Search

Ken J Ando

from Santa Barbara, CA
Age ~85

Ken Ando Phones & Addresses

  • 1153 Las Palmas Dr, Santa Barbara, CA 93110 (805) 895-0814
  • Stamford, CT
  • Potomac, MD
  • El Segundo, CA
  • San Jose, CA

Resumes

Resumes

Ken Ando Photo 1

Senior Consultant

View page
Location:
1153 Las Palmas Dr, Santa Barbara, CA 93110
Industry:
Aviation & Aerospace
Work:
Aerospace Corp Nov 2006 - Feb 2013
Sr Engineer

Raytheon Vision Systems 1998 - 2006
Raytheon Vision Systems

Raytheon 1988 - 2006
Senior Program Manager

Hughes Aircraft Company 1986 - 1987
Director Asia Pacific Office, Tokyo, Japan

DARPA Mar 1983 - Sep 1986
Program Manager
Education:
University of California, Los Angeles 1960 - 1967
PhD, Solid State Physica
Skills:
Systems Engineering
Sensors
Engineering Management
Aerospace
Space Systems
Program Management
Earned Value Management
System Design
Optics
Requirements Management
System Architecture
Spacecraft
Simulations
Semiconductors
Embedded Systems
Languages:
English
Ken Ando Photo 2

Account Manager

View page
Industry:
Food Production
Work:
Premium
Account Manager

Business Records

Name / Title
Company / Classification
Phones & Addresses
Ken J. Ando
Managing
Ando LLC
Electro-Optical Engineering and Marketin
1155 N 1 St, San Jose, CA 95112

Publications

Isbn (Books And Publications)

Advanced Multispectral Remote Sensing Technology and Applications: May 6-7, 1982, Arlington, Virginia

View page
Author

Ken J. Ando

ISBN #

0892523808

Us Patents

Low Light Level Imager With Extended Wavelength Response Employing Atomic Bonded (Fused) Semiconductor Materials

View page
US Patent:
58083294, Sep 15, 1998
Filed:
Jul 15, 1996
Appl. No.:
8/680096
Inventors:
Michael D. Jack - Goleta CA
Ken J. Ando - Santa Barbara CA
Kenneth Kosai - Goleta CA
David R. Rhiger - Santa Barbara CA
Assignee:
Raytheon Company - Lexington MA
International Classification:
H01L 310328
H01L 310336
H01L 31072
H01L 31109
US Classification:
257188
Abstract:
An imaging device (10, 10') has a plurality of unit cells (11) that contribute to forming an image of a scene. The imaging device includes a layer of wide bandgap semiconductor (18) material (e. g. , silicon) having photogate charge-mode readout circuitry (20, 22, 24), such as CCD or CMOS circuitry, disposed upon a first surface of the layer. In one embodiment a second, opposing surface of the layer is bonded at a heterojunction interface or atomic bonding layer (16) to a surface of a layer of narrower bandgap semiconductor material (e. g. , InGaAs or HgCdTe), that is selected for absorbing electromagnetic radiation having wavelengths longer than about one micrometer (i. e. , the NIR or longer) and for generating charge carriers. The generated charge carriers are transported across the heterojunction interface for collection by the photogate charge-mode readout circuitry. The layer of narrower bandgap material may be disposed upon a surface of a transparent substrate, and also may be differentiated into a plurality of mesa structures (14a).
Ken J Ando from Santa Barbara, CA, age ~85 Get Report