Inventors:
Donald E. Ackley - Lambertville NJ
Reinhart W. H. Engelmann - Mountain View CA
Teruko K. Inouye - Palo Alto CA
Assignee:
Hewlett-Packard Company - Palo Alto CA
International Classification:
H01L 2120
H01L 21306
H01S 319
Abstract:
A method of forming the proper metallization contacts in a multilayer epitaxy laser device is provided. By selecting the proper crystal plane orientation in etching nonplanar features like channels for the device, a differential etch rate in a free-etch can be effected to remove only selected portions of the top layer and to provide self-alignment in the metallization process.