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Neal J Mellen

from Tempe, AZ
Age ~69
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Also known as:
Neal Kathleen Mellen, Neal J Mellon
Phone and address:
1207 Northshore Dr, Tempe, AZ 85283
Related to:
Alice D MellenJames Burgess, 54Courtney K Aros, 37Charles BurgessStephen BurgessRoy Aros, 55
Connected to:
Anne G Mellen, 67Carol M Mellen, 68Chanda R Mellenbruch, 48Donna M Mellen, 59Erin M Mellen, 79George J Mellen, 63Lance B Mellenbruch, 68Michelle M Mellencamp, 66Randall Mellen, 94Shelly Mellencamp, 43

Neal Mellen Phones & Addresses

  • 1207 Northshore Dr, Tempe, AZ 85283
  • 633 Southern Ave, Tempe, AZ 85282
  • Rapid City, SD
  • Minneapolis, MN
  • Lyons, IL
  • Maricopa, AZ
  • Albuquerque, NM

Work

Company: Tdk r&d corporation - Phoenix, AZ 2001 Position: Senior vp

Education

School / High School: ARIZONA STATE UNIVERSITY- Tempe, AZ 1982

Resumes

Resumes

Neal Mellen Photo 1

Neal Mellen Tempe, AZ

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Work:
TDK R&D Corporation
Phoenix, AZ
2001 to 2012
Senior VP
MOTOROLA
Tempe, AZ
1997 to 2001
Program Manager
MOTOROLA

1982 to 2001
Various Positions
MOTOROLA
Albuquerque, NM
1993 to 1997
Product Manager
MOTOROLA
Tempe, AZ
1991 to 1993
Staff Scientist
MOTOROLA
Tempe, AZ
1986 to 1991
Wafer Fab Manager
MOTOROLA
Phoenix, AZ
1982 to 1986
InGaAsP Section Manager

Business Records

Name / Title
Company / Classification
Phones & Addresses
Neal Mellen
Manager
WIRELESS SPECTRUM MANAGMENT, LLC
925 W Baseline Rd #105-C8, Tempe, AZ 85283
Neal Mellen
Vice-President
The Burkhart Dental Supply Co
Whol Professional Dental Equipment and Supplies
4625 E Cotton Ctr Blvd, Phoenix, AZ 85040
(602) 437-1701

Publications

Us Patents

High Power Surface Acoustic Wave Device

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US Patent:
6452305, Sep 17, 2002
Filed:
Mar 14, 2000
Appl. No.:
09/524894
Inventors:
Neal J. Mellen - Tempe AZ
Shouliang Lai - Albuquerque NM
Assignee:
Motorola, Inc. - Schaumburg IL
International Classification:
H01L 4104
US Classification:
310313R
Abstract:
A high power SAW device includes an electrode positioned on a piezoelectric substrate. The electrode includes a bonding layer of material deposited on and bonding with the substrate and a conductive structure, of at least one layer of material, overlying the bonding layer and fixedly bonded to the substrate by the bonding layer. The conductive structure includes aluminum and an alloy metal with the alloy metal being in a range from approximately 1% by weight to a percent providing for a fravorable trade-off of resistivity versus mechanical properties. The alloy metal is selected from elements in one of the IV and VI columns of the periodic table, e. g. titanium, molybdenum, chromium, and tungsten.

Method Of Fabricating A Silicon Carbide Vertical Mosfet And Device

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US Patent:
54517974, Sep 19, 1995
Filed:
Jan 9, 1995
Appl. No.:
8/370143
Inventors:
Kenneth L. Davis - Tempe AZ
Charles E. Weitzel - Mesa AZ
Neal J. Mellen - Tempe AZ
Assignee:
Motorola, Inc. - Schaumburg IL
International Classification:
H01L 29161
H01L 2920
H01L 2922
H01L 2910
US Classification:
257 77
Abstract:
A silicon carbide vertical MOSFET formed on a silicon carbide substrate with portions of epitaxial layers defining the various transistor electrodes, rather than defining the electrodes with implants and diffusion. An opening is formed in some of the epitaxial layers and a conductive layer is formed therein to electrically connect a drain contact on the rear of the substrate to the components on the front of the substrate.

Method For Providing Impurities Into A Carrier Gas Line

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US Patent:
47175974, Jan 5, 1988
Filed:
Mar 21, 1986
Appl. No.:
6/842690
Inventors:
Eric S. Johnson - Scottsdale AZ
Neal J. Mellen - Tempe AZ
Assignee:
Motorola Inc. - Schaumburg IL
International Classification:
C23C 1630
US Classification:
437 81
Abstract:
A permeable tube is inserted in a processing gas line to allow impurities surrounding the permeable tube to enter the processing line. By plumbing a steel tube in parallel with the permeable tube the process carrier gas can be switched from one tube to the other in rapid succession to allow pure or impure gases to enter into a reaction chamber. This can permit the growth of alternating layers of differently doped materials. As an example, it has been discovered that incorportaing small amounts of oxygen into an AlGaAs layer will produce a semi-insulating layer.

Modulation Doped Field Effect Transistor

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US Patent:
53998871, Mar 21, 1995
Filed:
May 3, 1994
Appl. No.:
8/238081
Inventors:
Charles E. Weitzel - Mesa AZ
Neal Mellen - Corrales NM
Kenneth L. Davis - Tempe AZ
Paige Holm - Phoenix AZ
Assignee:
Motorola, Inc. - Schaumburg IL
International Classification:
H01L 29161
H01L 29205
H01L 29225
US Classification:
257194
Abstract:
A modulation doped field effect transistor (10) is formed to have a drain (28, 12, 11) that is vertically displaced from the source (16, 17) and channel (20, 21) regions. The transistor (10) has the source (16, 17), channel (20, 21) and a portion of the drain (28) arranged laterally so that current (27) flows from the source (16, 17) laterally to the drain (28, 12, 11). A heterojunction layer (18) on the channel region (20, 21) facilitates forming a two dimensional electron gas in the channel (20, 21) region which provides the transistor (10) with a high transconductance.

Method Of Fabricating A Silicon Carbide Vertical Mosfet

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US Patent:
53977173, Mar 14, 1995
Filed:
Jul 12, 1993
Appl. No.:
8/090858
Inventors:
Kenneth L. Davis - Tempe AZ
Charles E. Weitzel - Mesa AZ
Neal J. Mellen - Tempe AZ
Assignee:
Motorola, Inc. - Schaumburg IL
International Classification:
H01L 2120
H01L 21335
US Classification:
437 40
Abstract:
A silicon carbide vertical MOSFET formed on a silicon carbide substrate with portions of epitaxial layers defining the various transistor electrodes, rather than defining the electrodes with implants and diffusion. An opening is formed in some of the epitaxial layers and a conductive layer is formed therein to electrically connect a drain contact on the rear of the substrate to the components on the front of the substrate.
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Neal J Mellen from Tempe, AZ, age ~69 Get Report