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Oleg M Mryasov

from Cupertino, CA
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Also known as:
Oleg N Mryasov, O Mryasov
Phone and address:
10697 Rosewood Rd UNIT C, Cupertino, CA 95014
Connected to:
Vivian Mrykalo, 42Margaret MrzykJessica L Ms, 36Mohamed B Msakni, 61Anita L Mseis, 64Gugu E Msibi, 57Theresa V Mszar, 72Mark S Mszyco, 66Tendayi A Mtangi, 54Mamoya E Mthembu, 38

Oleg Mryasov Phones & Addresses

  • 10697 Rosewood Rd UNIT C, Cupertino, CA 95014
  • Tuscaloosa, AL
  • 615 Edgewood Rd, Bradfordwoods, PA 15015
  • Evanston, IL
  • Albany, CA
  • 1865 Gaineswood Dr, Tuscaloosa, AL 35406

Work

Company: The university of alabama Position: Associate professor

Skills

Simulations

Industries

Higher Education

Resumes

Resumes

Oleg Mryasov Photo 1

Associate Professor

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Location:
Tuscaloosa, AL
Industry:
Higher Education
Work:
The University of Alabama
Associate Professor
Skills:
Simulations

Business Records

Name / Title
Company / Classification
Phones & Addresses
Oleg Mryasov
Snami LLC
Technology Consulting
Tuscaloosa, AL

Publications

Us Patents

Storage Device Including A Memory Cell Having Multiple Memory Layers

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US Patent:
20090268506, Oct 29, 2009
Filed:
Apr 25, 2008
Appl. No.:
12/110099
Inventors:
Michael Allen Seigler - Pittsburgh PA, US
Oleg N. Mryasov - Bradford Woods PA, US
Assignee:
Seagate Technology LLC - Scotts Valley CA
International Classification:
G11C 11/00
US Classification:
365148
Abstract:
In a particular illustrative embodiment, a storage device includes a controller and a plurality of resistive elementary memory cells accessible via the controller. Each resistive elementary memory cell of the plurality of resistive elementary memory cells includes a plurality of memory layers selected to have hysteretic properties to store multiple data values.

Modular Magnetoresistive Memory

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US Patent:
20090067225, Mar 12, 2009
Filed:
Jan 4, 2008
Appl. No.:
11/969248
Inventors:
Oleg N. Mryasov - Bradford Woods PA, US
Thomas F. Ambrose - Sewickley PA, US
Werner Scholz - Pittsburgh PA, US
Assignee:
Seagate Technology LLC - Scotts Valley CA
International Classification:
G11C 11/02
US Classification:
365158
Abstract:
A magnetoresistive memory element has a read module with a first pinned layer that has a magnetoresistance that is readable by a read current received from an external circuit. The element has a write module that receives a write current from the external circuit. A coupling module adjacent both the write module and the read module has a free layer that functions as a shared storage layer for both the read module and the write module. The shared storage layer receives spin torque from both the read module and the write module and has a magnetization that is rotatable by the write current.

Data Storage Apparatus Including Optically Active Nano-Patterned Media And Electric Field Assisted Recording Method

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US Patent:
20080144206, Jun 19, 2008
Filed:
Dec 18, 2006
Appl. No.:
11/640708
Inventors:
Oleg N. Mryasov - Bradford Woods PA, US
Ibrahim Kursat Sendur - Framingham MA, US
Assignee:
Seagate Technology LLC - Scotts Valley CA
International Classification:
G11B 5/02
US Classification:
360 59
Abstract:
An apparatus comprises a data storage medium including a magnetic recording element and an optically active material positioned adjacent to the magnetic recording element, an electric field source for applying an electric field to a portion of the data storage medium, a source of electromagnetic radiation for irradiating the data storage medium, and a magnetic field source for applying a magnetic field to the portion of the data storage medium.

Modular Magnetoresistive Memory

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US Patent:
20110007558, Jan 13, 2011
Filed:
Sep 13, 2010
Appl. No.:
12/881072
Inventors:
Oleg N. Mryasov - Bradford Woods PA, US
Thomas F. Ambrose - Sewickley PA, US
Werner Scholz - Pittsburgh PA, US
Assignee:
SEAGATE TECHNOLOGY LLC - Scotts Valley CA
International Classification:
G11C 11/00
US Classification:
365158
Abstract:
A magnetoresistive memory element is provided with a read module having a first pinned layer with a magnetoresistance that is readable by a read current received from an external circuit. A write module has a nanocontact that receives a write current from the external circuit and, in turn, imparts a spin torque to a free layer that functions as a shared storage layer for both the read module and the write module.
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Oleg M Mryasov from Cupertino, CA Get Report