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Wesley J Skinner

from Andover, MA
Age ~64
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Also known as:
Wesley John Skinner, Wes J Skinner, Wes Skinnor
Phone and address:
9 Rutgers Rd, Andover, MA 01810
(978) 475-0401
Related to:
Margaret M Murphy
Connected to:
Alice M Skinner, 68Annemarie P Skinner, 63Bell Skinner, 46Bryant B Skinner, 38Carroll B Skinner, 66Chandra Skinner, 57Charla SkinnerCharlotte A Skinner, 73Claire M Skinner, 70Cris W Skinner, 66

Wesley Skinner Phones & Addresses

  • 9 Rutgers Rd, Andover, MA 01810 (978) 475-0401
  • 9 Southridge Cir, Andover, MA 01810 (978) 474-9159
  • San Jose, CA
  • San Francisco, CA
  • Medford, MA
  • Bristol, NH
  • 9 Rutgers Rd, Andover, MA 01810

Work

Position: Service Occupations

Education

Degree: High school graduate or higher

Resumes

Resumes

Wesley Skinner Photo 1

Wesley Skinner

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Wesley Skinner Photo 2

Wesley Skinner

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Location:
Andover, MA
Industry:
Semiconductors
Skills:
Semiconductors
Wesley Skinner Photo 3

Wesley Skinner

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Wesley Skinner Photo 4

Press Supervisor At Topre America

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Location:
Cullman, Alabama
Industry:
Automotive
Work:
Topre America - Cullman, AL Jan 2012 - Jun 2012
Process Improvement Engineer
Crane Energy Flow Solutions Aug 2005 - Sep 2011
Buyer/Planner, Lean Manufacturing, and Continuous Improvement
Willo Products - Decatur, Alabama Area 2002 - 2005
Field Service Manager
Willo Products - Decatur, Alabama Area Sep 2002 - Feb 2004
Detention Sales / Project Manager
US Army - Fort Sill, OK 1998 - 2001
Multiple Launch Rocket Systems crew member/Armorer
Education:
Kaplan University 2009 - 2010
Wallace State 2001 - 2006
Skills:
Lean Manufacturing
Kaizen
Cellular Manufacturing
JIT
Pareto Analysis
Cycle Time Reduction
Value Stream Mapping
Toyota Production System
Heijunka
Process Improvement
Waste Reduction
Key Performance Indicators
Kanban
5S
Wesley Skinner Photo 5

Marketing Mgr At Varian Semiconductor

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Location:
Greater Boston Area
Industry:
Semiconductors
Wesley Skinner Photo 6

Wesley Skinner

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Location:
United States

Business Records

Name / Title
Company / Classification
Phones & Addresses
Wesley Skinner
Yzzo Studios
Fine Art · Architect · Muralist · Custom Furniture · Metal Restoration · Welding · Wrought Iron
1960 Mandela Pkwy, Oakland, CA 94607
(415) 309-7487
Wesley Skinner
Managing
Superdoggies Pet Care, LLC
Pet Care, Dog Walking, Pet Sitting · Ret Misc Merchandise
2413 Carlson Blvd, Richmond, CA 94804

Publications

Us Patents

Method And Apparatus For Smoothing Thin Conductive Films By Gas Cluster Ion Beam

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US Patent:
6613240, Sep 2, 2003
Filed:
Dec 1, 2000
Appl. No.:
09/727881
Inventors:
Wesley J. Skinner - Andover MA
Allen R. Kirkpatrick - Lexington MA
Assignee:
Epion Corporation - Billerica MA
International Classification:
B44C 122
US Classification:
216 38, 118723 CB, 427 9, 427331, 20419211, 20419234, 20429804
Abstract:
A method and apparatus is disclosed that provided for the successful and precise smoothing of conductive films on insulating films or substrates. The smoothing technique provides a smooth surface that is substantially free of scratches. By supplying a source of electrons, harmful charging of the films and damage to the films are avoided.

Enhanced Etching/Smoothing Of Dielectric Surfaces

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US Patent:
6624081, Sep 23, 2003
Filed:
Oct 2, 2001
Appl. No.:
09/969559
Inventors:
Jerald P. Dykstra - Austin TX
Wesley J. Skinner - Andover MA
Allen R. Kirkpatrick - Lexington MA
Assignee:
Epion Corporation - Billerica MA
International Classification:
H01L 2120
US Classification:
438710, 1563451, 118723 CB, 31511181
Abstract:
A gas cluster ion beam (GCIB) etching process having a system for producing a gas cluster ion beam utilized to controllably etch a substrate. The gas cluster ion beam is initially directed along a preselected longitudinal axis. A portion of the GCIB etching apparatus is operably connected to the beam producing system and contains the substrate to be etched when impacted by said gas cluster ion beam. The portion of the GCIB etching apparatus includes a system for directing the gas cluster ion beam in a direction offset from the preselected longitudinal axis while permitting unwanted ionizing radiation to remain directed along the longitudinal axis. A substrate holder is located within a portion of the GCIB etching apparatus for positioning the substrate in line with the offset gas cluster ion beam during the etching process, and the unwanted ionizing radiation being substantially prevented from impinging upon the substrate during the etching process.

Gcib Processing To Improve Interconnection Vias And Improved Interconnection Via

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US Patent:
6812147, Nov 2, 2004
Filed:
Oct 11, 2002
Appl. No.:
10/269605
Inventors:
Wesley J. Skinner - Andover MA
John J. Hautala - Beverly MA
Assignee:
Epion Corporation - Billerica MA
International Classification:
H01L 21302
US Classification:
438690, 438706
Abstract:
Reactive gas cluster ion beam processing using gas cluster ions comprising a mixture of gases cleans and/or etches the bottoms of electrical interconnect vias and/or trenches in integrated circuits to produce interconnect structures with lower contact resistances and better reliability than was previously achieved with conventional processes. In one embodiment, an electrical interconnect via structure uses a dielectric or high resistivity diffusion barrier material.

Methods Of Forming Doped And Un-Doped Strained Semiconductor Materials And Semiconductor Films By Gas-Cluster-Ion-Beam Irradiation And Materials And Film Products

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US Patent:
7259036, Aug 21, 2007
Filed:
Feb 14, 2005
Appl. No.:
11/057653
Inventors:
John O. Borland - South Hamilton MA, US
John J. Hautala - Beverly MA, US
Wesley J. Skinner - Andover MA, US
Martin D. Tabat - Nashua NH, US
Assignee:
TEL Epion Inc. - Billerica MA
International Classification:
H01L 21/00
H01L 21/322
US Classification:
438 37, 438 45, 438 87, 438473, 438474
Abstract:
Methods and apparatus are described for irradiating one or more substrate surfaces with accelerated gas clusters including strain-inducing atoms for blanket and/or localized introduction of such atoms into semiconductor substrates, with additional, optional introduction of dopant atoms and/or C. Processes for forming semiconductor films infused into and/or deposited onto the surfaces of semiconductor and/or dielectric substrates are also described. Such films may be doped and/or strained as well.

Formation Of Ultra-Shallow Junctions By Gas-Cluster Ion Irradiation

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US Patent:
7396745, Jul 8, 2008
Filed:
Mar 11, 2005
Appl. No.:
11/080800
Inventors:
John O. Borland - South Hamilton MA, US
John J. Hautala - Beverly MA, US
Wesley J. Skinner - Andover MA, US
Assignee:
TEL Epion Inc. - Billerica MA
International Classification:
H01L 21/425
US Classification:
438514, 438 45, 438659, 438798, 438513, 438515, 438516, 257E21466
Abstract:
Method of forming one or more doped regions in a semiconductor substrate and semiconductor junctions formed thereby, using gas cluster ion beams.

Formation Of Doped Regions And/Or Ultra-Shallow Junctions In Semiconductor Materials By Gas-Cluster Ion Irradiation

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US Patent:
7410890, Aug 12, 2008
Filed:
Jun 11, 2005
Appl. No.:
11/150698
Inventors:
Allen R. Kirkpatrick - Carlyle MA, US
Sean Kirkpatrick - Littleton MA, US
Martin D. Tabat - Nashua NH, US
Thomas G. Tetreault - Manchester NH, US
John O. Borland - South Hamilton MA, US
John J. Hautala - Beverly MA, US
Wesley J. Skinner - Andover MA, US
Assignee:
TEL Epion Inc. - Billerica MA
International Classification:
H01L 21/34
US Classification:
438510, 438513, 438514, 438515, 438516, 427523, 118723
Abstract:
Method of forming one or more doped regions in a semiconductor substrate and semiconductor junctions formed thereby, using gas cluster ion beams.

Methods For Modifying Features Of A Workpiece Using A Gas Cluster Ion Beam

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US Patent:
7626183, Dec 1, 2009
Filed:
Sep 5, 2007
Appl. No.:
11/850423
Inventors:
Reinhard Wagner - Ilmmuenster, DE
Wesley Skinner - Andover MA, US
Assignee:
TEL Epion Inc. - Billerica MA
International Classification:
G21K 5/04
G21K 5/10
US Classification:
25049221, 2504923, 257E21583, 2041923, 2041921, 20419234, 20429804, 20429836, 427534, 118723 CB, 216 66
Abstract:
Embodiments of methods of modifying surface features on a workpiece with a gas cluster ion beam are generally described herein. Other embodiments may be described and claimed.

Global Information Architecture

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US Patent:
7647337, Jan 12, 2010
Filed:
Jun 30, 2006
Appl. No.:
11/428202
Inventors:
Frank Busalacchi - Aptos CA, US
David Tinsley - San Jose CA, US
Wesley Skinner - Tampa FL, US
Paul Bressler - Solana Beach CA, US
Eric Yarbrough - San Diego CA, US
International Classification:
G06F 7/00
G06F 17/00
G06F 9/44
G06F 9/45
US Classification:
707102, 707103 R, 7071041, 717124, 717137
Abstract:
The present invention provides a Global Information Architecture (GIA) to create an object-oriented, software-based modeling environment for the modeling of various data sources and allowing queries and transactions across those sources. The modeling environment is described in itself. Introspection is achieved since the model is described in the model, and early validation that the infrastructure is correct is established in that the infrastructure must execute against itself. Object traversal is done via vectors that describe how an object can be reached from other objects. Objects are linked by describing what type of object (data source) is to be reached and on the basis of what possible attribute values of that object. GIA allows different users to have different views of these data sources depending upon their WorldSpace. A user's view of the data source is controlled by his WorldSpace, which are the attributes he has that makes him unique.
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Wesley J Skinner from Andover, MA, age ~64 Get Report