US Patent:
20180102474, Apr 12, 2018
Inventors:
- Gyeonggi-do, KR
Mohamad Towfik Krounbi - San Jose CA, US
Donkoun Lee - San Jose CA, US
Gen Feng - North Potomac MD, US
International Classification:
H01L 43/08
H01L 43/10
H01L 43/12
H01L 27/22
G11C 11/16
Abstract:
A magnetic junction and method for providing the magnetic junction are described. The magnetic junction resides on a substrate and is usable in a magnetic device. The magnetic junction includes free and pinned layers separated by a nonmagnetic spacer layer. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The free layer has a free layer perpendicular magnetic anisotropy energy greater than a free layer out-of-plane demagnetization energy. The free layer includes a [CoFeB]Molayer, where u+t=1, x+y+z=1 and u, t, x, y and z are each nonzero. The [CoFeB]Molayer has a perpendicular magnetic anisotropy energy greater than its out-of-plane demagnetization energy.