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Robert E Kaim

from Brookline, MA
Age ~73
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Also known as:
Robert Esra Kaim, Robert F Kaim, Robt E Kaim, Bob E Kaim, Rob E Kaim
Phone and address:
762 Washington St, Brookline, MA 02446
(617) 734-9163
Related to:
Robert G Fox, 75
Connected to:
Adam J Kaim, 96Amit Kaim, 47Anthony Kaim, 48Kim S Kaiman, 54Stanley E Kaimowitz, 84Benjamin P Kain, 47Brooke A Kain, 33Devin M Kain, 42Diane F Kain, 79Jerryl L Kain, 62

Robert Kaim Phones & Addresses

  • 762 Washington St, Brookline, MA 02446 (617) 734-9163
  • Somerville, MA
  • Beverly, MA
  • Amherst, MA

Business Records

Name / Title
Company / Classification
Phones & Addresses
Robert E. Kaim
President
BROOKLINE TECHNICAL ASSOCIATES, INC
762 Washington St, Brookline, MA 02446
Robert Esra Kaim
President
KW TECHNOLOGY CORPORATION
762 Washington St, Brookline, MA 02446

Publications

Us Patents

Radial Scan Arm And Collimator For Serial Processing Of Semiconductor Wafers With Ribbon Beams

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US Patent:
7057192, Jun 6, 2006
Filed:
Feb 2, 2005
Appl. No.:
11/049264
Inventors:
Robert E. Kaim - Brookline MA, US
Nicholas R. White - Manchester MA, US
International Classification:
H01J 37/20
US Classification:
25049221, 25044211
Abstract:
Semiconductor wafers are sequentially mounted on a holder at one end of an arm which is pivoted about its other end. Each wafer is thereby passed on an arcuate path through a parallel-scanned or continuous ribbon-shaped beam for processing. The pivot axis is parallel to the centroid of the beam trajectories. By pre-orienting the wafers before loading, and by providing a second pivot between the arm and the holder, the angle between the beam and the wafer surface may be precisely adjusted to any arbitrary angle of interest. The geometry is such that this angle is constant over the processed area. Uniform processing requires a scanned ribbon beam to have a non-uniform scan velocity and a continuous ribbon beam to have a non-uniform intensity profile. The required non-uniformity is generated by a suitably shaped collimating magnet. When a suitable ribbon beam is unavailable, a beam of approximately circular shape may be used by translating the pivot axis, thereby moving the wafer in a two-dimensional pattern through the beam.

Methods For Cleaning Ion Implanter Components

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US Patent:
7819981, Oct 26, 2010
Filed:
Oct 26, 2004
Appl. No.:
10/973673
Inventors:
Frank DiMeo, Jr. - Danbury CT, US
James Dietz - Scarsdale NY, US
W. Karl Olander - Indian Shores FL, US
Robert Kaim - Brookline MA, US
Steven E. Bishop - Rio Rancho NM, US
Jeffrey W. Neuner - Bethel CT, US
Jose I. Arno - Brookfield CT, US
Assignee:
Advanced Technology Materials, Inc. - Danbury CT
International Classification:
B08B 6/00
US Classification:
134 12, 134 11
Abstract:
A method and apparatus for cleaning residue from components of an ion source region of an ion implanter used in the fabrication of microelectronic devices. To effectively remove residue, the components are contacted with a gas-phase reactive halide composition for sufficient time and under sufficient conditions to at least partially remove the residue. The gas-phase reactive halide composition is chosen to react selectively with the residue, while not reacting with the components of the ion source region or the vacuum chamber.

Boron Ion Implantation Using Alternative Fluorinated Boron Precursors, And Formation Of Large Boron Hydrides For Implantation

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US Patent:
7943204, May 17, 2011
Filed:
Aug 30, 2006
Appl. No.:
12/065503
Inventors:
W. Karl Olander - Indian Shores FL, US
Jose I. Arno - Brookfield CT, US
Robert Kaim - Brookline MA, US
Assignee:
Advanced Technology Materials, Inc. - Danbury CT
International Classification:
C23C 14/48
H01L 21/425
C23C 16/48
US Classification:
427523, 427526, 427527, 438514, 438515, 438798
Abstract:
Methods of implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. A method of manufacturing a semiconductor device including implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. Also disclosed are a system for supplying a boron hydride precursor, and methods of forming a boron hydride precursor and methods for supplying a boron hydride precursor. In one implementation of the invention, the boron hydride precursors are generated for cluster boron implantation, for manufacturing semiconductor products such as integrated circuitry.

Fluid Storage And Dispensing System Including Dynamic Fluid Monitoring Of Fluid Storage And Dispensing Vessel

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US Patent:
7966879, Jun 28, 2011
Filed:
Oct 24, 2005
Appl. No.:
11/577864
Inventors:
James Dietz - Scarsdale NY, US
Steven E. Bishop - Rio Rancho NM, US
James V. McManus - Bethel CT, US
Steven M. Lurcott - Sherman CT, US
Michael J. Wodjenski - New Milford CT, US
Robert Kaim - Brookline MA, US
Frank Dimeo, Jr. - Falls Church VA, US
Assignee:
Advanced Technology Materials, Inc. - Danbury CT
International Classification:
G01F 23/00
US Classification:
73313
Abstract:
A monitoring system () for monitoring fluid in a fluid supply vessel () during operation including dispensing of fluid from the fluid supply vessel. The monitoring system includes (i) one or more sensors () for monitoring a characteristic of the fluid supply vessel or the fluid dispensed therefrom, (ii) a data acquisition module () operatively coupled to the one or more sensors to receive monitoring data therefrom and responsively generate an output correlative to the characteristic monitored by the one or more sensors, and (iii) a processor () and display () operatively coupled with the data acquisition module and arranged to process the output from the data acquisition module and responsively output a graphical representation of fluid in the fluid supply vessel, billing documents, usage reports, and/or resupply requests.

Isotopically-Enriched Boron-Containing Compounds, And Methods Of Making And Using Same

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US Patent:
8062965, Nov 22, 2011
Filed:
Mar 15, 2011
Appl. No.:
13/048367
Inventors:
Robert Kaim - Brookline MA, US
Joseph D. Sweeney - Winsted CT, US
Oleg Byl - Southbury CT, US
Sharad N. Yedave - Danbury CT, US
Edward E. Jones - Woodbury CT, US
Peng Zou - Ridgefield CT, US
Ying Tang - Brookfield CT, US
Barry Lewis Chambers - Midlothian VA, US
Richard S. Ray - New Milford CT, US
Assignee:
Advanced Technology Materials, Inc. - Danbury CT
International Classification:
H01L 21/26
H01L 21/42
US Classification:
438513, 438525, 438535
Abstract:
An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of BF. Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.

Isotopically-Enriched Boron-Containing Compounds, And Methods Of Making And Using Same

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US Patent:
8138071, Mar 20, 2012
Filed:
Oct 27, 2010
Appl. No.:
12/913721
Inventors:
Robert Kaim - Brookline MA, US
Joseph D. Sweeney - Winsted CT, US
Oleg Byl - Southbury CT, US
Sharad N. Yedave - Danbury CT, US
Edward E. Jones - Woodbury CT, US
Peng Zou - Ridgefield CT, US
Ying Tang - Brookfield CT, US
Barry Lewis Chambers - Midlothian VA, US
Richard S. Ray - New Milford CT, US
Assignee:
Advanced Technology Materials, Inc. - Danbury CT
International Classification:
H01L 21/26
H01L 21/42
US Classification:
438513, 438525, 438535, 257E21311
Abstract:
An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of BF. Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.

Method And Apparatus For Enhanced Lifetime And Performance Of Ion Source In An Ion Implantation System

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US Patent:
8237134, Aug 7, 2012
Filed:
Feb 21, 2012
Appl. No.:
13/401527
Inventors:
Robert Kaim - Brookline MA, US
Joseph D. Sweeney - Winsted CT, US
Anthony M. Avila - Austin TX, US
Richard S. Ray - New Milford CT, US
Assignee:
Advanced Technology Materials, Inc. - Danbury CT
International Classification:
H01J 37/317
H01L 21/265
US Classification:
25049221, 250423 R, 2504923, 2504931, 31511181, 427523
Abstract:
An ion implantation system and process, in which the performance and lifetime of the ion source of the ion implantation system are enhanced, by utilizing isotopically enriched dopant materials, or by utilizing dopant materials with supplemental gas(es) effective to provide such enhancement.

Boron Ion Implantation Using Alternative Fluorinated Boron Precursors, And Formation Of Large Boron Hydrides For Implantation

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US Patent:
8389068, Mar 5, 2013
Filed:
Oct 27, 2010
Appl. No.:
12/913757
Inventors:
W. Karl Olander - Indian Shores FL, US
Jose I. Arno - Brookfield CT, US
Robert Kaim - Brookline MA, US
Assignee:
Advanced Technology Materials, Inc. - Danbury CT
International Classification:
C23C 14/48
C23C 14/06
H01L 21/04
H01L 21/425
C23C 14/16
US Classification:
427523, 427526, 427527, 427530, 438510, 438514, 438515, 438766, 438798
Abstract:
Methods of implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. A method of manufacturing a semiconductor device including implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. Also disclosed are a system for supplying a boron hydride precursor, and methods of forming a boron hydride precursor and methods for supplying a boron hydride precursor. In one implementation of the invention, the boron hydride precursors are generated for cluster boron implantation, for manufacturing semiconductor products such as integrated circuitry.
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Robert E Kaim from Brookline, MA, age ~73 Get Report