Hoa T Truong

6794110, Sep 21, 2004

Mar 4, 2002

10/090646

Gregory Breyta - San Jose CA
Hiroshi Ito - San Jose CA
Hoa D. Truong - San Jose CA

International Business Machines Corporation - Armonk NY

G03F 7004

4302701, 430325, 430326, 430907, 526281, 526242, 5262321, 5262196, 526332

A polymer blend is provided for use in a lithographic photoresist composition, particularly a chemical amplification photoresist. In a preferred embodiment, the polymer blend is substantially transparent to deep ultraviolet radiation, i. e. , radiation of a wavelength less than 250 nm, including wavelengths of 157 nm, 193 nm and 248 nm, and has improved sensitivity and resolution. Processes for preparing and using the polymer blend are also provided, as are lithographic photoresist compositions that contain the polymer blend.

6806026, Oct 19, 2004

May 31, 2002

10/159635

Robert David Allen - San Jose CA
Gregory Breyta - San Jose CA
Phillip Brock - Sunnyvale CA
Richard A. DiPietro - Campbell CA
Debra Fenzel-Alexander - San Jose CA
Carl Larson - San Jose CA
David R. Medeiros - Kitchawan NY
Dirk Pfeiffer - Dobbs Ferry NY
Ratnam Sooriyakumaran - San Jose CA
Hoa D. Truong - San Jose CA
Gregory M. Wallraff - Morgan Hill CA

International Business Machines Corporation - Armonk NY

G03F 7039

4302701, 430311, 430325, 430326, 430327, 430907, 430323, 522154, 522156

A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formula: where R represents hydrogen (H), a linear or branched alkyl group of 1 to 20 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 20 carbons; and where R represents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl (CF ) group attached to each carbon of the substituted aliphatic group, or a substituted or unsubstituted aromatic group; and where R represents hydrogen (H), methyl (CH ), trifluoromethyl (CF ), difluoromethyl (CHF ), fluoromethyl (CH F), or a semi- or perfluorinated aliphatic chain; and where R represents trifluoromethyl (CF ), difluoromethyl (CHF ), fluoromethyl (CH F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group. A method of patterning a substrate using the photoresist composition is also provided herein.

7014980, Mar 21, 2006

Aug 12, 2004

10/916934

Robert David Allen - San Jose CA, US
Gregory Breyta - San Jose CA, US
Phillip Brock - Sunnyvale CA, US
Richard A. DiPietro - Campbell CA, US
Debra Fenzel-Alexander - San Jose CA, US
Carl Larson - San Jose CA, US
David R. Medeiros - Kitchawan NY, US
Dirk Pfeiffer - Dobbs Ferry NY, US
Ratnam Sooriyakumaran - San Jose CA, US
Hoa D. Truong - San Jose CA, US
Gregory M. Wallraff - Morgan Hill CA, US

International Business Machines Corporation - Armonk NY

G03F 7/039
G03F 7/32
G03F 7/38
C08J 3/28

4302701, 430907, 522154, 522156, 526245

A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formula where Rrepresents hydrogen (H), a linear or branched alkyl group of 1 to 20 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 20 carbons; and where Rrepresents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl (CF) group attached to each carbon of the substituted aliphatic group, or a substituted or unsubstituted aromatic group; and where Rrepresents hydrogen (H), methyl (CH), trifluoromethyl (CF), difluoromethyl(CHF), fluoromethyl (CHF), or a semi- or perfluorinated aliphatic chain; and where Rrepresents trifluoromethyl (CF), difluoromethyl (CHF), fluoromethyl (CHF), or a semi- or perfluorinated substituted or unsubstituted aliphatic group. A method of patterning a substrate using the photoresist composition is also provided herein.

7135595, Nov 14, 2006

Jan 12, 2006

11/330659

Robert David Allen - San Jose CA, US
Gregory Breyta - San Jose CA, US
Phillip Brock - Sunnyvale CA, US
Richard A. DiPietro - Campbell CA, US
Debra Fenzel-Alexander - San Jose CA, US
Carl Larson - San Jose CA, US
David R. Medeiros - Kitchawan NY, US
Dirk Pfeiffer - Dobbs Ferry NY, US
Ratnam Sooriyakumaran - San Jose CA, US
Hoa D. Truong - San Jose CA, US
Gregory M. Wallraff - Morgan Hill CA, US

International Business Machines Corporation - Armonk NY

C08F 118/00
C08F 18/20
C08F 120/22
C07C 69/62
C07C 69/52

560220, 560219, 560223, 526245

A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formula.

7141692, Nov 28, 2006

Nov 24, 2003

10/721302

Robert David Allen - San Jose CA, US
Mahmoud Khojasteh - Poughkeepsie NY, US
Qinghuang Lin - Yorktown Heights NY, US
Dirk Pfeiffer - Dobbs Ferry NY, US
Ratnam Sooriyakumaran - San Jose CA, US
Hoa D. Truong - San Jose CA, US

International Business Machines Corporation - Armonk NY

C08G 77/14

556460, 556439, 556425, 556449, 4302701, 430313, 430323, 430330, 430331, 430326, 430905, 430926

A nonpolymeric silsesquioxane is provided wherein at least one silicon atom of the silsesquioxane is directly or indirectly bound to an acid-cleavable substituent R. The silsesquioxane has a glass transition temperature Tof greater than 50 C. , and the Rsubstituent can be cleaved from the silsesquioxane at a temperature below T, generally at least 5 C. below T. The remainder of the silicon atoms within the silsesquioxane structure may be bound to additional acid-cleavable groups, acid-inert polar groups R, and/or acid-inert nonpolar groups R. The nonpolymeric silsesquioxane can be a polyhedral silsesquioxane optionally having one to three open vertices, such that the polyhedron appears to be a “partial cage” structure, or a macromer of two to four such polyhedral silsesquioxanes. Photoresist compositions containing the novel nonpolymeric silsesquioxanes are also provided, as is a method for using the compositions in preparing a patterned substrate.

7193023, Mar 20, 2007

Dec 4, 2003

10/729169

Robert David Allen - San Jose CA, US
Gregory Breyta - San Jose CA, US
Phillip Joe Brock - Sunnyvale CA, US
Richard Anthony DiPietro - Campbell CA, US
Ratnam Sooriyakumaran - San Jose CA, US
Hoa D. Truong - San Jose CA, US
Gregory Michael Wallraff - Morgan Hill CA, US

International Business Machines Corporation - Armonk NY

C08F 112/68

526242, 526245, 526246, 526247

Polymers containing an acetal or ketal linkage and their use in lithographic photoresist compositions, particularly in chemical amplification photoresists, are provided. The polymer is prepared from at least one first olefinic monomer containing an acetal or ketal linkage, the acid-catalyzed cleavage of which renders the polymer soluble in aqueous base; and at least one second olefinic monomer selected from (i) an olefinic monomer containing a pendant fluorinated hydroxyalkyl group R, (ii) an olefinic monomer containing a pendant fluorinated alkylsulfonamide group R, and (iii) combinations thereof. The acetal or ketal linkage may be contained within an acid-cleavable substituent Rin the first olefinic monomer. A method for using the photoresist compositions containing these polymers in preparing a patterned substrate is also provided in which the polymer is rendered soluble in aqueous base at a temperature of less than about 100 C. by acid-catalyzed deprotection of pendent acetal- or ketal-protected carboxylic acid groups.

7358029, Apr 15, 2008

Sep 29, 2005

11/239507

Robert David Allen - San Jose CA, US
Phillip Joe Brock - Sunnyvale CA, US
Richard Anthony DiPietro - Campbell CA, US
Ratnam Sooriyakumaran - San Jose CA, US
Hoa D. Truong - San Jose CA, US

International Business Machines Corporation - Armonk NY

G03F 7/039
G03F 7/004
G03F 7/28
G03F 7/38

4302701, 430311, 430326, 430905, 430909, 430910, 430914

A photoresist composition including a polymer, a photoacid generator and a dissolution modification agent, a method of forming an image using the photoresist composition and the dissolution modification agent composition. The dissolution modification agent is insoluble in aqueous alkaline developer and inhibits dissolution of the polymer in the developer until acid is generated by the photoacid generator being exposed to actinic radiation, whereupon the dissolution modifying agent, at a suitable temperature, becomes soluble in the developer and allows the polymer to dissolve in the developer. The DMAs are glucosides, cholates, citrates and adamantanedicarboxylates protected with acid-labile ethoxyethyl, tetrahydrofuranyl, and angelicalactonyl groups.

7476492, Jan 13, 2009

May 26, 2006

11/441965

Robert David Allen - San Jose CA, US
Richard Anthony DiPietro - Campbell CA, US
Ratnam Sooriyakumaran - San Jose CA, US
Hoa D. Truong - San Jose CA, US

International Business Machines Corporation - Armonk NY

G03F 7/30
G03F 7/004

430326, 4302701, 430330, 430907, 430910

The present invention relates to a radiation sensitive photoresist composition. The composition comprises a polymer comprising at least two monomers. The first monomer has an acid cleavable tertiary ester group. The second monomer is an acidic monomer. The acid cleavable ester group of the polymer has a surprisingly low activation energy which results in improved resist images in lithographic processes.