Thomas Mitchell Sibley

55144390, May 7, 1996

Oct 14, 1994

8/323265

Thomas Sibley - Dallas TX

B32B 302

428 641

A fixture for supporting a semiconductor wafer during rapid thermal processing, comprising a two-piece assembly of parts, one of which is a silicon carbide wafer support section having a wafer contact face shaped by direct contact with a mold, during its formation by chemical vapor deposition. The other piece is a holding section shaped to keep the wafer support section in place within the reactor. The two-piece assembly improves thermal performance, compared with a one-piece fixture, because the rate of heat conduction across the gap between parts is always less than the rate of heat conduction through a one-piece fixture having the same dimensions.

57763917, Jul 7, 1998

Jun 18, 1996

8/668449

Thomas Sibley - Dallas TX

C04B 35565
B23Q 300

264 81

A single piece, high purity, full density semiconductor wafer holding fixture for holding a multiplicity of wafers and consisting essentially of chemical vapor deposited silicon carbide (CVD SiC). The wafer carrier is advantageous for the fabrication of electronic integrated circuits where high temperatures and/or corrosive chemicals present, where dimensional stability of the holder is advantageous to the process or where introduction of contaminating elements is deleterious to the process. The method for making such an article comprises shaping a substrate, e. g. graphite, which on one surface has the form of the desired shape, said form comprising raised longitudinal sections to support the silicon wafers at the edges of the wafers, chemically vapor depositing a layer of silicon carbide onto the substrate, removing the substrate intact or by burning, machining, grinding, gritblasting and/or dissolving, and grinding the silicon carbide in any areas where a more precise dimension is required.

55382304, Jul 23, 1996

Aug 8, 1994

8/286942

Thomas Sibley - Dallas TX

B23Q 300

269296

A single piece, high purity, full density semiconductor wafer holding fixture for holding a multiplicity of wafers and consisting essentially of chemical vapor deposited silicon carbide (CVD SiC). The wafer carrier is advantageous for the fabrication of electronic integrated circuits where high temperatures and/or corrosive chemicals present, where dimensional stability of the holder is advantageous to the process or where introduction of contaminating elements is deleterious to the process. The method for making such an article comprises shaping a substrate, e. g. graphite, which on one surface has the form of the desired shape, said form comprising raised longitudinal sections to support the silicon wafers at the edges of the wafers, chemically vapor depositing a layer of silicon carbide onto the substrate, removing the substrate intact or by burning, machining, grinding, gritblasting and/or dissolving, and grinding the silicon carbide in any areas where a more precise dimension is required.

54436494, Aug 22, 1995

Nov 22, 1994

8/343824

Thomas Sibley - Dallas TX

C23C 1600

118728

A single piece, high purity, full density semiconductor wafer holding fixture for holding a multiplicity of wafers and consisting essentially of chemical vapor deposited silicon carbide (CVD SiC). The wafer carrier is advantageous for the fabrication of electronic integrated circuits in a vertical furnace, where high temperatures and/or corrosive chemicals are present, where dimensional stability of the holder is advantageous to the process, and where introduction of contaminating elements is deleterious to the process. The method for making such an article comprises shaping a substrate, e. g. graphite, which on one surface has the form of the desired shape, said form comprising raised longitudinal sections to support the silicon wafers at the edges of the wafers, chemically vapor depositing a layer of silicon carbide onto the substrate, removing the substrate intact or by burning, machining, grinding, gritblasting and/or dissolving, and grinding the silicon carbide in any areas where a more precise dimension is required.