on electron spins in semiconductor and transition metal compositions. The transition metal electron orbitals split under semiconductor crystal field. The electron ground states are used as qubits. The transitions between the ground states involve electron spin flip. The semiconductor and transition metal compositions may be further included in optical cavities to facilitate quantum information processing. Quantum logic operations may be performed using single color or two color coherent resonant optical excitations via an excited electron state.