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Hadi Mojaradi

from La Canada, CA
Age ~65
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Also known as:
Hadi Mojarradi, Hadi Mojrad, Hadi Mojard, Hadi I
Related to:
Nikki MojarradiAbdolreza Mojaradi, 64Amir Mojarradi, 31Nikta NazeriAlaleh Mojarradi, 37Nikta N Mojarradi, 62Mohammad M Mojarradi, 67Hadi Mojarradi, 67
Connected to:
Erica Mojarro, 44Mahnaz N Mojaver, 59Ndidi A Mojay, 43Alexis Mojena, 52Clara I Mojena, 62Ezequiel M Mojena, 86Angelica Mojica, 50Celina Y Mojica, 42Floro M Mojica, 83Geneva M Mojica, 28

Hadi Mojaradi Phones & Addresses

  • La Canada, CA
  • 19942 Ash Ln, Porter Ranch, CA 91326 (818) 832-1905
  • Northridge, CA
  • Scottsdale, AZ
  • Los Angeles, CA
  • Pullman, WA

Publications

Us Patents

Integrated Ultra Thin Scalable 94 Ghz Si Power Source

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US Patent:
8193995, Jun 5, 2012
Filed:
May 19, 2009
Appl. No.:
12/468253
Inventors:
Mohammad M. Mojarradi - La Canada CA, US
Goutam Chattopadhyay - Pasadena CA, US
Harish Manohara - Arcadia CA, US
Hadi Mojaradi - Northridge CA, US
Assignee:
California Institute of Technology - Pasadena CA
International Classification:
H01Q 13/10
US Classification:
343770
Abstract:
In one embodiment, a slot array antenna comprising a quartz layer and a silicon layer, wherein the quartz and silicon layers are matched to suppress microwave modes, and a metal layer adjacent to the silicon layer comprising offset cuts.

High Power Compact Microwave Amplifier

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US Patent:
52085546, May 4, 1993
Filed:
Jan 24, 1992
Appl. No.:
7/825194
Inventors:
Harvey Endler - Van Nuys CA
Hadi Mojaradi - Los Angeles CA
Assignee:
Systron Donner Corporation - Sylmar CA
International Classification:
H03F 368
US Classification:
330295
Abstract:
A Class A high power amplifier having an operating frequency in the range of less than substantially 2 GHz and suitable for aircraft use, is all solid state in that gallium arsenide field effect transistors are utilized. These are mounted in a large copper heat sink which is air cooled to provide for overall cooling by conduction and convection. By the use of microstrip matching circuits, the relatively low impedance of the gallium arsenide FET units is matched to the required higher system impedance. At the same time a 40% band-width is provided due to the superior matching.
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Hadi Mojaradi from La Canada, CA, age ~65 Get Report