US Patent:
20130029848, Jan 31, 2013
Inventors:
Antonio D. Corcoles Gonzalez - Mount Kisco NY, US
Jiansong Gao - Boulder CO, US
Dustin A. Hite - Boulder CO, US
George A. Keefe - Cortlandt Manor NY, US
David P. Pappas - Louisville CO, US
Mary E. Rothwell - Ridgefield CT, US
Matthias Steffen - Cortlandt Manor NY, US
Chang C. Tsuei - Chappaqua NY, US
Michael R. Vissers - Erie CO, US
David S. Wisbey - Lafayette CO, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01P 7/06
H01L 39/02
H01L 39/24
H01L 25/00
US Classification:
505210, 505470, 505472, 505150, 438665, 333227, 327564
Abstract:
Low-loss superconducting devices and methods for fabricating low loss superconducting devices. For example, superconducting devices, such as superconducting resonator devices, are formed with a (200)-oriented texture titanium nitride (TiN) layer to provide high Q, low loss resonator structures particularly suitable for application to radio-frequency (RF) and/or microwave superconducting resonators, such as coplanar waveguide superconducting resonators. In one aspect, a method of forming a superconducting device includes foaming a silicon nitride (SiN) seed layer on a substrate, and forming a (200)-oriented texture titanium nitride (TiN) layer on the SiN seed layer.
