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Franklin D Crawford

from Mesa, AZ
Age ~64

Franklin Crawford Phones & Addresses

  • 8103 Southern Ave, Mesa, AZ 85208
  • Spring, TX
  • 7313 Potters Trl, Austin, TX 78729
  • 1801 Palm Valley Blvd, Round Rock, TX 78664

Resumes

Resumes

Franklin Crawford Photo 1

Franklin Crawford

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Business Records

Name / Title
Company / Classification
Phones & Addresses
Franklin Scott Crawford
President
F Scott Crawford LLC
10900 Stonelake Blvd, Austin, TX 78759
3661 Stockton Dr, Carrollton, TX 75010
Franklin L. Crawford
Treasurer
GARCIA'S OF SCOTTSDALE, INC
4455 E Camelback Rd, Phoenix, AZ 85018
4350 E Camelback Rd, Phoenix, AZ 85018
7832 E Beryl Ave, Scottsdale, AZ 85258

Publications

Isbn (Books And Publications)

Proud to Say I Am a Union Soldier: The Last Letters Home from Federal Soldiers Written During the Civil War 1861-1865

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Author

Franklin R. Crawford

ISBN #

0788431897

Us Patents

Boron Implanted Dielectric Structure

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US Patent:
60970790, Aug 1, 2000
Filed:
Feb 4, 1999
Appl. No.:
9/244913
Inventors:
Tim Z. Hossain - Austin TX
Franklin D. Crawford - Austin TX
Don A. Tiffin - Austin TX
Assignee:
Advanced Micro Devices, Inc. - Sunnyvale CA
International Classification:
H01L 2358
US Classification:
257634
Abstract:
An interlevel dielectric and a method for making same wherein boron is introduced into the dielectric though an implantation process. During the implantation process, either the boron-10 or the boron-11 boron isotope may be selected and introduced into the dielectric. Boron is introduced to make the dielectric flow at lower temperatures. Selectively implanting boron-10 or boron-11 during implantation, as opposed to buying boron comprising a specific boron isotope from a supplier and introducing boron during CVD, lowers the production costs. Furthermore, introducing boron into the dielectric during the implantation process as opposed to during deposition of the dielectric during a CVD process, the dielectric layer is free of "boron" bumps. Boron-bearing dielectrics can be made to made to flow at lower temperatures than dielectrics which do not contain boron. Furthermore, boron-11 can be introduced exclusively into the dielectric during the implantation process to eliminate soft errors caused by the formation of alpha particles.

Alternative Process For Bpteos/Bpsg Layer Formation

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US Patent:
59131314, Jun 15, 1999
Filed:
Nov 14, 1996
Appl. No.:
8/748815
Inventors:
Tim Z. Hossain - Austin TX
Franklin D. Crawford - Austin TX
Don A. Tiffin - Austin TX
Assignee:
Advanced Micro Devices, Inc. - Sunnyvale CA
International Classification:
H01L 2126
H01L 2131
US Classification:
438423
Abstract:
An interlevel dielectric and a method for making same wherein boron is introduced into the dielectric though an implantation process. During the implantation process, either the boron-10 or the boron-11 boron isotope may be selected and introduced into the dielectric. Boron is introduced to make the dielectric flow at lower temperatures. Selectively implanting boron-10 or boron-11 during implantation, as opposed to buying boron comprising a specific boron isotope from a supplier and introducing boron during CVD, lowers the production costs. Furthermore, by introducing boron into the dielectric during the implantation process as opposed to during deposition of the dielectric during a CVD process, the dielectric layer is free of boron bumps. Boron-bearing dielectrics can be made to made to flow at lower temperatures than dielectrics which do not contain boron. Furthermore, boron-11 can be introduced exclusively into the dielectric during the implantation process to eliminate soft errors caused by the formation of alpha particles.
Franklin D Crawford from Mesa, AZ, age ~64 Get Report