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Jun Seok Ha

from Oviedo, FL
Age ~51
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Also known as:
Jun S Ha, Junseok Ha
Related to:
Robin Y Lee, 49Min Bae Lee, 46Jungmin Ha, 50Junghyun Ha
Connected to:
Allison M Ha, 49Andrea B Ha, 31Dorinda T Ha, 67Eileen Ha, 36Elise V HaJie F Ha, 62Jillian Ha, 50Jiminie Ha, 45Jungho Ha, 58Ken C Ha, 71

Jun Ha Phones & Addresses

  • Oviedo, FL
  • Yorba Linda, CA
  • Placentia, CA
  • Goleta, CA

Professional Records

Lawyers & Attorneys

Jun Ha Photo 1

Jun Ha - Lawyer

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Licenses:
Washington - Active 1994
Specialties:
General Practice - 100%
Jun Ha Photo 2

Jun Sang Ha, Los Angeles CA - Lawyer

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Address:
Arent Fox, LLP
555 West Fifth Street 48Th Floor, Los Angeles, CA 90013
(202) 857-6000 (Office), (213) 629-7400 (Fax)
Licenses:
Virginia - Authorized to practice law 2008
Education:
Villanova University School of Law
Degree - JD
Specialties:
Health Care - 34%
Bankruptcy / Chapter 11 - 33%
Intellectual Property - 33%

Resumes

Resumes

Jun Ha Photo 3

Jun Ha

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Location:
United States

Publications

Us Patents

High Brightness Light Emitting Diode Covered By Zinc Oxide Layers On Multiple Surfaces Grown In Low Temperature Aqueous Solution

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US Patent:
8637334, Jan 28, 2014
Filed:
Nov 3, 2010
Appl. No.:
12/938948
Inventors:
Daniel B. Thompson - Walnut Creek CA, US
Jacob J. Richardson - Santa Barbara CA, US
Ingrid Koslow - Santa Barbara CA, US
Jun Seok Ha - Goleta CA, US
Steven P. DenBaars - Goleta CA, US
Shuji Nakamura - Santa Barbara CA, US
Maryann E. Lange - Santa Barbara CA, US
Assignee:
The Regents of the University of California - Oakland CA
International Classification:
H01L 33/00
US Classification:
438 29, 257 98, 257103, 257183, 257E33025, 257E33074, 438 46
Abstract:
A high brightness III-Nitride based Light Emitting Diode (LED), comprising multiple surfaces covered by Zinc Oxide (ZnO) layers, wherein the ZnO layers are grown in a low temperature aqueous solution and each have a (0001) c-orientation and a top surface that is a (0001) plane.

Light Emitting Diode Packaging Method With High Light Extraction And Heat Dissipation Using A Transparent Vertical Stand Structure

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US Patent:
20110103077, May 5, 2011
Filed:
Oct 20, 2010
Appl. No.:
12/908793
Inventors:
Chih-Chien Pan - Goleta CA, US
Jun Seok Ha - Goleta CA, US
Steven P. DenBaars - Goleta CA, US
Shuji Nakamura - Santa Barbara CA, US
Junichi Sonoda - Kanagawa, JP
Assignee:
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA - Oakland CA
International Classification:
F21V 29/00
H05K 13/00
US Classification:
362373, 295921
Abstract:
A packaging method for light emitting diodes provides both high light extraction and heat dissipation using a transparent vertical stand structure. A light emitting diode (LED) is attached to a vertical stand structure for supporting the LED, wherein the LED is bonded to the vertical stand structure, so that one of the LED's sides faces vertically upwards, another of the LED's sides faces vertically downwards, a top surface of the LED faces horizontally sideways in one direction, and a bottom surface of the LED faces horizontally sideways in another direction. The vertical stand structure comprises a connecting stem between the LED and a header, and is made of a material that provides for heat dissipation and may also be transparent to light generated in the LED, such as sapphire or zinc oxide. The LED and the vertical stand structure may be encapsulated within a mold.

Light Emitting Diode Structure Utilizing Zinc Oxide Nanorod Arrays On One Or More Surfaces, And A Low Cost Method Of Producing Such Zinc Oxide Nanorod Arrays

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US Patent:
20110108873, May 12, 2011
Filed:
Nov 3, 2010
Appl. No.:
12/938872
Inventors:
Jacob J. Richardson - Santa Barbara CA, US
Daniel B. Thompson - Walnut Creek CA, US
Ingrid Koslow - Santa Barbara CA, US
Jun Seok Ha - Goleta CA, US
Frederick F. Lange - Santa Barbara CA, US
Steven P. DenBaars - Goleta CA, US
Shuji Nakamura - Santa Barbara CA, US
Assignee:
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA - Oakland CA
International Classification:
H01L 33/32
H01L 33/26
B82Y 40/00
B82Y 99/00
US Classification:
257 98, 438 29, 257E33028, 257E33067, 977842, 977734
Abstract:
A method of fabricating a Light Emitting Diode with improved light extraction efficiency, comprising depositing a plurality of Zinc Oxide (ZnO) nanorods on one or more surfaces of a III-Nitride based LED, by growing the ZnO nanorods from an aqueous solution, wherein the surfaces are different from c-plane surfaces of III-Nitride and transmit light generated by the LED.

High Brightness Light Emitting Diode Covered By Zinc Oxide Layers On Multiple Surfaces Grown In Low Temperature Aqueous Solution

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US Patent:
20140103361, Apr 17, 2014
Filed:
Dec 19, 2013
Appl. No.:
14/135241
Inventors:
- Oakland CA, US
Jacob J. Richardson - Santa Barbara CA, US
Ingrid Koslow - Santa Barbara CA, US
Jun Seok Ha - Oviedo FL, US
Frederick F. Lange - Santa Barbara CA, US
Steven P. DenBaars - Goleta CA, US
Shuji Nakamura - Santa Barbara CA, US
Assignee:
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA - Oakland CA
International Classification:
H01L 33/44
H01L 33/32
US Classification:
257 76, 257 98
Abstract:
A high brightness III-Nitride based Light Emitting Diode (LED), comprising multiple surfaces covered by Zinc Oxide (ZnO) layers, wherein the ZnO layers are grown in a low temperature aqueous solution and each have a (0001) c-orientation and a top surface that is a (0001) plane.
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Jun Seok Ha from Oviedo, FL, age ~51 Get Report