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Qiang Zou

from Fort Collins, CO
Age ~54
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Related to:
Tony ZouWei ZhangVicky Zhang
Connected to:
Billy Zou, 38Claudia ZouJiani Zou, 32Joy Zou, 27Keguan Zou, 40Lili Zou, 64Nancy Z Zou, 30Qiming Zou, 38Qiuzhen Zou, 50Shanshan Zou, 52

Qiang Zou Phones & Addresses

  • 3407 Pearstone Pl, Fort Collins, CO 80525 (970) 402-1371
  • Estes Park, CO
  • 109 Almansor St, Alhambra, CA 91801 (626) 282-2385
  • 1532 Prospect Ave, San Gabriel, CA 91776 (626) 282-2385
  • 1140 27Th St, Los Angeles, CA 90007 (213) 741-1914
  • 2727 Ellendale Pl, Los Angeles, CA 90007 (213) 741-1914 (323) 766-0896
  • Broomfield, CO
  • Honolulu, HI

Resumes

Resumes

Qiang Zou Photo 1

Expert R&D Engineer At Avago Technologies

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Position:
Expert R&D Engineer at Avago Technologies
Location:
Fort Collins, Colorado Area
Industry:
Semiconductors
Work:
Avago Technologies - Fort Collins, Colorado Area since Nov 2012
Expert R&D Engineer
Avago Technologies - Fort Collins, Colorado Area Sep 2007 - Oct 2012
Integration Engineer
Siimpel Corporation - Greater Los Angeles Area Sep 2006 - Sep 2007
Manager, New Product Introduction Group
Siimpel Corporation - Greater Los Angeles Area Aug 2005 - Sep 2006
MEMS Engineer
Education:
University of Southern California 2001 - 2005
PH.D, Electrical Engineering, Micro-Electro-Mechanical System, University of Hawaii at Manoa 1999 - 2001
Shanghai Jiao Tong University 1988 - 1995
Master, Electronic materials

Publications

Us Patents

Resonator Device Including Electrode With Buried Temperature Compensating Layer

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US Patent:
8436516, May 7, 2013
Filed:
Feb 24, 2012
Appl. No.:
13/404095
Inventors:
Richard C. Ruby - Menlo Park CA, US
Wei Pang - Fort Collins CO, US
Qiang Zou - Fort Collins CO, US
Donald Lee - Fort Collins CO, US
Assignee:
Avago Technologies General IP (Singapore) Pte. Ltd. - Singapore
International Classification:
H01L 41/08
US Classification:
310346, 310320, 310324
Abstract:
An acoustic resonator device includes a composite first electrode on a substrate, a piezoelectric layer on the composite electrode, and a second electrode on the piezoelectric layer. The first electrode includes a buried temperature compensating layer having a positive temperature coefficient. The piezoelectric layer has a negative temperature coefficient, and thus the positive temperature coefficient of the temperature compensating layer offsets at least a portion of the negative temperature coefficient of the piezoelectric layer.

Silicon Inertial Sensors Formed Using Mems

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US Patent:
7360422, Apr 22, 2008
Filed:
Sep 30, 2005
Appl. No.:
11/241869
Inventors:
Asad Madni - Los Angeles CA, US
Qiang Zou - Los Angeles CA, US
Eun Sok Kim - Rancho Palos Verdes CA, US
Lynn Costlow - Clayton CA, US
Jim Vuong - Northridge CA, US
Roger Wells - Yorba Linda CA, US
Assignee:
University of Southern California - Los Angeles CA
International Classification:
G01P 9/04
G01P 15/12
US Classification:
7350412, 7350416, 7351433
Abstract:
A MEMS silicon inertial sensor formed of a mass that is supported and constrained to vibrate in only specified ways. The sensors can be separately optimized from the support, to adjust the sensitivity separate from the bandwidth. The sensor can sense three dimensionally, or can only sense in a single plane. Vibration cancellation may be provided.

Silicon Inertial Sensors Formed Using Mems

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US Patent:
20070193353, Aug 23, 2007
Filed:
Sep 30, 2005
Appl. No.:
11/240804
Inventors:
Eun Kim - Rancho Palos Verdes CA, US
Qiang Zou - Alhambra CA, US
International Classification:
G01P 15/08
G01P 21/00
G01P 9/04
G01R 3/00
G01P 1/04
US Classification:
073514290, 073504120, 029593000, 029595000, 073001380
Abstract:
A MEMS silicon inertial sensor formed of a mass that is supported and constrained to vibrate in only specified ways. The sensors can be separately optimized from the support, to adjust the sensitivity separate from the bandwidth. The sensor can sense three dimensionally, or can only sense in a single plane.

Resonator Device Including Electrode With Buried Temperature Compensating Layer

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US Patent:
20110266925, Nov 3, 2011
Filed:
Apr 29, 2010
Appl. No.:
12/769791
Inventors:
Richard C. RUBY - Menlo Park CA, US
Wei PANG - Fort Collins CO, US
Qiang ZOU - Fort Collins CO, US
Donald LEE - Fort Collins CO, US
Assignee:
Avago Technologies Wireless IP (Singapore) Pte. Ltd. - Singapore
International Classification:
H01L 41/04
US Classification:
310346
Abstract:
An acoustic resonator device includes a composite first electrode on a substrate, a piezoelectric layer on the composite electrode, and a second electrode on the piezoelectric layer. The first electrode includes a buried temperature compensating layer having a positive temperature coefficient. The piezoelectric layer has a negative temperature coefficient, and thus the positive temperature coefficient of the temperature compensating layer offsets at least a portion of the negative temperature coefficient of the piezoelectric layer.

Resonator Device Including Electrode With Buried Temperature Compensating Layer

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US Patent:
20130015747, Jan 17, 2013
Filed:
Sep 21, 2012
Appl. No.:
13/624046
Inventors:
Avaro Technologies Wireless IP (Singapore) Pte. Ltd. - Singapore, SG
Wei PANG - Fort Collins CO, US
Qiang ZOU - Fort Collins CO, US
Donald LEE - Fort Collins CO, US
Assignee:
Avago Technologies Wireless IP (Singapore) Pte. Ltd. - Singapore
International Classification:
H01L 41/04
US Classification:
310346
Abstract:
An acoustic resonator device includes a composite first electrode on a substrate, a piezoelectric layer on the composite electrode, and a second electrode on the piezoelectric layer. The first electrode includes a buried temperature compensating layer having a positive temperature coefficient. The piezoelectric layer has a negative temperature coefficient, and thus the positive temperature coefficient of the temperature compensating layer offsets at least a portion of the negative temperature coefficient of the piezoelectric layer.

Resonator Device Including Electrodes With Buried Temperature Compensating Layers

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US Patent:
20130049545, Feb 28, 2013
Filed:
Aug 31, 2012
Appl. No.:
13/601384
Inventors:
Qiang ZOU - Fort Collins CO, US
Zhiqiang BI - Fort Collins CO, US
Kristina LAMERS - Fort Collins CO, US
Richard C. RUBY - Menlo Park CA, US
Assignee:
Avago Technologies General IP (Singapore) Pte. Ltd. - Singapore
International Classification:
H03H 9/17
US Classification:
310346
Abstract:
An acoustic resonator includes a substrate and a first composite electrode disposed over the substrate. The first composite electrode includes first and second electrically conductive layers and a first temperature compensating layer disposed between the first and second electrically conductive layers. The second electrically conductive layer forms a first electrical contact with the first electrically conductive layer on at least one side of the first temperature compensating layer, and the first electrical contact electrically shorts a first capacitive component of the first temperature compensating layer.

Acoustic Resonator Including Extended Cavity

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US Patent:
20180287584, Oct 4, 2018
Filed:
Mar 31, 2017
Appl. No.:
15/476797
Inventors:
- Singapore, SG
David A. Feld - Newark CA, US
Qiang Zou - Fort Collins CO, US
Andrew Barfknecht - Menlo Park CA, US
Mohamed Abd Allah - Sunnyvale CA, US
Jing Wu - San Jose CA, US
Zongliang Cao - San Jose CA, US
Guiti Zolfagharkhani - San Jose CA, US
International Classification:
H03H 9/17
H01L 41/08
H01L 41/047
H03H 9/54
Abstract:
A BAW resonator includes a nonlinear substrate defining a cavity, and an acoustic stack over the cavity, including a bottom electrode, a piezoelectric layer, and a top electrode, where an active region of the acoustic stack includes overlapping portions of the cavity, the bottom electrode, the piezoelectric layer and the top electrode. The BAW resonator further includes a connecting strip extending from a portion of the top electrode for providing electrical excitation of the acoustic stack, where an E-field generated in the BAW resonator begins at the top electrode and terminates at the bottom electrode in response to the electrical excitation. The cavity includes an inner portion in the active region and an extended portion extending from an outer perimeter of the active region underneath the connecting strip. A length of the extended portion are sufficient to substantially prevent portions of the E-field from passing through the substrate.

Bulk Acoustic Resonator Device Including Temperature Compensation Structure Comprising Low Acoustic Impedance Layer

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US Patent:
20160118957, Apr 28, 2016
Filed:
Oct 22, 2014
Appl. No.:
14/521406
Inventors:
- Singapore, SG
Qiang Zou - Fort Collins CO, US
Genichi Tsuzuki - San Jose CA, US
International Classification:
H03H 9/54
H01L 41/047
Abstract:
An acoustic resonator device includes a temperature compensation structure disposed beneath the first electrode and above the substrate.
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Qiang Zou from Fort Collins, CO, age ~54 Get Report