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Wesley Allan Skinner

from Richmond, CA
Age ~46
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Also known as:
Wesley A Skinner, Wesley Allen Skinner, Wesley Te Skinner, Wesley A Dinan
Phone and address:
403 Mclaughlin St, Richmond, CA 94805
Related to:
James David Skinner, 53
Connected to:
Alice M Skinner, 68Annemarie P Skinner, 63Bell Skinner, 46Bryant B Skinner, 39Carroll B Skinner, 66Chandra Skinner, 57Charla SkinnerCharlotte A Skinner, 73Claire M Skinner, 71Cris W Skinner, 66

Wesley Skinner Phones & Addresses

  • 403 Mclaughlin St, Richmond, CA 94805
  • Oakland, CA
  • Somerville, MA
  • Morristown, NJ
  • Boston, MA
  • Goleta, CA
  • Union City, CA
  • 28 Westland Ave APT 18, Boston, MA 02115

Work

Position: Protective Service Occupations

Education

Degree: Graduate or professional degree

Resumes

Resumes

Wesley Skinner Photo 1

Wesley Skinner

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Wesley Skinner Photo 2

Wesley Skinner

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Wesley Skinner Photo 3

Press Supervisor At Topre America

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Location:
Cullman, Alabama
Industry:
Automotive
Work:
Topre America - Cullman, AL Jan 2012 - Jun 2012
Process Improvement Engineer
Crane Energy Flow Solutions Aug 2005 - Sep 2011
Buyer/Planner, Lean Manufacturing, and Continuous Improvement
Willo Products - Decatur, Alabama Area 2002 - 2005
Field Service Manager
Willo Products - Decatur, Alabama Area Sep 2002 - Feb 2004
Detention Sales / Project Manager
US Army - Fort Sill, OK 1998 - 2001
Multiple Launch Rocket Systems crew member/Armorer
Education:
Kaplan University 2009 - 2010
Wallace State 2001 - 2006
Skills:
Lean Manufacturing
Kaizen
Cellular Manufacturing
JIT
Pareto Analysis
Cycle Time Reduction
Value Stream Mapping
Toyota Production System
Heijunka
Process Improvement
Waste Reduction
Key Performance Indicators
Kanban
5S
Wesley Skinner Photo 4

Wesley Skinner

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Location:
United States

Business Records

Name / Title
Company / Classification
Phones & Addresses
Wesley Skinner
Yzzo Studios
Fine Art · Architect · Muralist · Custom Furniture · Metal Restoration · Welding · Wrought Iron
1960 Mandela Pkwy, Oakland, CA 94607
(415) 309-7487
Wesley Skinner
Managing
Superdoggies Pet Care, LLC
Pet Care, Dog Walking, Pet Sitting · Ret Misc Merchandise
2413 Carlson Blvd, Richmond, CA 94804

Publications

Us Patents

Method And Apparatus For Smoothing Thin Conductive Films By Gas Cluster Ion Beam

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US Patent:
6613240, Sep 2, 2003
Filed:
Dec 1, 2000
Appl. No.:
09/727881
Inventors:
Wesley J. Skinner - Andover MA
Allen R. Kirkpatrick - Lexington MA
Assignee:
Epion Corporation - Billerica MA
International Classification:
B44C 122
US Classification:
216 38, 118723 CB, 427 9, 427331, 20419211, 20419234, 20429804
Abstract:
A method and apparatus is disclosed that provided for the successful and precise smoothing of conductive films on insulating films or substrates. The smoothing technique provides a smooth surface that is substantially free of scratches. By supplying a source of electrons, harmful charging of the films and damage to the films are avoided.

Gcib Processing To Improve Interconnection Vias And Improved Interconnection Via

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US Patent:
6812147, Nov 2, 2004
Filed:
Oct 11, 2002
Appl. No.:
10/269605
Inventors:
Wesley J. Skinner - Andover MA
John J. Hautala - Beverly MA
Assignee:
Epion Corporation - Billerica MA
International Classification:
H01L 21302
US Classification:
438690, 438706
Abstract:
Reactive gas cluster ion beam processing using gas cluster ions comprising a mixture of gases cleans and/or etches the bottoms of electrical interconnect vias and/or trenches in integrated circuits to produce interconnect structures with lower contact resistances and better reliability than was previously achieved with conventional processes. In one embodiment, an electrical interconnect via structure uses a dielectric or high resistivity diffusion barrier material.

Methods Of Forming Doped And Un-Doped Strained Semiconductor Materials And Semiconductor Films By Gas-Cluster-Ion-Beam Irradiation And Materials And Film Products

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US Patent:
7259036, Aug 21, 2007
Filed:
Feb 14, 2005
Appl. No.:
11/057653
Inventors:
John O. Borland - South Hamilton MA, US
John J. Hautala - Beverly MA, US
Wesley J. Skinner - Andover MA, US
Martin D. Tabat - Nashua NH, US
Assignee:
TEL Epion Inc. - Billerica MA
International Classification:
H01L 21/00
H01L 21/322
US Classification:
438 37, 438 45, 438 87, 438473, 438474
Abstract:
Methods and apparatus are described for irradiating one or more substrate surfaces with accelerated gas clusters including strain-inducing atoms for blanket and/or localized introduction of such atoms into semiconductor substrates, with additional, optional introduction of dopant atoms and/or C. Processes for forming semiconductor films infused into and/or deposited onto the surfaces of semiconductor and/or dielectric substrates are also described. Such films may be doped and/or strained as well.

Formation Of Ultra-Shallow Junctions By Gas-Cluster Ion Irradiation

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US Patent:
7396745, Jul 8, 2008
Filed:
Mar 11, 2005
Appl. No.:
11/080800
Inventors:
John O. Borland - South Hamilton MA, US
John J. Hautala - Beverly MA, US
Wesley J. Skinner - Andover MA, US
Assignee:
TEL Epion Inc. - Billerica MA
International Classification:
H01L 21/425
US Classification:
438514, 438 45, 438659, 438798, 438513, 438515, 438516, 257E21466
Abstract:
Method of forming one or more doped regions in a semiconductor substrate and semiconductor junctions formed thereby, using gas cluster ion beams.

Formation Of Doped Regions And/Or Ultra-Shallow Junctions In Semiconductor Materials By Gas-Cluster Ion Irradiation

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US Patent:
7410890, Aug 12, 2008
Filed:
Jun 11, 2005
Appl. No.:
11/150698
Inventors:
Allen R. Kirkpatrick - Carlyle MA, US
Sean Kirkpatrick - Littleton MA, US
Martin D. Tabat - Nashua NH, US
Thomas G. Tetreault - Manchester NH, US
John O. Borland - South Hamilton MA, US
John J. Hautala - Beverly MA, US
Wesley J. Skinner - Andover MA, US
Assignee:
TEL Epion Inc. - Billerica MA
International Classification:
H01L 21/34
US Classification:
438510, 438513, 438514, 438515, 438516, 427523, 118723
Abstract:
Method of forming one or more doped regions in a semiconductor substrate and semiconductor junctions formed thereby, using gas cluster ion beams.

Methods For Modifying Features Of A Workpiece Using A Gas Cluster Ion Beam

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US Patent:
7626183, Dec 1, 2009
Filed:
Sep 5, 2007
Appl. No.:
11/850423
Inventors:
Reinhard Wagner - Ilmmuenster, DE
Wesley Skinner - Andover MA, US
Assignee:
TEL Epion Inc. - Billerica MA
International Classification:
G21K 5/04
G21K 5/10
US Classification:
25049221, 2504923, 257E21583, 2041923, 2041921, 20419234, 20429804, 20429836, 427534, 118723 CB, 216 66
Abstract:
Embodiments of methods of modifying surface features on a workpiece with a gas cluster ion beam are generally described herein. Other embodiments may be described and claimed.

Replacement Gate Field Effect Transistor With Germanium Or Sige Channel And Manufacturing Method For Same Using Gas-Cluster Ion Irradiation

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US Patent:
20060292762, Dec 28, 2006
Filed:
Jun 21, 2006
Appl. No.:
11/472136
Inventors:
John Borland - S. Hamilton MA, US
Wesley Skinner - Andover MA, US
Assignee:
Epion Corporation - Billerica MA
International Classification:
H01L 21/84
US Classification:
438151000
Abstract:
A self-aligned MISFET transistor (H) on a silicon substrate (), but having a graded SiGe channel or a Ge channel. The channel () is formed using gas-cluster ion beam () irradiation and provides higher channel mobility than conventional silicon channel MISFETs. A manufacturing method for such a transistor is based on a replacement gate process flow augmented with a gas-cluster ion beam processing step or steps to form the SiGe or Ge channel. The channel may also be doped by gas-cluster ion beam processing either as an auxiliary step or simultaneously with formation of the increased mobility channel.

Method Of Introducing Material Into A Substrate By Gas-Cluster Ion Beam Irradiation

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US Patent:
20080245974, Oct 9, 2008
Filed:
Jun 19, 2008
Appl. No.:
12/142453
Inventors:
Allen R. Kirkpatrick - Carlyle MA, US
Sean Kirkpatrick - Littleton MA, US
Martin D. Tabat - Nashua NH, US
Thomas G. Tetreault - Manchester NH, US
John O. Borland - South Hamilton MA, US
John J. Hautala - Beverly MA, US
Wesley J. Skinner - Andover MA, US
Assignee:
TEL EPION INC. - Billerica MA
International Classification:
H01J 37/08
US Classification:
25049221
Abstract:
Method of infusing or introducing material into a substrate using a gas cluster ion beam. The method includes maintaining a reduced-pressure environment around a substrate holder and holding a substrate securely within that reduced-pressure environment. A gas-cluster ion beam formed from a pressurized gas mixture including an inert gas and at least one other atomic or molecular specie is provided to the reduced-pressure environment and accelerated. In one embodiment, the method includes irradiating the accelerated gas-cluster ion beam onto one or more surface portions of the substrate to form an infused region or gas-cluster ion-impact region therein by introducing part or all of the atomic or molecular specie into the surface. In another embodiment, the method includes modifying at least one electrical property of the surface of the substrate by irradiating the accelerated gas-cluster ion beam onto one or more surface portions of the substrate.
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Wesley Allan Skinner from Richmond, CA, age ~46 Get Report