Gen Feng

from North Potomac, MD

Age ~47

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Gen Feng Phones & Addresses

North Potomac, MD
Milpitas, CA
San Jose, CA

Publications

Us Patents

Method And System For Providing Magnetic Junctions Utilizing Oxygen Blocking, Oxygen Adsorber And Tuning Layer(S)

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US Patent:

20180351086, Dec 6, 2018

Filed:

Jul 25, 2017

Appl. No.:

15/659605

Inventors:

- Gyeonggi-do, KR
Gen Feng - North Potomac MD, US
Mohamad Towfik Krounbi - San Jose CA, US

International Classification:

H01L 43/08
H01L 43/02
H01L 43/12
H01L 27/22

Abstract:

A magnetic junction and method for providing the magnetic junction are described. The magnetic junction resides on a substrate and is usable in a magnetic device. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, a free layer, an oxide layer and at least one oxygen blocking layer. The free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. The nonmagnetic spacer layer is between the pinned layer and the free layer. The oxide layer is adjacent to the free layer. The free layer is between the nonmagnetic spacer layer and the oxide layer. The oxygen blocking layer(s) has a position selected from adjacent to the oxide layer and adjacent to the pinned layer. In some aspects, the magnetic junction may also include an oxygen adsorber layer and/or a tuning layer.

Method And System For Providing A Magnetic Junction Having A Low Damping Hybrid Free Layer

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US Patent:

20180261762, Sep 13, 2018

Filed:

May 23, 2017

Appl. No.:

15/603402

Inventors:

- Gyeonggi-do, KR
Xueti Tang - Fremont CA, US
Vladimir Nikitin - Campbell CA, US
Shuxia Wang - San Jose CA, US
Gen Feng - North Potomac MD, US

International Classification:

H01L 43/08
H01L 43/12
G11C 11/16
H01L 43/10

Abstract:

A magnetic junction and method for providing the magnetic junction are described. The magnetic junction includes a reference layer, a nonmagnetic spacer layer and a hybrid free layer. The hybrid free layer is switchable between stable magnetic states using a current passed through the magnetic junction. The nonmagnetic spacer layer is between the free layer and the reference layer. The hybrid free layer includes a soft magnetic layer, a hard magnetic layer and an oxide coupling layer between the hard magnetic layer and the soft magnetic layer. The soft magnetic layer has a soft layer magnetic thermal stability coefficient of not more than thirty. The hard magnetic layer has a hard layer magnetic thermal stability coefficient of at least twice the soft layer magnetic thermal stability coefficient.

Method And System For Providing A Magnetic Layer In A Magnetic Junction Usable In Spin Transfer Or Spin Orbit Torque Applications Using A Sacrificial Oxide Layer

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US Patent:

20180247684, Aug 30, 2018

Filed:

Apr 27, 2018

Appl. No.:

15/965563

Inventors:

- Gyeonggi-do, KR
Mohamad Towfik Krounbi - San Jose CA, US
Gen Feng - North Potomac MD, US
Vladimir Nikitin - Campbell CA, US

International Classification:

G11C 11/16
H01L 43/10
H01L 43/12

Abstract:

A magnetic device and method for providing the device are described. The magnetic device includes magnetic junction(s) and spin-orbit interaction active layer(s) adjacent to the magnetic junction free layer(s). The magnetic junction includes free and pinned layers separated by a nonmagnetic spacer layer. The free layer is switchable between stable magnetic states. Providing the pinned and/or free layer(s) includes providing a magnetic layer including a glass-promoting component, providing a sacrificial oxide on the magnetic layer, providing a sacrificial layer on the sacrificial oxide and performing anneal(s) of the magnetic layer, the sacrificial oxide layer and the sacrificial layer at anneal temperature(s) greater than 300 degrees Celsius and not exceeding 475 degrees Celsius. The magnetic layer is amorphous as-deposited but is at least partially crystallized after the anneal(s). The sacrificial layer includes a sink for the glass-promoting component. The sacrificial layer and the sacrificial oxide are removed after the anneal(s).

Method And System For Providing A Magnetic Junction Usable In Spin Transfer Or Spin-Orbit Torque Applications And Including A Magnetic Barrier Layer

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US Patent:

20180197589, Jul 12, 2018

Filed:

Feb 23, 2018

Appl. No.:

15/903926

Inventors:

- Gyeonggi-do, KR
Dmytro Apalkov - San Jose CA, US
Gen Feng - North Potomac MD, US
Mohamad Towfik Krounbi - San Jose CA, US

International Classification:

G11C 11/16
H01L 27/22
H01L 43/08
H01L 43/12

Abstract:

A magnetic device and method for providing the magnetic device are described. The magnetic device includes magnetic junctions and spin-orbit interaction (SO) active layer(s). Each magnetic junction includes free and pinned layers separated by a nonmagnetic spacer layer. The pinned layer has a perpendicular magnetic anisotropy (PMA) energy greater than an out-of-plane demagnetization energy. The pinned layer includes a magnetic barrier layer between a magnetic layer and a high PMA layer including at least one nonmagnetic component. The magnetic barrier layer includes Co and at least one of Ta, W and Mo. The magnetic barrier layer is for blocking diffusion of the nonmagnetic component. The SO active layer(s) are adjacent to the free layer. The SO active layer(s) carry a current in-plane and exert a SO torque on the free layer due to the current. The free layer is switchable between stable magnetic states using the SO torque.

Method And System For Providing A Low Moment Cofebmo Free Layer Magnetic Junction Usable In Spin Transfer Torque Applications

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US Patent:

20180102474, Apr 12, 2018

Filed:

Nov 29, 2016

Appl. No.:

15/364147

Inventors:

- Gyeonggi-do, KR
Mohamad Towfik Krounbi - San Jose CA, US
Donkoun Lee - San Jose CA, US
Gen Feng - North Potomac MD, US

International Classification:

H01L 43/08
H01L 43/10
H01L 43/12
H01L 27/22
G11C 11/16

Abstract:

A magnetic junction and method for providing the magnetic junction are described. The magnetic junction resides on a substrate and is usable in a magnetic device. The magnetic junction includes free and pinned layers separated by a nonmagnetic spacer layer. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The free layer has a free layer perpendicular magnetic anisotropy energy greater than a free layer out-of-plane demagnetization energy. The free layer includes a [CoFeB]Molayer, where u+t=1, x+y+z=1 and u, t, x, y and z are each nonzero. The [CoFeB]Molayer has a perpendicular magnetic anisotropy energy greater than its out-of-plane demagnetization energy.

Method And System For Providing A Magnetic Junction Usable In Spin Transfer Torque Applications And Including A Magnetic Barrier Layer

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US Patent:

20170263859, Sep 14, 2017

Filed:

Jun 8, 2016

Appl. No.:

15/177138

Inventors:

- Gyeonggi-do, KR
Dmytro Apalkov - San Jose CA, US
Gen Feng - North Potomac MD, US
Mohamad Towfik Krounbi - San Jose CA, US

International Classification:

H01L 43/10
G11C 11/16
H01L 43/12
H01L 27/22
H01L 43/02
H01L 43/08

Abstract:

A magnetic junction and method for providing the magnetic junction are described. The magnetic junction resides on a substrate and is usable in a magnetic device. The magnetic junction includes free and pinned layers separated by a nonmagnetic spacer layer. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The pinned layer has a pinned layer perpendicular magnetic anisotropy energy greater than a pinned layer out-of-plane demagnetization energy. The pinned layer includes a high perpendicular magnetic anisotropy (PMA) layer including at least one nonmagnetic component, a magnetic layer and a magnetic barrier layer between the high PMA layer and the magnetic layer. The magnetic barrier layer includes Co and at least one of Ta, W and Mo. The magnetic barrier layer is for blocking diffusion of the nonmagnetic component of the high PMA layer.

Method And System For Providing A Magnetic Layer In A Magnetic Junction Usable In Spin Transfer Torque Applications Using A Sacrificial Oxide Layer

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US Patent:

20170256702, Sep 7, 2017

Filed:

Jun 8, 2016

Appl. No.:

15/177176

Inventors:

- Gyeonggi-do, KR
Mohamad Towfik Krounbi - San Jose CA, US
Gen Feng - North Potomac MD, US
Vladimir Nikitin - Campbell CA, US

International Classification:

H01L 43/02
H01L 43/08
H01L 43/12
G11C 11/16

Abstract:

A magnetic junction and method for providing the magnetic junction are described. The magnetic junction includes free and pinned layers separated by a nonmagnetic spacer layer. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. Providing the pinned and/or free layer(s) includes providing a magnetic layer including a glass-promoting component, providing a sacrificial oxide layer on the magnetic layer, providing a sacrificial layer on the sacrificial oxide layer and performing at least one anneal of the magnetic layer, the sacrificial oxide layer and the sacrificial layer at anneal temperature(s) greater than 300 degrees Celsius and not exceeding 475 degrees Celsius. The magnetic layer is amorphous as-deposited but is at least partially crystallized after the anneal(s). The sacrificial layer includes a sink for the glass-promoting component. The sacrificial layer and the sacrificial oxide layer are removed after the anneal(s).

Method And System For Providing Magnetic Junctions Including Free Layers That Are Cobalt-Free

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US Patent:

20160197119, Jul 7, 2016

Filed:

Dec 21, 2015

Appl. No.:

14/977094

Inventors:

- Gyeonggi-do, KR
Gen Feng - North Potomac MD, US
Dustin William Erickson - Morgan Hill CA, US

International Classification:

H01L 27/22
H01L 43/10
H01L 43/12
H01L 43/02

Abstract:

A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. The magnetic junction includes a free layer, a nonmagnetic spacer layer, and a reference layer. The free layer includes at least one of Fe and at least one Fe alloy. Furthermore, the free layer excludes Co. The nonmagnetic spacer layer adjoins the free layer. The nonmagnetic spacer layer residing between reference layer and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.