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David J Deshazer

from Verona, NJ
Age ~47
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Also known as:
David Deshazer, David James Deshazer, Dave Deshazer, David Deshaner, David R
Related to:
Louis A Vanmeter, 75Jennifer L Deshazer, 48Carol R Couture, 69Alice B Deshazer, 79Velma M De ShazerLaura Ann Peterson, 62Jennifer L Vanderford, 45Jeffrey A Vanmeter, 52Linda J Vanmeter, 74James A Deshazer, 84
Connected to:
Jonathan L Deshazer, 50Laura H Deshazer, 70Tyler R Deshazer, 40Amanda L DeshazoJessica W Deshazor, 42Lyn Deshazo, 63Terry R Deshazo, 61Dean H Desherlia, 46Audrey Deshields, 82Billy Deshields, 59

David Deshazer Phones & Addresses

  • Verona, NJ
  • Atlanta, GA
  • 3400 Dean Dr, Hyattsville, MD 20782 (301) 853-3388
  • Bay City, MI
  • 819 Nylarol St, Moscow, ID 83843 (208) 882-1500
  • 1304 6Th St, Bay City, MI 48708 (989) 225-2443

Resumes

Resumes

David Deshazer Photo 1

David Deshazer

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Location:
Saginaw und Umgebung, Michigan
Industry:
Chemie
David Deshazer Photo 2

Regional Director At Alpha Usa

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Location:
Groraum Seattle und Umgebung
Industry:
Gemeinntzige Einrichtungen
David Deshazer Photo 3

Regional Director At Alpha Usa

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Location:
Vereinigte Staaten
Industry:
Gemeinntzige Einrichtungen

Publications

Us Patents

Random Number Generation Using A Scattering Waveguide

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US Patent:
20080149866, Jun 26, 2008
Filed:
Feb 22, 2006
Appl. No.:
11/816851
Inventors:
David J. DeShazer - Bay City MI, US
Terry V. Clapp - Hertfordshire, GB
Assignee:
DOW CORNING LTD. - Wales
DOW CORNING CORPORATION - Auburn MI
International Classification:
G01N 23/00
US Classification:
250580
Abstract:
The present invention provides a method and apparatus for random number generation using a scattering waveguide. The apparatus includes a light source for providing coherent light and a scattering waveguide for receiving the coherent light and providing scattered light. The relative position of the light source and the scattering waveguide are variable. The apparatus also includes a detector for forming at least one random number based on the scattered light.

Electronic Article And Method Of Forming

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US Patent:
20130187185, Jul 25, 2013
Filed:
Sep 22, 2010
Appl. No.:
13/825514
Inventors:
David Deshazer - Bay City MI, US
Udo Pernisz - Midland MI, US
Ludmil Zambov - Midland MI, US
Assignee:
DOW CORNING CORPORATION - Midland MI
International Classification:
H01L 31/0232
H01L 33/58
US Classification:
257 98, 438 29, 438 69, 257432
Abstract:
An electronic article includes an optoelectronic semiconductor having a refractive index of 3.7±2 and a dielectric layer disposed on the optoelectronic semiconductor. The dielectric layer has a thickness of at least 50 μm and a refractive index of 1.4±0.1. The electronic article includes a gradient refractive index coating (GRIC) that is disposed on the optoelectronic semiconductor and that has a thickness of from 50 to 400 nm. The refractive index of the GRIC varies along the thickness from 2.7±0.7 to 1.5±0.1. The GRIC also includes a gradient of a carbide and an oxycarbide along the thickness. The carbide and the oxycarbide each independently include at least one silicon or germanium atom. The article is formed by continuously depositing the GRIC using plasma-enhanced chemical vapor deposition in a dual frequency configuration and subsequently disposing the dielectric layer on the GRIC.

Polyheterosiloxane Composition Including Lanthanide Metal

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US Patent:
20130284978, Oct 31, 2013
Filed:
Dec 22, 2011
Appl. No.:
13/996709
Inventors:
David Deshazer - Bay City MI, US
Martin Grasmann - Midland MI, US
Lizhi Liu - Midland MI, US
Nanguo Liu - Midland MI, US
Elizabeth McQuiston - Midland MI, US
Keith Shawn Mealey - Midland MI, US
Randall Schmidt - Midland MI, US
Assignee:
Dow Corning Corporation - Midland MI
International Classification:
C09K 11/06
US Classification:
25230135, 528 9
Abstract:
A polyheterosiloxane composition includes (A) a first metal (M1), (B) a second metal (M2), and (C) siloxy units having the formula (RSiO), (RSiO), (RSiO), and/or (S1O). Ris independently a hydrocarbon or halogenated hydrocarbon group including 1 to 30 carbon atoms. The mole fractions of (A), (B), and (C) relative to each other is of the formula [(M1)][(M2)][RSiO][RSiO][RSiO][SiO], wherein a and b are each independently from 0.001 to 0.9, each of m, d, t, and q are independently from zero to 0.9 so long as m, d, t, and q are not all zero and the sum of a+b+m+d+t+q≈1. At least one of (M1) and (M2) is a lanthanide metal. The composition exhibits a quantum yield of at least 0.05% and is formed using a method including reacting (A′) a metal (M3) alkoxide, (B′) an optional hydrolyzable metal (M4) salt, (C′) a silicon-containing material and (D) water.
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David J Deshazer from Verona, NJ, age ~47 Get Report