Inventors:
Yum T. Chan - Newport Beach CA
Assignee:
Rockwell International Corporation - El Segundo CA
International Classification:
G11C 1140
G11C 1124
G11C 1928
Abstract:
A MNOS charge transfer device memory having permanent storage locations displaced laterally from the charge transfer channel is disclosed. The device structure controls charge spreading to prevent charge-to-be-transferred from reaching the portion of the charge transfer material underlying the permanent storage locations. Charges from the charge transfer channel are enabled to enter the charge transfer material underlying the permanent storage locations only when information is to be written into the permanent storage locations or read from the permanent storage locations.