Paul H Berdahl

6809066, Oct 26, 2004

Jul 30, 2001

09/918395

Ronald P. Reade - Berkeley CA
Paul H. Berdahl - Walnut Creek CA
Richard E. Russo - Walnut Creek CA
Leslie G. Fritzemeier - Mendon MA

The Regents of the University of California - Oakland CA

C23C 1432

505411, 505320, 505325, 505470, 505473, 505474, 505475, 20419234, 20419235, 20419211, 20429804, 20429836, 15634539, 216 66

Ion texturing methods and articles are disclosed.

6821338, Nov 23, 2004

Dec 15, 2000

09/739391

Ronald P. Reade - Berkeley CA
Paul H. Berdahl - Walnut Creek CA
Richard E. Russo - Walnut Creek CA

The Regents of the University of California - Oakland CA

C30B 106

117 4, 117 7, 117 16, 117944, 117945, 117941

The invention provides a method of increasing the extent of a desired biaxial orientation of a previously formed non-single-crystal structure by contacting said structure with an oblique particle beam thereby forming in the structure a nucleating surface having increased desired biaxial orientation. The method can further include a step of epitaxially growing the crystalline formation using the nucleating surface to promote the epitaxial growth. The invention also provides a crystalline structure containing a nucleating surface formed by contacting a previously formed non-single-crystal structure with an oblique particle beam, from 0 to 10 adjacent orientation-transmitting layers, and a crystalline active layer. In this structure, the active layer is oriented in registry with the nucleating surface.

20030019668, Jan 30, 2003

Jul 27, 2001

09/917321

Ronald Reade - Berkeley CA, US
Paul Berdahl - Walnut Creek CA, US
Richard Russo - Walnut Creek CA, US

C30B025/00
G01G013/22
C30B028/12
C30B028/14
C30B023/00

177/084000, 117/103000

The invention provides a method of increasing the extent of a desired biaxial orientation of a previously formed non-single-crystal structure by contacting said structure with an oblique particle beam thereby forming in the structure a nucleating surface having increased desired biaxial orientation. The method can further include a step of epitaxially growing the crystalline formation using the nucleating surface to promote the epitaxial growth. The invention also provides a crystalline structure containing a nucleating surface formed by contacting a previously formed non-single-crystal structure with an oblique particle beam, from 0 to 10 adjacent orientation-transmitting layers, and a crystalline active layer. In this structure, the active layer is oriented in registry with the nucleating surface.

20130287966, Oct 31, 2013

Mar 14, 2013

13/827772

Thomas Kirchstetter - Oakland CA, US
Hugo Destaillats - Scottsdale AZ, US
Ronnen Levinson - Berkeley CA, US
Paul Berdahl - Walnut Creek CA, US
Hashem Akbari - Lafayette CA, US

The Regents of the University of California - Oakland CA

C09D 7/12
B05D 3/06

427558, 10628724

This disclosure provides systems, methods, and apparatus related to simulated soiling and weathering of materials. In one aspect, a soiling mixture may include an aqueous suspension of various amounts of salt, soot, dust, and humic acid. In another aspect, a method may include weathering a sample of material in a first exposure of the sample to ultraviolet light, water vapor, and elevated temperatures, depositing a soiling mixture on the sample, and weathering the sample in a second exposure of the sample to ultraviolet light, water vapor, and elevated temperatures.

46286950, Dec 16, 1986

Sep 28, 1984

6/655500

Paul H. Berdahl - Oakland CA

The United States of America as represented by the United States
Department of Energy - Washington DC

F25B 2102

62 3

A solid state radiative heat pump (10, 50, 70) operable at room temperature (300. degree. K. ) utilizes a semiconductor having a gap energy in the range of 0. 03-0. 25 eV and operated reversibly to produce an excess or deficit of charge carriers as compared to thermal equilibrium. In one form of the invention (10, 70) an infrared semiconductor photodiode (21, 71) is used, with forward or reverse bias, to emit an excess or deficit of infrared radiation. In another form of the invention (50), a homogeneous semiconductor (51) is subjected to orthogonal magnetic and electric fields to emit an excess or deficit of infrared radiation. Three methods of enhancing transmission of radiation through the active surface of the semiconductor are disclosed. In one method, an anti-reflection layer (19) is coated into the active surface (13) of the semiconductor (11), the anti-reflection layer (19) having an index of refraction equal to the square root of that of the semiconductor (11). In the second method, a passive layer (75) is spaced from the active surface (73) of the semiconductor (71) by a submicron vacuum gap, the passive layer having an index of refractive equal to that of the semiconductor.

54321514, Jul 11, 1995

Jul 12, 1993

8/090422

Richard E. Russo - Walnut Creek CA
Ronald P. Reade - Berkeley CA
Stephen M. Garrison - Palo Alto CA
Paul Berdahl - Oakland CA

Regents of the University of California - Oakland CA

B05D 306
B05D 512

505474

A process for depositing a biaxially aligned intermediate layer over a non-single crystal substrate is disclosed which permits the subsequent deposition thereon of a biaxially oriented superconducting film. The process comprises depositing on a substrate by laser ablation a material capable of being biaxially oriented and also capable of inhibiting the migration of substrate materials through the intermediate layer into such a superconducting film, while simultaneously bombarding the substrate with an ion beam. In a preferred embodiment, the deposition is carried out in the same chamber used to subsequently deposit a superconducting film over the intermediate layer. In a further aspect of the invention, the deposition of the superconducting layer over the biaxially oriented intermediate layer is also carried out by laser ablation with optional additional bombardment of the coated substrate with an ion beam during the deposition of the superconducting film.

58111808, Sep 22, 1998

Mar 27, 1996

8/622981

Paul H. Berdahl - Oakland CA

The Regents of the University of California - Oakland CA

B32B 516

428324

Conventional paints transmit or absorb most of the intense infrared (IR) radiation emitted by fire, causing them to contribute to the spread of fire. The present invention comprises a fire retardant paint additive that reflects the thermal IR radiation emitted by fire in the 1 to 20 micrometer (. mu. m) wavelength range. The important spectral ranges for fire control are typically about 1 to about 8. mu. m or, for cool smoky fires, about 2. mu. m to about 16. mu. m. The improved inventive coatings reflect adverse electromagnetic energy and slow the spread of fire. Specific IR reflective pigments include titanium dioxide (rutile) and red iron oxide pigments with diameters of about 1. mu. m to about 2. mu. m and thin leafing aluminum flake pigments.

45863504, May 6, 1986

Sep 14, 1984

6/650593

Paul H. Berdahl - Oakland CA

The United States of America as represented by the United States
Department of Energy - Washington DC

F25B 2102

62467

A material for a wavelength-selective radiative cooling system, the material comprising an infrared-reflective substrate coated with magnesium oxide and/or lithium fluoride in a polycrystalline form. The material is non-absorptive for short wavelengths, absorptive from 8 to 13 microns, and reflective at longer wavelengths. The infrared-reflective substrate inhibits absorption at wavelengths shorter than 8 microns, and the magnesium oxide and/or lithium fluoride layers reflect radiation at wavelengths longer than 13 microns.