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Teruko K Inouye

from Half Moon Bay, CA
Deceased
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Also known as:
Teryko K Inouye, K Inouye
Phone and address:
8 Greenbrier Ct, Princeton By The Sea, CA 94019
Related to:
Gordon Gwo-Cheng Liu, 79Jason Inouye, 36Nolan Inouye, 31Diksha Inouye, 41Owen Inouye, 28Kitty Inouye
Connected to:
Margaret C Inouye, 66Allan P Inovejas, 61Carolyn D Insalaco, 76Joanne C Insalaco, 67Linda B Insalaco, 64Matt Insalaco, 130Michael Insalaco, 65Gary M Insana, 67Gregory M Insana, 35Johnna M Insana, 44

Teruko Inouye Phones & Addresses

  • 8 Greenbrier Ct, Half Moon Bay, CA 94019
  • Fremont, CA
  • Palo Alto, CA
  • Santa Clara, CA

Work

Position: Executive, Administrative, and Managerial Occupations

Education

Degree: Bachelor's degree or higher

Publications

Us Patents

Means And Method For A Self-Aligned Multilayer Laser Epitaxy Structure Device

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US Patent:
46234276, Nov 18, 1986
Filed:
Aug 12, 1983
Appl. No.:
6/522918
Inventors:
Donald E. Ackley - Lambertville NJ
Reinhart W. H. Engelmann - Mountain View CA
Teruko K. Inouye - Palo Alto CA
Assignee:
Hewlett-Packard Company - Palo Alto CA
International Classification:
H01L 2120
H01L 21306
H01S 319
US Classification:
156647
Abstract:
A method of forming the proper metallization contacts in a multilayer epitaxy laser device is provided. By selecting the proper crystal plane orientation in etching nonplanar features like channels for the device, a differential etch rate in a free-etch can be effected to remove only selected portions of the top layer and to provide self-alignment in the metallization process.

Means For A Self-Aligned Multilayer Laser Epitaxy Structure Device

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US Patent:
46655255, May 12, 1987
Filed:
May 16, 1986
Appl. No.:
6/863919
Inventors:
Donald E. Ackley - Lambertville NJ
Reinhart W. H. Engelmann - Mountain View CA
Teruko K. Inouye - Palo Alto CA
Assignee:
Hewlett-Packard Company - Palo Alto CA
International Classification:
H01S 319
H01L 3300
H01L 2100
US Classification:
372 46
Abstract:
A method of forming the proper metallization contacts in a multilayer epitaxy laser device is provided. By selecting the proper crystal plane orientation in etching nonplanar features like channels for the device, a differential etch rate in a free-etch can be effected to remove only selected portions of the top layer and to provide self-alignment in the metallization process.
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Teruko K Inouye from Half Moon Bay, CADeceased Get Report