Jonathan Toua Yang

20200088678, Mar 19, 2020

Aug 30, 2019

16/557458

- Oakland CA, US
You Seung Rim - Los Angeles CA, US
Jonathan Yang - Los Angeles CA, US

The Regents of the University of California - Oakland CA

G01N 27/414
C12Q 1/00
G01N 33/543
G01N 27/407
G01N 33/552
A61B 5/1468

Electrochemical and bio sensors using metal oxide semiconductors and method of making the same are described herein. The sensor includes a gate electrode, a dielectric layer over the gate electrode, a channel layer over the dielectric layer, and source and drain electrodes formed on the channel layer to provide a field effect transistor structure. The channel layer is a metal oxide semiconductor film that has a substantially uniform thickness of at least 3 nm thick and less than 10 nm thick. The metal oxide semiconductor film is functionalized with molecules attached thereto that are open to make contact with a fluid for detection of at least one component or at least one physical or chemical property of the fluid.

20180059051, Mar 1, 2018

Aug 29, 2017

15/689956

- Oakland CA, US
You Seung Rim - Los Angeles CA, US
Jonathan Yang - Los Angeles CA, US

The Regents of the University of California - Oakland CA

G01N 27/414
G01N 33/543
A61B 5/1468
G01N 33/552
G01N 27/407

Electrochemical and bio sensors using metal oxide semiconductors and method of making the same are described herein. The sensor includes a gate electrode, a dielectric layer over the gate electrode, a channel layer over the dielectric layer, and source and drain electrodes formed on the channel layer to provide a field effect transistor structure. The channel layer is a metal oxide semiconductor film that has a substantially uniform thickness of at least 3 nm thick and less than 10 nm thick. The metal oxide semiconductor film is functionalized with molecules attached thereto that are open to make contact with a fluid for detection of at least one component or at least one physical or chemical property of the fluid.