Search

Venkateswara A Sankaran

from Farmington Hills, MI
Age ~57

Venkateswara Sankaran Phones & Addresses

  • 29855 Fox Club Ct, Farmington Hills, MI 48331 (248) 661-6220
  • Farmington, MI
  • Oakland, MI
  • Dearborn, MI
  • West Columbia, SC

Publications

Us Patents

High Power Switching Module

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US Patent:
6359331, Mar 19, 2002
Filed:
Dec 23, 1997
Appl. No.:
08/997220
Inventors:
Lawrence Edward Rinehart - Milpitas CA
Venkateswara Anand Sankaran - Dearborn MI
John Michael Miller - Saline MI
Assignee:
Ford Global Technologies, Inc. - Dearborn MI
Semipower Systems Inc. - San Jose CA
International Classification:
H01L 2352
US Classification:
257691, 257692, 257693, 257696, 257728
Abstract:
A power switching module includes a substrate having at least one silicon die forming at least one power switching element and having leadframe terminal posts extending away therefrom. A planar negative rail layer providing a negative power supply and including a non-inductive current shunt resistor formed therein and a planar positive rail layer providing a positive power supply are positioned at the substrate so that the negative rail layer and the positive rail layer are coplanar with respect to each other. A phase output layer providing a phase output signal is also positioned at the substrate. Each of the layers are electrically isolated from each of the other layers and are electrically connected to the substrate.

System And Method For Monitoring The Operation Of A Power Converter

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US Patent:
6396674, May 28, 2002
Filed:
Apr 11, 2000
Appl. No.:
09/547360
Inventors:
Chingchi Chen - Ann Arbor MI
Venkateswara Anand Sankaran - Farmington Hills MI
Assignee:
Ford Global Technologies, Inc. - Dearborn MI
International Classification:
H02H 300
US Classification:
361 937, 361111
Abstract:
A fault detection circuit and method for monitoring a power converter system to identify faults. The detection circuit includes two comparator circuits each having one input connected to the dc bus of the power converter system and responsive to the voltage spikes that occur as a result of faults. The other inputs of the comparator circuits are respectively connected to first and second sources of reference voltages having preset limits. The outputs of the two comparator circuits are combined on an output lead, and a fault signal will be produced on the output lead when the voltage spike on the dc bus exceeds the limits.

Semiconductor Switch Fault Detection

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US Patent:
62976613, Oct 2, 2001
Filed:
Apr 19, 1999
Appl. No.:
9/294071
Inventors:
Chingchi Chen - Ann Arbor MI
Venkateswara Anand Sankaran - Farmington Hills MI
Assignee:
Ford Global Technologies, Inc. - Dearborn MI
International Classification:
G01R 3126
US Classification:
324769
Abstract:
A system and method for detecting various fault conditions in semiconductor devices. A variable voltage reference is compared to the voltage output of the device during device turn-on to detect circuit fault conditions. The fault condition is then communicated to a controller.

Suspension Damper With Integrated Controls

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US Patent:
53509838, Sep 27, 1994
Filed:
Dec 21, 1992
Appl. No.:
7/993561
Inventors:
John M. Miller - Saline MI
Venkateswara A. Sankaran - Dearborn MI
Assignee:
Ford Motor Company - Dearborn MI
International Classification:
B60G 17015
US Classification:
318254
Abstract:
An electrically powered active suspension system is disclosed having a suspension unit wherein the system controller and the power electronics module are integrated into a single housing with the motor mechanism of the suspension unit.

Signal Conditioning Circuit For Low Amplitude, High Common Mode Voltage Input Signals

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US Patent:
58617752, Jan 19, 1999
Filed:
Jan 16, 1997
Appl. No.:
8/784696
Inventors:
Chingchi Chen - Ann Arbor MI
Venkateswara Anand Sankaran - Farmington Hills MI
Assignee:
Ford Global Technologies, Inc. - Dearborn MI
International Classification:
H03F 345
G05F 100
US Classification:
330 69
Abstract:
A cost-effective conditioning circuit for extracting a weak, floating, wide-band signal with a low common-mode voltage from noisy environments is proposed that includes a high gain single ended operational amplifier to increase the amplitude of the signal. A simple, cost-effective approximately unity gain differential amplifier stage is used to level-shift the signal down to the desired reference potential. A typical application is a motor drive system, where the signals to be measured are bi-directional motor currents.

Power Block Assembly And Method Of Making Same

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US Patent:
59263725, Jul 20, 1999
Filed:
Dec 23, 1997
Appl. No.:
8/996641
Inventors:
Lawrence Edward Rinehart - Milpitas CA
Venkateswara Anand Sankaran - Dearborn MI
Walter Noll - Cottage Grove OR
Assignee:
Ford Global Technologies, Inc. - Dearborn MI
SemiPower Systems, Inc. - San Jose CA
International Classification:
H05K 720
US Classification:
361704
Abstract:
A substrate assembly for use with a high power switching module includes at least one power block having a base plate for providing mechanical rigidity for the power block. The power block also includes at least one silicon die mounted onto the base plate and configured to form at least one high power switching transistor having leads extending away therefrom. The power blocks are then supportably mounted into corresponding apertures in a rigid frame which mounts the power switching module onto a heat dissipating surface and tested independently before mounting into the frame at full load current and power, which cannot be performed at the bare die level.

Isolated Gate Driver For Power Switching Device And Method For Carrying Out Same

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US Patent:
59006838, May 4, 1999
Filed:
Dec 23, 1997
Appl. No.:
8/997198
Inventors:
Lawrence Edward Rinehart - Milpitas CA
Venkateswara Anand Sankaran - Dearborn MI
Assignee:
Ford Global Technologies, Inc. - Dearborn MI
Semipower Systems, Inc. - San Jose CA
International Classification:
H01H 3500
US Classification:
307129
Abstract:
An isolated gate driver device for a power switching device having a plurality of transistors includes a primary circuit having a voltage source of a first voltage potential. The primary circuit constantly switches the voltage source to generate first and second load signals based on control signals received from a microcontroller. The first load signal is modulated at a first frequency for enabling the transistors, and the second load signal is modulated at a second frequency, different from the first frequency, for disabling the transistors. A plurality of high frequency transformers corresponding to each of the transistors is coupled to the primary circuit. The transformers have a primary side for receiving one of the first and second load signals and a secondary side for transforming the one of the first and second load signals into corresponding signals at a second voltage potential. A secondary circuit coupled between each of the transformers and each of the corresponding transistors provides a bias power supply to each of the transistors at the second voltage potential. The secondary circuit also enables and disables each of the transistors based on the first and second load signals.

Integrated Power Module Diagnostic Unit

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US Patent:
55284469, Jun 18, 1996
Filed:
Jul 5, 1994
Appl. No.:
8/270611
Inventors:
Venkateswara Sankaran - Farmington Hills MI
Xingyi Xu - Canton MI
Assignee:
Ford Motor Company - Dearborn MI
International Classification:
H02H 504
US Classification:
361 25
Abstract:
An integrated power module combining drivers and power devices includes a diagnosis module integrated with or connected to the integrated power module. That includes protectors. The protectors provides protection against power device failure, transistor stack failure, gate drive failure, power failure, and other conditions. In a first level of diagnosis and protection, a gate driver is responsive to hard faults, such as short circuit and under voltage conditions, to disenable the power devices, for example, switching transistors of an inverter. In addition, the first level of protection includes soft faults, such as detection of overcurrent and over temperature in the power device, conditions that are merely reported to the controller, whereby the number and frequency of the events can be monitored. The second level of protection also provided by the diagnostic module may include power interlock to ensure that full power is being delivered to the integrated power module. The system permits detection of a transistor stack failure by monitoring the thermal resistance of the stack layers or junctions to detect physical degradation of the junctions and determine when the level of deterioration exceeds a pre-determined level.
Venkateswara A Sankaran from Farmington Hills, MI, age ~57 Get Report