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Iain H Hamilton

from Youngsville, NC
Age ~58
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Also known as:
Iain I Hamilton, Iain Hamiltom
Related to:
Robyn Hamilton, 24Elaine Hamilton, 57
Connected to:
Alcus L Hamilton, 61Anastacia A Hamilton, 36Antonette S Hamilton, 42Argus J Hamilton, 72Ayesha K Hamilton, 51Catherine E Hamilton, 68Cherlyn J HamiltonChristin D Hamilton, 34Coby G Hamilton, 69Conrad G Hamilton, 50

Iain Hamilton Phones & Addresses

  • Youngsville, NC
  • North Myrtle Beach, SC
  • Myrtle Beach, SC
  • 1023 Medalist Dr, Morrisville, NC 27560 (919) 380-8208

Resumes

Resumes

Iain Hamilton Photo 1

Director Of Global Procurement

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Location:
Durham, NC
Industry:
Semiconductors
Work:
Cree Dec 2009 - Sep 2013
Engineering Manager
Cree Dec 2009 - Sep 2013
Global Supply Chain Manager
Cree Sep 2007 - Dec 2009
Manufacturing Manager
Cree 2005 - 2007
Development Engineering Manager
Cree 2002 - 2004
Process Engineer
Education:
University of Phoenix Jan 1, 2008 - Dec 31, 2010
Master of Business Administration, Masters, Management Glasgow Caledonian University Jan 1, 1988 - Dec 31, 1993
Bachelor of Engineering, Bachelors, Electronics Engineering Trios College Business Technology Healthcare
Skills:
Semiconductors
Spc
Product Engineering
Jmp
Design of Experiments
Iain Hamilton Photo 2

Iain Hamilton

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Iain Hamilton Photo 3

Iain Hamilton

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Publications

Isbn (Books And Publications)

Koestler

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Author

Iain Hamilton

ISBN #

0025476602

Koestler: A Biography

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Author

Iain Hamilton

ISBN #

0436191016

A Handbook for Expert Witnesses in Children Act Cases

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Author

Iain Hamilton

ISBN #

0853086281

Embarkation for Cythera: A Cycle of Poems

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Author

Iain Hamilton

ISBN #

0856163503

Us Patents

Led Fabrication Via Ion Implant Isolation

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US Patent:
20050194584, Sep 8, 2005
Filed:
Nov 12, 2004
Appl. No.:
10/987627
Inventors:
David Slater - Durham NC, US
John Edmond - Cary NC, US
Alexander Suvorov - Durham NC, US
Iain Hamilton - Youngsville NC, US
International Classification:
H01L029/06
H01L031/0328
US Classification:
257013000
Abstract:
A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, and a resistive gallium nitride region on the n-type epitaxial layer and adjacent the p-type epitaxial layer for electrically isolating portions of the p-n junction. A metal contact layer is formed on the p-type epitaxial layer. Some embodiments include a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, wherein portions of the epitaxial region are patterned into a mesa and wherein the sidewalls of the mesa comprise a resistive Group III nitride region for electrically isolating portions of the p-n junction. In method embodiments disclosed, the resistive border is formed by forming an implant mask on the p-type epitaxial region and implanting ions into portions of the p-type epitaxial region to render portions of the p-type epitaxial region semi-insulating. A photoresist mask or a sufficiently thick metal layer may be used as the implant mask. In some method embodiments, a mesa is formed in the epitaxial region prior to implantation. During implantation, the epiwafer is mounted at an angle such that ions are implanted directly into the sidewalls of the mesa, thereby rendering portions of the mesa semi-insulating. The epiwafer may be rotated during ion implantation.

Led Fabrication Via Ion Implant Isolation

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US Patent:
20090104726, Apr 23, 2009
Filed:
Dec 4, 2008
Appl. No.:
12/327882
Inventors:
John Adam Edmond - Durham NC, US
Alexander Suvorov - Durham NC, US
Iain Hamilton - Youngsville NC, US
Assignee:
Cree, Inc. - Durham NC
International Classification:
H01L 21/00
H01L 21/04
H01L 21/18
US Classification:
438 45, 257E21054, 257E21085
Abstract:
A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, and a resistive gallium nitride region on the n-type epitaxial layer and adjacent the p-type epitaxial layer for electrically isolating portions of the p-n junction. A metal contact layer is formed on the p-type epitaxial layer. Some embodiments include a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, wherein portions of the epitaxial region are patterned into a mesa and wherein the sidewalls of the mesa comprise a resistive Group III nitride region for electrically isolating portions of the p-n junction. In method embodiments disclosed, the resistive border is formed by forming an implant mask on the p-type epitaxial region and implanting ions into portions of the p-type epitaxial region to render portions of the p-type epitaxial region semi-insulating. A photoresist mask or a sufficiently thick metal layer may be used as the implant mask. In some method embodiments, a mesa is formed in the epitaxial region prior to implantation. During implantation, the epiwafer is mounted at an angle such that ions are implanted directly into the sidewalls of the mesa, thereby rendering portions of the mesa semi-insulating. The epiwafer may be rotated during ion implantation.
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Iain H Hamilton from Youngsville, NC, age ~58 Get Report