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Tienyu T Sheng

from Santa Clara, CA
Age ~66
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Also known as:
Tienyu Te Sheng, Tienyu Y Sheng, Tien Yu Sheng, Terry Sheng, Tien-Yu J Sheng, Teiny Sheng, Terry Tienyu Sheng, U Sheng
Related to:
Anna ShengYijin J Ye, 51Jia Lin, 58Miin Chang, 60Andrew Sheng, 35
Connected to:
Lei Sheng, 59Shun T Sheng, 82Tang W Sheng, 68Xu W Sheng, 64Ye E Sheng, 54Zhijuan Sheng, 60Christina M Shenk, 62Harold B Shenk, 85Jan L Shenk, 67Larry A Shenk, 83

Tienyu Sheng Phones & Addresses

  • Santa Clara, CA
  • Los Angeles, CA
  • San Jose, CA
  • Elk Grove, CA
  • 19911 Sea Gull Way, Saratoga, CA 95070 (408) 996-3951
  • Sacramento, CA
  • Cupertino, CA

Professional Records

License Records

Tienyu Terry Sheng

Address:
19911 Sea Gull Way, Saratoga, CA 95070
License #:
A3836973
Category:
Airmen

Business Records

Name / Title
Company / Classification
Phones & Addresses
Tienyu Sheng
Managing
Advanced Aquatech LLC
Selling Water Filtration Systems Water S · Mfg Process Control Instruments · Whol Computers/Peripherals
1923 Otoole Way, San Jose, CA 95131
(408) 577-1688, (408) 988-8278

Publications

Us Patents

Method And Device Of Ion Source Generation

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US Patent:
7687784, Mar 30, 2010
Filed:
May 23, 2008
Appl. No.:
12/126312
Inventors:
Nai-Yuan Cheng - Taipei, TW
Yun-Ju Yang - Taichung, TW
Cheng-Hui Shen - Hsinchu County, TW
Junhua Hong - San Jose CA, US
Jiong Chen - San Jose CA, US
Tienyu Sheng - Saratoga CA, US
Linuan Chen - San Jose CA, US
Assignee:
Advanced Ion Beam Technology, Inc. - Hsinchu
Advanced Ion Beam Technology, Inc. - San Jose CA
International Classification:
H01J 7/24
H01J 27/02
H01J 49/10
US Classification:
250423R, 250424, 250427, 25049221, 31511181, 31511191
Abstract:
An implanter is equipped with an ion beam current detector, a temperature sensor, a temperature controller and a cooling system to increase the ratio of a specific ion cluster in the ion source chamber of the implanter. Therefore, the implanting efficiency for a shallow ion implantation is increased consequently.

Apparatus For Obtaining Dose Uniformity In Plasma Doping (Plad) Ion Implantation Processes

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US Patent:
57118124, Jan 27, 1998
Filed:
Jun 6, 1995
Appl. No.:
8/469401
Inventors:
David LeRoy Chapek - Boise ID
Susan Benjamin Felch - Los Altos CA
Michael William Kissick - Madison WI
Shamim Muhammad Malik - Madison WI
Tienyu Terry Sheng - San Jose CA
Assignee:
Varian Associates, Inc. - Palo Alto CA
International Classification:
C23C 1600
US Classification:
118723E
Abstract:
An apparatus for improving dose uniformity in the PLAsma Doping (PLAD) ion implantation of a target material is described. By providing means for simultaneously biasing both the electrode, upon which the target is disposed, and a separately biasable concentric structure introduced about the electrode and sufficiently close to the target, together with means for adjustable bias variation between the electrode and the structure one can sufficiently adjust the shape of the implantation plasma, e. g. induced electric field and plasma sheath thickness, in order to effectively provide a uniform dose distribution during PLAD ion implantation processes.

Process Chemistry Resistant Manometer

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US Patent:
61325139, Oct 17, 2000
Filed:
Mar 31, 1999
Appl. No.:
9/283134
Inventors:
Babak Kadkhodayan - Oakland CA
Andreas Fischer - Fremont CA
Tienyu T. Sheng - Saratoga CA
Gregory A. Tomasch - San Jose CA
Assignee:
Lam Research Corporation - Fremont CA
International Classification:
C23C 1600
H05H 100
G01L 1900
US Classification:
118715
Abstract:
A manometer resistant to chemical change caused by process chemistry used in a plasma processing chamber is provided. The manometer includes a pressure sensitive diaphragm attached to a housing wherein at least a portion of the pressure sensitive diaphragm is rendered resistant to chemical change caused by process chemistry.

Method And Ion Implanter For Low Temperature Implantation

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US Patent:
20160203950, Jul 14, 2016
Filed:
Jan 13, 2015
Appl. No.:
14/595813
Inventors:
- Hsinchu, TW
Tzuyuan YIIN - Fremont CA, US
Tienyu SHENG - Saratoga CA, US
International Classification:
H01J 37/317
C23C 14/48
H01J 37/244
G01K 7/22
H01J 37/20
Abstract:
A method for a recipe of a low temperature implantation comprises: pre-cooling a workpiece transferred from a FOUP to a lower temperature to meet the recipe, implanting the workpiece according to the recipe, and post-heating the workpiece to a higher temperature before returning the workpiece to the FOUP. Further, an ion implanter comprising a process chamber, a FOUP, a cooling module and a heating module is provided. The workpiece can be implanted according to the recipe in the process chamber. The FOUP can transfer the workpiece toward and away from the process chamber. The cooling module is disposed outside the process chamber and can pre-cool the workpiece to the lower temperature to meet the recipe before implanting the workpiece. The heating module is disposed outside the process chamber and can post-heat the workpiece to the higher temperature before returning the workpiece to the FOUP.

Plasma-Based Material Modification Using A Plasma Source With Magnetic Confinement

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US Patent:
20150255242, Sep 10, 2015
Filed:
Mar 7, 2014
Appl. No.:
14/201747
Inventors:
- Hsin-Chu, TW
Stephen SAVAS - Pleasanton CA, US
Susan FELCH - Los Altos Hills CA, US
Tienyu SHENG - Saratoga CA, US
Hao CHEN - Fremont CA, US
Assignee:
ADVANCED ION BEAM TECHNOLOGY, INC. - Hsin-Chu
International Classification:
H01J 37/08
H01J 37/30
H01J 37/317
Abstract:
A plasma-based material modification system for material modification of a work piece may include a plasma source chamber coupled to a process chamber. A support structure, configured to support the work piece, may be disposed within the process chamber. The plasma source chamber may include a first plurality of magnets, a second plurality of magnets, and a third plurality of magnets that surround a plasma generation region within the plasma source chamber. The plasma source chamber may be configured to generate a plasma having ions within the plasma generation region. The third plurality of magnets may be configured to confine a majority of electrons of the plasma having energy greater than 10 eV within the plasma generation region while allowing ions from the plasma to pass through the third plurality of magnets into the process chamber for material modification of the work piece.
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Tienyu T Sheng from Santa Clara, CA, age ~66 Get Report