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Kailash Chandra Mishra

from North Chelmsford, MA
Age ~71
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Also known as:
Kailash C Mishra, Kailash Dr Mishra, Kailash Chandra Ph, Kailash C Misiak, Kailash C Mishrah, Kailash Chandra, Ph Kailash Chandra
Phone and address:
107 Main St, North Chelmsford, MA 01863
(978) 251-7602
Related to:
Abinash Mishra, 44
Connected to:
Aman Mishra, 29Amar N Mishra, 82Arunkumar H Mishra, 41Avisek Mishra, 39Bharati S Mishra, 60Chirag P Mishra, 35Jayati MishraKabita Mishra, 81Kittu Mishra, 37Munendra P Mishra

Kailash Mishra Phones & Addresses

  • 107 Main St, North Chelmsford, MA 01863 (978) 251-7602
  • N Chelmsford, MA
  • Chelmsford, MA
  • 107 Main St, North Chelmsford, MA 01863 (857) 205-7564

Work

Position: Homemaker

Education

Degree: Graduate or professional degree

Resumes

Resumes

Kailash Mishra Photo 1

Vice President

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Location:
North Chelmsford, MA
Industry:
Law Enforcement
Work:
J.p. Morgan
Vice President
J.p. Morgan
Application Developer
Network Marvels Apr 2013 - Sep 2013
Project Manager
Network Marvels Apr 2011 - Mar 2013
Technical Lead
Network Marvels Apr 2008 - Mar 2011
Senior Software Engineer
Education:
Svkm's Narsee Monjee Institute of Management Studies (Nmims) 2007 - 2010
Master of Business Administration, Masters, Information Systems University of Mumbai 2000 - 2004
Bachelor of Engineering, Bachelors
Skills:
Restful Webservices
Core Java
Java
Jsp
Microsoft Sql Server
Information Security
Database Design
Project Management
Requirements Analysis
Hibernate
Linux
Spring
Servlets
Java Enterprise Edition
Struts
Ejb
Sql
Kailash Mishra Photo 2

Kailash Mishra

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Location:
Detroit, MI
Work:
Osram 2012 - 2017
Head, Technology Scouting
Education:
Sambalpur University
Kailash Mishra Photo 3

Kailash Mishra

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Kailash Mishra Photo 4

Kailash Mishra

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Kailash Mishra Photo 5

Tech Architect At Oracle

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Position:
Tech Architect at Oracle
Location:
Greater Boston Area
Industry:
Information Technology and Services
Work:
Oracle
Tech Architect

Publications

Amazon

Luminescence Process Of Optically Active Ions In Solids, Volume 4 (Science And Technology Of Atomic, Molecular, Condensed Matter & Biological Systems)

Luminescence Process of Optically Active Ions in Solids, Volume 4 (Science and Technology of Atomic, Molecular, Condensed Matter & Biological Systems)

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Current advances in the study of luminescent materials are driven by many factors: the emergence of new materials (nanostructures), more elaborate theoretical models (with increased computational power), more sophisticated experimental equipment and techniques, and the environmentally driven need fo...
Author

Kailash C. Mishra, Baldassare Di Bartolo, John M. Collins

Binding

Hardcover

Publisher

Elsevier Science

ISBN #

0444527761

EAN Code

9780444527769

ISBN #

5

Aesthetic Philosophy Of Abhinavagupta

Aesthetic Philosophy of Abhinavagupta

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Pages: 207About the BookAbhinavagupta propound his Aesthetic philosophy in light of his Tantric philosophy. Tantrism is non-dualistic as it holds the existence of one Reality, the Consciousness. This one Reality, the Consciousness, is manifesting itself in the various forms of knower and known. Acco...
Author

Kailash Pati Mishra

Binding

Hardcover

Publisher

MLBD

ISBN #

8187566973

EAN Code

9788187566977

ISBN #

4

Luminescence And Luminescent Materials: Volume 667 (Mrs Proceedings)

Luminescence and Luminescent Materials: Volume 667 (MRS Proceedings)

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Luminescence is presently, and will continue to be, a challenging field of research in materials science, solid-state physics and chemistry. Recent progress in optoelectronic and display technology continues to drive this field in the search for new luminescent materials. Demands on new procedures f...
Binding

Paperback

Pages

284

Publisher

Cambridge University Press

ISBN #

1107412226

EAN Code

9781107412224

ISBN #

2

Luminescent Materials: Volume 560 (Mrs Proceedings)

Luminescent Materials: Volume 560 (MRS Proceedings)

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Luminescent materials are of interest to members of the spectroscopic, basic science, engineering and display communities. This book presents a wide range of topics from basic research of fluorescence to applications-driven research on phosphors and scintillators. Papers on various luminescent, fluo...
Binding

Hardcover

Pages

368

Publisher

Cambridge University Press

ISBN #

155899467X

EAN Code

9781558994676

ISBN #

1

Studies In Problems Of Comparative Religion

Studies in problems of comparative religion

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Author

Kailash Pati Mishra

Binding

Unknown Binding

Pages

222

Publisher

Kala Prakashan

ISBN #

3

Us Patents

Europium-Activated Barium Magnesium Aluminate Phosphor

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US Patent:
7014792, Mar 21, 2006
Filed:
Sep 20, 2003
Appl. No.:
10/665257
Inventors:
Madis Raukas - Charlestown MA, US
Kailash C. Mishra - Chelmsford MA, US
Robert T. McSweeney - Sayre PA, US
Assignee:
Osram Sylvania Inc. - Danvers MA
International Classification:
C09K 11/64
US Classification:
2523014R, 2523014 F
Abstract:
A europium-activated barium aluminate phosphor is described wherein the phosphor is doped with tetravalent ions of Hf, Zr, or Si. Preferably, the phosphor is represented by (BaEu)MgAlO:(Hf,Zr,Si)where 0. 05≦x≦0. 25 and 0

Doped Dysprosia Discharge Vessel

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US Patent:
7420331, Sep 2, 2008
Filed:
Jun 24, 2005
Appl. No.:
11/160452
Inventors:
George C. Wei - Weston MA, US
Walter P. Lapatovich - Boxford MA, US
Joanne M. Browne - Newburyport MA, US
Kailash C. Mishra - North Chelmsford MA, US
Madis Raukas - Charlestown MA, US
Assignee:
Osram Sylvania Inc. - Danvers MA
International Classification:
H01J 17/16
H01J 61/30
C04B 35/50
G02B 5/20
G02B 5/23
US Classification:
313636, 501152, 252584, 252586
Abstract:
A ceramic discharge vessel is provided wherein the vessel comprises a hollow body for enclosing a discharge and the hollow body is made of a polycrystalline dysprosium oxide containing a luminescent dopant that emits one or more visible light wavelengths when stimulated by radiation generated by the discharge. Preferably, the polycrystalline dysprosium oxide has been doped with one or more of europium, cerium, or terbium in an amount from about 0. 1 to about 10 percent by weight on an oxide basis.

Method For Making A Light Emitting Diode Having A P-N Junction Doped With One Or More Luminescent Activator Ions

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US Patent:
7863068, Jan 4, 2011
Filed:
Apr 29, 2008
Appl. No.:
12/111380
Inventors:
Kailash C. Mishra - North Chelmsford MA, US
Assignee:
OSRAM SYLVANIA Inc. - Danvers MA
International Classification:
H01L 31/00
H01L 31/055
US Classification:
438 45, 438 22, 438 16, 438 29, 438 46, 257E33054, 257E33061
Abstract:
A light emitting diode (LED) includes a p-n junction containing luminescent activator ions. The visible emission from the activator ions preferably complementing the band edge emission of the LED in order to produce an overall white emission from the LED. In a preferred embodiment, the LED has double heterojunction structure having a semiconductor active layer between two confinement layers. The semiconductor active layer includes activator ions preferably selected from among Eu, Tb, Dy, Pr, Tm, and Mn. The electron-hole pairs trapped within the active layer sensitize the activator ions, causing the activator ions to emit light.

Rare Earth-Activated Aluminum Nitride Powders And Method Of Making

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US Patent:
7935325, May 3, 2011
Filed:
Dec 20, 2006
Appl. No.:
12/161017
Inventors:
Bing Han - Lansdale PA, US
Jonathan H. Tao - Oceanside CA, US
Madis Raukas - Charlestown MA, US
Keith A. Klinedinst - Hudson MA, US
Jan B. Talbot - San Diego CA, US
Kailash A. Mishra - North Chelmsford MA, US
Assignee:
OSRAM SYLVANIA Inc. - Danvers MA
The Regents of the University of California - La Jolla CA
International Classification:
C01F 17/00
C01B 21/072
C23C 8/24
C30B 11/00
C30B 9/00
C30B 19/00
H01B 1/02
US Classification:
423263, 423412, 148 166, 148317, 117 11, 117 73, 117 54, 2525181
Abstract:
Rare earth-activated aluminum nitride powders are made using a solution-based approach to form a mixed hydroxide of aluminum and a rare earth metal, the mixed hydroxide is then converted into an ammonium metal fluoride, preferably a rare earth-substituted ammonium aluminum hexafluoride ((NH)AlREF), and finally the rare earth-activated aluminum nitride is formed by ammonolysis of the ammonium metal fluoride at a high temperature. The use of a fluoride precursor in this process avoids sources of oxygen during the final ammonolysis step which is a major source of defects in the powder synthesis of nitrides. Also, because the aluminum nitride is formed from a mixed hydroxide co-precipitate, the distribution of the dopants in the powder is substantially homogeneous in each particle.

Blue-Enriched Incandescent Lamp

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US Patent:
7362049, Apr 22, 2008
Filed:
Dec 28, 2004
Appl. No.:
10/905319
Inventors:
Madis Raukas - Charlestown MA, US
Kailash C. Mishra - North Chelmsford MA, US
Assignee:
Osram Sylvania Inc. - Danvers MA
International Classification:
H01K 1/26
H01K 1/32
US Classification:
313578, 313580, 313486, 313485, 313315
Abstract:
A blue-enriched incandescent lamp having on the interior surface of its light transmissive glass envelope a coating in accordance with an aspect of the invention. The coating contains a phosphor that is energized by the ultraviolet/violet emission (

Light Emitting Diode Having A P-N Junction Doped With One Or More Luminescent Activator Ions

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US Patent:
20050253162, Nov 17, 2005
Filed:
Aug 2, 2005
Appl. No.:
11/161403
Inventors:
Kailash Mishra - North Chelmsford MA, US
Assignee:
OSRAM SYLVANIA INC. - Danvers MA
International Classification:
H01L033/00
US Classification:
257102000, 257103000
Abstract:
A light emitting diode (LED) includes a p-n junction containing luminescent activator ions. The visible emission from the activator ions preferably complementing the band edge emission of the LED in order to produce an overall white emission from the LED. In a preferred embodiment, the LED has double heterojunction structure having a semiconductor active layer between two confinement layers. The semiconductor active layer includes activator ions preferably selected from among Eu, Tb, Dy, Pr, Tm, and Mn. The electron-hole pairs trapped within the active layer sensitize the activator ions, causing the activator ions to emit light.

Lighting Device Having A Color Tunable Wavelength Converter

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US Patent:
20130001597, Jan 3, 2013
Filed:
Jun 28, 2011
Appl. No.:
13/170365
Inventors:
Maria J. Anc - Groveland MA, US
Kailash Mishra - Chelmsford MA, US
Assignee:
OSRAM SYLVANIA INC. - Danvers MA
International Classification:
H01L 33/50
H01L 33/08
B82Y 99/00
US Classification:
257 88, 257 98, 977774, 257E33067
Abstract:
There is herein described a lighting device including at least one LED and a wavelength converter. The wavelength converter includes a supporting plate, a plurality of first host sites and a plurality of second host site. The supporting plate is disposed over the LED. The plurality of the first host sites is disposed directly on a surface of the supporting plate. Each of the plurality of first host sites consists essentially of a first matrix and a plurality of first quantum dots dispersed in the first matrix. The first quantum dots have a first common emission peak wavelength. The plurality of the second host sites is disposed directly on the surface of the supporting plate. Each of the plurality of second host sites consists essentially of a second matrix and a plurality of second quantum dots dispersed in the second matrix. The second quantum dots have a second common emission peak wavelength. The second common emission peak wavelength is different from the first common emission peak wavelength.

Wavelength Converter For An Led, Method Of Making, And Led Containing Same

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US Patent:
20130313603, Nov 28, 2013
Filed:
Jan 31, 2012
Appl. No.:
13/982667
Inventors:
Darshan Kundaliya - Beverly MA, US
Madis Raukas - Lexington MA, US
Adam M. Scotch - Amesbury MA, US
David Hamby - Andover MA, US
Kailash Mishra - North Chelmsford MA, US
Matthew Stough - Exeter NH, US
Assignee:
OSRAM SYLVANIA INC. - Danvers MA
International Classification:
H01L 33/50
C30B 23/02
C30B 23/06
C09K 11/77
C30B 29/68
US Classification:
257 98, 428212, 117108
Abstract:
A wavelength converter for an LED is described that comprises a substrate of monocrystalline garnet having a cubic crystal structure, a first lattice parameter and an oriented crystal face. An epitaxial layer is formed directly on the oriented crystal face of the substrate. The layer is comprised of a monocrystalline garnet phosphor having a cubic crystal structure and a second lattice parameter that is different from the first lattice parameter wherein the difference between the first lattice parameter and the second lattice parameter results in a lattice mismatch within a range of 15%. The strain induced in the phosphor layer by the lattice mismatch shifts the emission of the phosphor to longer wavelengths when a tensile strain is induced and to shorter wavelengths when a compressive strain is induced. Preferably, the wavelength converter is mounted on the light emitting surface of a blue LED to produce an LED light source.
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Kailash Chandra Mishra from North Chelmsford, MA, age ~71 Get Report