Inventors:
Nai-Yuan Cheng - Taipei, TW
Yun-Ju Yang - Taichung, TW
Cheng-Hui Shen - Hsinchu County, TW
Junhua Hong - San Jose CA, US
Jiong Chen - San Jose CA, US
Tienyu Sheng - Saratoga CA, US
Linuan Chen - San Jose CA, US
Assignee:
Advanced Ion Beam Technology, Inc. - Hsinchu
Advanced Ion Beam Technology, Inc. - San Jose CA
International Classification:
H01J 7/24
H01J 27/02
H01J 49/10
US Classification:
250423R, 250424, 250427, 25049221, 31511181, 31511191
Abstract:
An implanter is equipped with an ion beam current detector, a temperature sensor, a temperature controller and a cooling system to increase the ratio of a specific ion cluster in the ion source chamber of the implanter. Therefore, the implanting efficiency for a shallow ion implantation is increased consequently.