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Jason Rothenberger Phones & Addresses

  • 843 Hereford Way, Schenectady, NY 12309
  • Niskayuna, NY
  • Albany, NY
  • Columbia, MO
  • Wynnewood, PA
  • Pennsburg, PA
  • Los Alamos, NM
  • State College, PA

Work

Company: Bechtel marine propulsion corporation Feb 2012 Address: Niskayuna, NY Position: Senior engineer

Education

Degree: PhD School / High School: University of Missouri-Columbia 2006 to 2011 Specialities: Nuclear Engineering

Skills

Simulations • Physics • Nuclear Engineering • Nuclear • Radiation • Matlab • Mathematica • Finite Element Analysis • Sensors • Monte Carlo Simulation • Radiation Safety • Numerical Analysis • Thermodynamics • Fluid Dynamics • Materials Science • Research • Technical Writing • Solidworks

Industries

Research

Resumes

Resumes

Jason Rothenberger Photo 1

Jason Rothenberger

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Location:
843 Hereford Way, Niskayuna, NY 12309
Industry:
Research
Work:
Bechtel Marine Propulsion Corporation - Niskayuna, NY since Feb 2012
Senior Engineer

University of Missouri - Columbia, Missouri Aug 2011 - Feb 2012
Post Doctoral Fellow

University of Missouri Aug 2005 - Aug 2011
Research Assistant

Los Alamos National Laboratory May 2010 - Aug 2010
Graduate Intern
Education:
University of Missouri-Columbia 2006 - 2011
PhD, Nuclear Engineering
University of Missouri-Columbia 2005 - 2006
M.S., Nuclear Engineering
Penn State University 2001 - 2005
B.S., Physics
Skills:
Simulations
Physics
Nuclear Engineering
Nuclear
Radiation
Matlab
Mathematica
Finite Element Analysis
Sensors
Monte Carlo Simulation
Radiation Safety
Numerical Analysis
Thermodynamics
Fluid Dynamics
Materials Science
Research
Technical Writing
Solidworks

Publications

Us Patents

Deep Level Transient Spectrometer

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US Patent:
20130054177, Feb 28, 2013
Filed:
Jul 2, 2012
Appl. No.:
13/540151
Inventors:
Daniel E. Montenegro - Scotia NY, US
Jason B. Rothenberger - Colonie NY, US
Mark A. Prelas - Columbia MO, US
Annie Tipton - San Antonio TX, US
Assignee:
THE CURATORS OF THE UNIVERSITY OF MISSOURI - Columbia MO
International Classification:
G01R 31/26
G06F 19/00
US Classification:
702108
Abstract:
A method for detecting surface and bulk deep states in semiconductor materials is provided. In various embodiments, the method comprises configuring a detection circuit of charge based deep level transient spectrometer in one of a parallel mode and a series mode by controlling the configuration of a switching circuit of the detection circuit. The method additionally comprises generating digitized voltage charge outputs of a device under test utilizing the detection circuit as controlled via execution of an analog-to-digital conversion and timing program by a control system of the charge based deep level transient spectrometer. Furthermore, the method comprises obtaining desired information about deep level transients of the device under test based on the digitized voltage charge outputs via execution of a control system operable to execute a Q-DLTS data analysis program by the control system.
Jason B Rothenberger from Niskayuna, NY, age ~40 Get Report